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cd2a0045 | 1 | /************************************************************************** |
2 | * Copyright(c) 2007-2009, ALICE Experiment at CERN, All rights reserved. * | |
3 | * * | |
4 | * Author: The ALICE Off-line Project. * | |
5 | * Contributors are mentioned in the code where appropriate. * | |
6 | * * | |
7 | * Permission to use, copy, modify and distribute this software and its * | |
8 | * documentation strictly for non-commercial purposes is hereby granted * | |
9 | * without fee, provided that the above copyright notice appears in all * | |
10 | * copies and that both the copyright notice and this permission notice * | |
11 | * appear in the supporting documentation. The authors make no claims * | |
12 | * about the suitability of this software for any purpose. It is * | |
13 | * provided "as is" without express or implied warranty. * | |
14 | **************************************************************************/ | |
15 | ||
2ae37d58 | 16 | /* $Id$ */ |
cd2a0045 | 17 | |
18 | /////////////////////////////////////////////////////////////////// | |
19 | // // | |
20 | // Implementation of the class to store the parameters used in // | |
21 | // the simulation of SPD, SDD and SSD detectors // | |
22 | // Origin: F.Prino, Torino, prino@to.infn.it // | |
23 | // // | |
24 | /////////////////////////////////////////////////////////////////// | |
25 | ||
26 | #include "AliITSSimuParam.h" | |
27 | #include <TMath.h> | |
28 | ||
29 | const Float_t AliITSSimuParam::fgkSPDBiasVoltageDefault = 18.182; | |
30 | const Double_t AliITSSimuParam::fgkSPDThreshDefault = 3000.; | |
31 | const Double_t AliITSSimuParam::fgkSPDSigmaDefault = 250.; | |
32 | const TString AliITSSimuParam::fgkSPDCouplingOptDefault = "old"; | |
33 | const Double_t AliITSSimuParam::fgkSPDCouplColDefault = 0.; | |
34 | const Double_t AliITSSimuParam::fgkSPDCouplRowDefault = 0.055; | |
35 | const Float_t AliITSSimuParam::fgkSPDEccDiffDefault = 0.85; | |
36 | const Float_t AliITSSimuParam::fgkSDDDiffCoeffDefault = 3.23; | |
37 | const Float_t AliITSSimuParam::fgkSDDDiffCoeff1Default = 30.; | |
38 | const Float_t AliITSSimuParam::fgkSDDJitterErrorDefault = 20.; // 20 um from beam test 2001 | |
aebba721 | 39 | const Float_t AliITSSimuParam::fgkSDDDynamicRangeDefault = 1400./2.5; // mV/MOhm = nA |
cd2a0045 | 40 | const Int_t AliITSSimuParam::fgkSDDMaxAdcDefault = 1024; |
41 | const Float_t AliITSSimuParam::fgkSDDChargeLossDefault = 0.; | |
42 | const Double_t AliITSSimuParam::fgkSSDCouplingPRDefault = 0.01; | |
43 | const Double_t AliITSSimuParam::fgkSSDCouplingPLDefault = 0.01; | |
44 | const Double_t AliITSSimuParam::fgkSSDCouplingNRDefault = 0.01; | |
45 | const Double_t AliITSSimuParam::fgkSSDCouplingNLDefault = 0.01; | |
46 | const Int_t AliITSSimuParam::fgkSSDZSThresholdDefault = 3; | |
47 | ||
48 | const Float_t AliITSSimuParam::fgkNsigmasDefault = 3.; | |
49 | const Int_t AliITSSimuParam::fgkNcompsDefault = 121; | |
50 | ||
51 | ClassImp(AliITSSimuParam) | |
52 | ||
53 | //______________________________________________________________________ | |
54 | AliITSSimuParam::AliITSSimuParam(): | |
55 | TObject(), | |
56 | fGeVcharge(0.), | |
57 | fDOverV(0.), | |
2ae37d58 | 58 | //fSPDBiasVoltage(fgkSPDBiasVoltageDefault), |
59 | //fSPDThresh(fgkSPDThreshDefault), | |
60 | //fSPDSigma(fgkSPDSigmaDefault), | |
cd2a0045 | 61 | fSPDCouplOpt(0), |
62 | fSPDCouplCol(fgkSPDCouplColDefault), | |
63 | fSPDCouplRow(fgkSPDCouplRowDefault), | |
64 | fSPDEccDiff(0.), | |
dba117de | 65 | fSPDAddNoisyFlag(kFALSE), |
66 | fSPDRemoveDeadFlag(kFALSE), | |
cd2a0045 | 67 | fSDDElectronics(0), |
68 | fSDDDiffCoeff(0.), | |
69 | fSDDDiffCoeff1(0.), | |
70 | fSDDJitterError(fgkSDDJitterErrorDefault), | |
71 | fSDDDynamicRange(fgkSDDDynamicRangeDefault), | |
72 | fSDDMaxAdc(0.), | |
73 | fSDDChargeLoss(fgkSDDChargeLossDefault), | |
d9ed1779 | 74 | fSDDRawFormat(7), |
cd2a0045 | 75 | fSSDCouplingPR(0), |
76 | fSSDCouplingPL(0), | |
77 | fSSDCouplingNR(0), | |
78 | fSSDCouplingNL(0), | |
79 | fSSDZSThreshold(fgkSSDZSThresholdDefault), | |
80 | fNsigmas(fgkNsigmasDefault), | |
81 | fNcomps(fgkNcompsDefault), | |
2ae37d58 | 82 | fGaus(), |
83 | fN(0.), | |
84 | fT(300.) | |
cd2a0045 | 85 | { |
86 | // default constructor | |
2ae37d58 | 87 | SetSPDBiasVoltageAll(fgkSPDBiasVoltageDefault); |
88 | SetSPDThresholdsAll(fgkSPDThreshDefault,fgkSPDSigmaDefault); | |
89 | SetSPDNoiseAll(0,0); | |
cd2a0045 | 90 | SetGeVToCharge(); |
91 | SetDistanceOverVoltage(); | |
92 | SetSPDCouplingOption(fgkSPDCouplingOptDefault); | |
93 | SetSPDSigmaDiffusionAsymmetry(fgkSPDEccDiffDefault); | |
94 | SetSDDElectronics(); | |
95 | SetSDDDiffCoeff(fgkSDDDiffCoeffDefault,fgkSDDDiffCoeff1Default); | |
96 | SetSDDMaxAdc((Double_t)fgkSDDMaxAdcDefault); | |
cd2a0045 | 97 | SetSSDCouplings(fgkSSDCouplingPRDefault,fgkSSDCouplingPLDefault,fgkSSDCouplingNRDefault,fgkSSDCouplingNLDefault); |
98 | } | |
99 | //______________________________________________________________________ | |
100 | AliITSSimuParam::AliITSSimuParam(const AliITSSimuParam &simpar): | |
101 | TObject(), | |
102 | fGeVcharge(simpar.fGeVcharge), | |
103 | fDOverV(simpar.fDOverV), | |
2ae37d58 | 104 | //fSPDBiasVoltage(simpar.fSPDBiasVoltage), |
105 | //fSPDThresh(simpar.fSPDThresh), | |
106 | //fSPDSigma(simpar.fSPDSigma), | |
cd2a0045 | 107 | fSPDCouplOpt(simpar.fSPDCouplOpt), |
108 | fSPDCouplCol(simpar.fSPDCouplCol), | |
109 | fSPDCouplRow(simpar.fSPDCouplRow), | |
110 | fSPDEccDiff(simpar.fSPDEccDiff), | |
dba117de | 111 | fSPDAddNoisyFlag(simpar.fSPDAddNoisyFlag), |
112 | fSPDRemoveDeadFlag(simpar.fSPDRemoveDeadFlag), | |
cd2a0045 | 113 | fSDDElectronics(simpar.fSDDElectronics), |
114 | fSDDDiffCoeff(simpar.fSDDDiffCoeff), | |
115 | fSDDDiffCoeff1(simpar.fSDDDiffCoeff1), | |
116 | fSDDJitterError(simpar.fSDDJitterError), | |
117 | fSDDDynamicRange(simpar.fSDDDynamicRange), | |
118 | fSDDMaxAdc(simpar.fSDDMaxAdc), | |
119 | fSDDChargeLoss(simpar.fSDDChargeLoss), | |
d9ed1779 | 120 | fSDDRawFormat(simpar.fSDDRawFormat), |
cd2a0045 | 121 | fSSDCouplingPR(simpar.fSSDCouplingPR), |
122 | fSSDCouplingPL(simpar.fSSDCouplingPL), | |
123 | fSSDCouplingNR(simpar.fSSDCouplingNR), | |
124 | fSSDCouplingNL(simpar.fSSDCouplingNL), | |
125 | fSSDZSThreshold(simpar.fSSDZSThreshold), | |
126 | fNsigmas(simpar.fNsigmas), | |
127 | fNcomps(simpar.fNcomps), | |
2ae37d58 | 128 | fGaus(), |
129 | fN(simpar.fN), | |
130 | fT(simpar.fT){ | |
cd2a0045 | 131 | // copy constructor |
2ae37d58 | 132 | for (Int_t i=0;i<240;i++) { |
133 | fSPDBiasVoltage[i]=simpar.fSPDBiasVoltage[i]; | |
134 | fSPDThresh[i]=simpar.fSPDThresh[i]; | |
135 | fSPDSigma[i]=simpar.fSPDSigma[i]; | |
136 | fSPDNoise[i]=simpar.fSPDNoise[i]; | |
137 | fSPDBaseline[i]=simpar.fSPDBaseline[i]; | |
138 | } | |
cd2a0045 | 139 | } |
140 | ||
141 | //______________________________________________________________________ | |
142 | AliITSSimuParam& AliITSSimuParam::operator=(const AliITSSimuParam& source){ | |
143 | // Assignment operator. | |
144 | this->~AliITSSimuParam(); | |
145 | new(this) AliITSSimuParam(source); | |
146 | return *this; | |
147 | ||
148 | } | |
149 | ||
150 | ||
151 | //______________________________________________________________________ | |
152 | AliITSSimuParam::~AliITSSimuParam() { | |
153 | // destructor | |
154 | if(fGaus) delete fGaus; | |
155 | } | |
156 | //________________________________________________________________________ | |
157 | void AliITSSimuParam::SetNLookUp(Int_t p1){ | |
158 | // Set number of sigmas over which cluster disintegration is performed | |
159 | fNcomps=p1; | |
160 | if (fGaus) delete fGaus; | |
161 | fGaus = new TArrayF(fNcomps+1); | |
162 | for(Int_t i=0; i<=fNcomps; i++) { | |
163 | Float_t x = -fNsigmas + (2.*i*fNsigmas)/(fNcomps-1); | |
164 | (*fGaus)[i] = exp(-((x*x)/2)); | |
165 | } | |
166 | } | |
167 | //________________________________________________________________________ | |
168 | void AliITSSimuParam::PrintParameters() const{ | |
169 | printf("GeVToCharge = %G\n",fGeVcharge); | |
170 | printf("DistanveOverVoltage = %f \n",fDOverV); | |
171 | printf("\n"); | |
172 | printf("===== SPD parameters =====\n"); | |
2ae37d58 | 173 | printf("Bias Voltage = %f \n",fSPDBiasVoltage[0]); |
174 | printf("Threshold and sigma = %f %f\n",fSPDThresh[0],fSPDSigma[0]); | |
cd2a0045 | 175 | printf("Coupling Option = %s\n",fSPDCouplOpt.Data()); |
176 | printf("Coupling value (column) = %f\n",fSPDCouplCol); | |
177 | printf("Coupling value (row) = %f\n",fSPDCouplRow); | |
178 | printf("Eccentricity in diffusion = %f\n",fSPDEccDiff); | |
d600da26 | 179 | printf("Flag to add noisy = %d\n",fSPDAddNoisyFlag); |
180 | printf("Flag to remove dead = %d\n",fSPDRemoveDeadFlag); | |
cd2a0045 | 181 | printf("\n"); |
182 | printf("===== SDD parameters =====\n"); | |
183 | printf("Electronic chips = %d\n",fSDDElectronics); | |
184 | printf("Diffusion Coefficients = %f %f\n",fSDDDiffCoeff,fSDDDiffCoeff1); | |
185 | printf("Jitter Error = %f um\n",fSDDJitterError); | |
186 | printf("Dynamic Range = %f\n",fSDDDynamicRange); | |
187 | printf("Max. ADC = %f\n",fSDDMaxAdc); | |
188 | printf("Charge Loss = %f\n",fSDDChargeLoss); | |
d9ed1779 | 189 | printf("Raw Data Format = %d\n",fSDDRawFormat); |
cd2a0045 | 190 | printf("\n"); |
191 | printf("===== SSD parameters =====\n"); | |
cd2a0045 | 192 | printf("Coupling PR = %f\n",fSSDCouplingPR); |
193 | printf("Coupling PL = %f\n",fSSDCouplingPL); | |
194 | printf("Coupling NR = %f\n",fSSDCouplingNR); | |
195 | printf("Coupling NL = %f\n",fSSDCouplingNL); | |
196 | printf("Zero Supp threshold = %d\n",fSSDZSThreshold); | |
197 | } | |
2ae37d58 | 198 | //______________________________________________________________________ |
199 | Double_t AliITSSimuParam::MobilityElectronSiEmp() const { | |
200 | // Computes the electron mobility in cm^2/volt-sec. Taken from SILVACO | |
201 | // International ATLAS II, 2D Device Simulation Framework, User Manual | |
202 | // Chapter 5 Equation 5-6. An empirical function for low-field mobiliity | |
203 | // in silicon at different tempeatures. | |
204 | // Inputs: | |
205 | // none. | |
206 | // Output: | |
207 | // none. | |
208 | // Return: | |
209 | // The Mobility of electrons in Si at a give temprature and impurity | |
210 | // concentration. [cm^2/Volt-sec] | |
211 | const Double_t km0 = 55.24; // cm^2/Volt-sec | |
212 | const Double_t km1 = 7.12E+08; // cm^2 (degree K)^2.3 / Volt-sec | |
213 | const Double_t kN0 = 1.072E17; // #/cm^3 | |
214 | const Double_t kT0 = 300.; // degree K. | |
215 | const Double_t keT0 = -2.3; // Power of Temp. | |
216 | const Double_t keT1 = -3.8; // Power of Temp. | |
217 | const Double_t keN = 0.73; // Power of Dopent Consentrations | |
218 | Double_t m; | |
219 | Double_t tT = fT,nN = fN; | |
220 | ||
221 | if(nN<=0.0){ // Simple case. | |
222 | if(tT==300.) return 1350.0; // From Table 5-1 at consentration 1.0E14. | |
223 | m = km1*TMath::Power(tT,keT0); | |
224 | return m; | |
225 | } // if nN<=0.0 | |
226 | m = km1*TMath::Power(tT,keT0) - km0; | |
227 | m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN); | |
228 | m += km0; | |
229 | return m; | |
230 | } | |
231 | //______________________________________________________________________ | |
232 | Double_t AliITSSimuParam::MobilityHoleSiEmp() const { | |
233 | // Computes the Hole mobility in cm^2/volt-sec. Taken from SILVACO | |
234 | // International ATLAS II, 2D Device Simulation Framework, User Manual | |
235 | // Chapter 5 Equation 5-7 An empirical function for low-field mobiliity | |
236 | // in silicon at different tempeatures. | |
237 | // Inputs: | |
238 | // none. | |
239 | // Output: | |
240 | // none. | |
241 | // Return: | |
242 | // The Mobility of Hole in Si at a give temprature and impurity | |
243 | // concentration. [cm^2/Volt-sec] | |
244 | const Double_t km0a = 49.74; // cm^2/Volt-sec | |
245 | const Double_t km0b = 49.70; // cm^2/Volt-sec | |
246 | const Double_t km1 = 1.35E+08; // cm^2 (degree K)^2.3 / Volt-sec | |
247 | const Double_t kN0 = 1.606E17; // #/cm^3 | |
248 | const Double_t kT0 = 300.; // degree K. | |
249 | const Double_t keT0 = -2.2; // Power of Temp. | |
250 | const Double_t keT1 = -3.7; // Power of Temp. | |
251 | const Double_t keN = 0.70; // Power of Dopent Consentrations | |
252 | Double_t m; | |
253 | Double_t tT = fT,nN = fN; | |
254 | ||
255 | if(nN<=0.0){ // Simple case. | |
256 | if(tT==300.) return 495.0; // From Table 5-1 at consentration 1.0E14. | |
257 | m = km1*TMath::Power(tT,keT0) + km0a-km0b; | |
258 | return m; | |
259 | } // if nN<=0.0 | |
260 | m = km1*TMath::Power(tT,keT0) - km0b; | |
261 | m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN); | |
262 | m += km0a; | |
263 | return m; | |
264 | } | |
265 | //______________________________________________________________________ | |
266 | Double_t AliITSSimuParam::DiffusionCoefficientElectron() const { | |
267 | // Computes the Diffusion coefficient for electrons in cm^2/sec. Taken | |
268 | // from SILVACO International ATLAS II, 2D Device Simulation Framework, | |
269 | // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion | |
270 | // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec. | |
271 | // Inputs: | |
272 | // none. | |
273 | // Output: | |
274 | // none. | |
275 | // Return: | |
276 | // The Diffusion Coefficient of electrons in Si at a give temprature | |
277 | // and impurity concentration. [cm^2/sec] | |
278 | // const Double_t kb = 1.3806503E-23; // Joules/degree K | |
279 | // const Double_t qe = 1.60217646E-19; // Coulumbs. | |
280 | const Double_t kbqe = 8.617342312E-5; // Volt/degree K | |
281 | Double_t m = MobilityElectronSiEmp(); | |
282 | Double_t tT = fT; | |
283 | ||
284 | return m*kbqe*tT; // [cm^2/sec] | |
285 | } | |
286 | //______________________________________________________________________ | |
287 | Double_t AliITSSimuParam::DiffusionCoefficientHole() const { | |
288 | // Computes the Diffusion coefficient for Holes in cm^2/sec. Taken | |
289 | // from SILVACO International ATLAS II, 2D Device Simulation Framework, | |
290 | // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion | |
291 | // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec. | |
292 | // Inputs: | |
293 | // none. | |
294 | // Output: | |
295 | // none. | |
296 | // Return: | |
297 | // The Defusion Coefficient of Hole in Si at a give temprature and | |
298 | // impurity concentration. [cm^2/sec] | |
299 | // and impurity concentration. [cm^2/sec] | |
300 | // const Double_t kb = 1.3806503E-23; // Joules/degree K | |
301 | // const Double_t qe = 1.60217646E-19; // Coulumbs. | |
302 | const Double_t kbqe = 8.617342312E-5; // Volt/degree K | |
303 | Double_t m = MobilityHoleSiEmp(); | |
304 | Double_t tT = fT; | |
305 | ||
306 | return m*kbqe*tT; // [cm^2/sec] | |
307 | } | |
308 | //______________________________________________________________________ | |
309 | Double_t AliITSSimuParam::LorentzAngleHole(Double_t B) const { | |
310 | // Computes the Lorentz angle for electrons in Si | |
311 | // Input: magnetic Field in KGauss | |
312 | // Output: Lorentz angle in radians (positive if Bz is positive) | |
313 | // Main Reference: NIM A 497 (2003) 389–396. | |
314 | // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al. | |
315 | // | |
316 | const Double_t krH=0.70; // Hall scattering factor for Hole | |
317 | const Double_t kT0 = 300.; // reference Temperature (degree K). | |
318 | const Double_t kmulow0 = 470.5; // cm^2/Volt-sec | |
319 | const Double_t keT0 = -2.5; // Power of Temp. | |
320 | const Double_t beta0 = 1.213; // beta coeff. at T0=300K | |
321 | const Double_t keT1 = 0.17; // Power of Temp. for beta | |
322 | const Double_t kvsat0 = 8.37E+06; // saturated velocity at T0=300K (cm/sec) | |
323 | const Double_t keT2 = 0.52; // Power of Temp. for vsat | |
324 | Double_t tT = fT; | |
325 | Double_t eE= 1./fDOverV; | |
326 | Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0); | |
327 | Double_t beta=beta0*TMath::Power(tT/kT0,keT1); | |
328 | Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2); | |
329 | Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta); | |
330 | Double_t angle=TMath::ATan(krH*mu*B*1.E-05); // Conversion Factor | |
331 | return angle; | |
332 | } | |
333 | //______________________________________________________________________ | |
334 | Double_t AliITSSimuParam::LorentzAngleElectron(Double_t B) const { | |
335 | // Computes the Lorentz angle for electrons in Si | |
336 | // Input: magnetic Field in KGauss | |
337 | // Output: Lorentz angle in radians (positive if Bz is positive) | |
338 | // Main Reference: NIM A 497 (2003) 389–396. | |
339 | // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al. | |
340 | // | |
341 | const Double_t krH=1.15; // Hall scattering factor for Electron | |
342 | const Double_t kT0 = 300.; // reference Temperature (degree K). | |
343 | const Double_t kmulow0 = 1417.0; // cm^2/Volt-sec | |
344 | const Double_t keT0 = -2.2; // Power of Temp. | |
345 | const Double_t beta0 = 1.109; // beta coeff. at T0=300K | |
346 | const Double_t keT1 = 0.66; // Power of Temp. for beta | |
347 | const Double_t kvsat0 = 1.07E+07; // saturated velocity at T0=300K (cm/sec) | |
348 | const Double_t keT2 = 0.87; // Power of Temp. for vsat | |
349 | Double_t tT = fT; | |
350 | Double_t eE= 1./fDOverV; | |
351 | Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0); | |
352 | Double_t beta=beta0*TMath::Power(tT/kT0,keT1); | |
353 | Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2); | |
354 | Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta); | |
355 | Double_t angle=TMath::ATan(krH*mu*B*1.E-05); | |
356 | return angle; | |
357 | } | |
358 | //______________________________________________________________________ | |
359 | Double_t AliITSSimuParam::SpeedElectron() const { | |
360 | // Computes the average speed for electrons in Si under the low-field | |
361 | // approximation. [cm/sec]. | |
362 | // Inputs: | |
363 | // none. | |
364 | // Output: | |
365 | // none. | |
366 | // Return: | |
367 | // The speed the holes are traveling at due to the low field applied. | |
368 | // [cm/sec] | |
369 | Double_t m = MobilityElectronSiEmp(); | |
370 | ||
371 | return m/fDOverV; // [cm/sec] | |
372 | } | |
373 | //______________________________________________________________________ | |
374 | Double_t AliITSSimuParam::SpeedHole() const { | |
375 | // Computes the average speed for Holes in Si under the low-field | |
376 | // approximation.[cm/sec]. | |
377 | // Inputs: | |
378 | // none. | |
379 | // Output: | |
380 | // none. | |
381 | // Return: | |
382 | // The speed the holes are traveling at due to the low field applied. | |
383 | // [cm/sec] | |
384 | Double_t m = MobilityHoleSiEmp(); | |
385 | ||
386 | return m/fDOverV; // [cm/sec] | |
387 | } | |
388 | //______________________________________________________________________ | |
389 | Double_t AliITSSimuParam::SigmaDiffusion3D(Double_t l) const { | |
390 | // Returns the Gaussian sigma^2 == <x^2+y^2+z^2> [cm^2] due to the | |
391 | // defusion of electrons or holes through a distance l [cm] caused | |
392 | // by an applied voltage v [volt] through a distance d [cm] in any | |
393 | // material at a temperature T [degree K]. The sigma diffusion when | |
394 | // expressed in terms of the distance over which the diffusion | |
395 | // occures, l=time/speed, is independent of the mobility and therefore | |
396 | // the properties of the material. The charge distributions is given by | |
397 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 6Dt where D=mkT/e | |
398 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric | |
399 | // charge. and vel=m*v/d. consiquently sigma^2=6kTdl/ev. | |
400 | // Inputs: | |
401 | // Double_t l Distance the charge has to travel. | |
402 | // Output: | |
403 | // none. | |
404 | // Return: | |
405 | // The Sigma due to the diffution of electrons. [cm] | |
406 | const Double_t kcon = 5.17040258E-04; // == 6k/e [J/col or volts] | |
407 | ||
408 | return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm] | |
409 | } | |
410 | //______________________________________________________________________ | |
411 | Double_t AliITSSimuParam::SigmaDiffusion2D(Double_t l) const { | |
412 | // Returns the Gaussian sigma^2 == <x^2+z^2> [cm^2] due to the defusion | |
413 | // of electrons or holes through a distance l [cm] caused by an applied | |
414 | // voltage v [volt] through a distance d [cm] in any material at a | |
415 | // temperature T [degree K]. The sigma diffusion when expressed in terms | |
416 | // of the distance over which the diffusion occures, l=time/speed, is | |
417 | // independent of the mobility and therefore the properties of the | |
418 | // material. The charge distributions is given by | |
419 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <x^2+z^2> = 4Dt where D=mkT/e | |
420 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric | |
421 | // charge. and vel=m*v/d. consiquently sigma^2=4kTdl/ev. | |
422 | // Inputs: | |
423 | // Double_t l Distance the charge has to travel. | |
424 | // Output: | |
425 | // none. | |
426 | // Return: | |
427 | // The Sigma due to the diffution of electrons. [cm] | |
428 | const Double_t kcon = 3.446935053E-04; // == 4k/e [J/col or volts] | |
429 | ||
430 | return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm] | |
431 | } | |
432 | //______________________________________________________________________ | |
433 | Double_t AliITSSimuParam::SigmaDiffusion1D(Double_t l) const { | |
434 | // Returns the Gaussian sigma^2 == <x^2> [cm^2] due to the defusion | |
435 | // of electrons or holes through a distance l [cm] caused by an applied | |
436 | // voltage v [volt] through a distance d [cm] in any material at a | |
437 | // temperature T [degree K]. The sigma diffusion when expressed in terms | |
438 | // of the distance over which the diffusion occures, l=time/speed, is | |
439 | // independent of the mobility and therefore the properties of the | |
440 | // material. The charge distributions is given by | |
441 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 2Dt where D=mkT/e | |
442 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric | |
443 | // charge. and vel=m*v/d. consiquently sigma^2=2kTdl/ev. | |
444 | // Inputs: | |
445 | // Double_t l Distance the charge has to travel. | |
446 | // Output: | |
447 | // none. | |
448 | // Return: | |
449 | // The Sigma due to the diffution of electrons. [cm] | |
450 | const Double_t kcon = 1.723467527E-04; // == 2k/e [J/col or volts] | |
451 | ||
452 | return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm] | |
453 | } | |
454 | //---------------------------------------------------------------------- | |
455 | Double_t AliITSSimuParam::DepletedRegionThicknessA(Double_t dopCons, | |
456 | Double_t voltage, | |
457 | Double_t elecCharge, | |
458 | Double_t voltBuiltIn)const{ | |
459 | // Computes the thickness of the depleted region in Si due to the | |
460 | // application of an external bias voltage. From the Particle Data | |
461 | // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004) | |
462 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 | |
463 | // July 15 2004, ISSN 0370-2693 page 263. First equation. | |
464 | // Inputs: | |
465 | // Double_t dopCons "N" doping concentration | |
466 | // Double_t voltage "V" external bias voltage | |
467 | // Double_t elecCharge "e" electronic charge | |
468 | // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for | |
469 | // resistivities typically used in detectors) | |
470 | // Output: | |
471 | // none. | |
472 | // Return: | |
473 | // The thickness of the depleted region | |
474 | ||
475 | return TMath::Sqrt(2.0*(voltage+voltBuiltIn)/(dopCons*elecCharge)); | |
476 | } | |
477 | //---------------------------------------------------------------------- | |
478 | Double_t AliITSSimuParam::DepletedRegionThicknessB(Double_t resist, | |
479 | Double_t voltage, | |
480 | Double_t mobility, | |
481 | Double_t voltBuiltIn, | |
482 | Double_t dielConst)const{ | |
483 | // Computes the thickness of the depleted region in Si due to the | |
484 | // application of an external bias voltage. From the Particle Data | |
485 | // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004) | |
486 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 | |
487 | // July 15 2004, ISSN 0370-2693 page 263. Second Equation. | |
488 | // Inputs: | |
489 | // Double_t resist "rho" resistivity (typically 1-10 kOhm cm) | |
490 | // Double_t voltage "V" external bias voltage | |
491 | // Double_t mobility "mu" charge carrier mobility | |
492 | // (electons 1350, holes 450 cm^2/V/s) | |
493 | // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for | |
494 | // resistivities typically used in detectors) | |
495 | // Double_t dielConst=1.E-12 "epsilon" dielectric constant = 11.9 * | |
496 | // (permittivity of free space) or ~ 1 pF/cm | |
497 | // Output: | |
498 | // none. | |
499 | // Return: | |
500 | // The thickness of the depleted region | |
501 | ||
502 | return TMath::Sqrt(2.8*resist*mobility*dielConst*(voltage+voltBuiltIn)); | |
503 | } | |
504 | //---------------------------------------------------------------------- | |
505 | Double_t AliITSSimuParam::ReverseBiasCurrent(Double_t temp, | |
506 | Double_t revBiasCurT1, | |
507 | Double_t tempT1, | |
508 | Double_t energy)const{ | |
509 | // Computes the temperature dependance of the reverse bias current | |
510 | // of Si detectors. From the Particle Data | |
511 | // Book, 28.8 Silicon semiconductor detectors equation 28.21 (2004) | |
512 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 | |
513 | // July 15 2004, ISSN 0370-2693 page 263. | |
514 | // Inputs: | |
515 | // Double_t temp The temperature at which the current is wanted | |
516 | // Double_t revBiasCurT1 The reference bias current at temp T1 | |
517 | // Double_t tempT1 The temperature correstponding to revBiasCurT1 | |
518 | // Double_t energy=1.2 Some energy [eV] | |
519 | // Output: | |
520 | // none. | |
521 | // Return: | |
522 | // The reverse bias current at the tempeature temp. | |
523 | const Double_t kBoltz = 8.617343E-5; //[eV/K] | |
524 | ||
525 | return revBiasCurT1*(temp*temp/(tempT1*tempT1))* | |
526 | TMath::Exp(-0.5*energy*(tempT1-temp)/(kBoltz*tempT1*temp)); | |
527 | } | |
528 | //______________________________________________________________________ | |
529 | void AliITSSimuParam::SPDThresholds(const Int_t mod, Double_t& thresh, Double_t& sigma) const { | |
530 | if(mod<0 || mod>239) { | |
531 | thresh=0; | |
532 | sigma=0; | |
533 | return; | |
534 | } | |
535 | thresh=fSPDThresh[mod]; | |
536 | sigma=fSPDSigma[mod]; | |
537 | return; | |
538 | } | |
539 | //_______________________________________________________________________ | |
540 | void AliITSSimuParam::SPDNoise(const Int_t mod,Double_t &noise, Double_t &baseline) const { | |
541 | if(mod<0 || mod>239) { | |
542 | noise=0; | |
543 | baseline=0; | |
544 | return; | |
545 | } | |
546 | noise=fSPDNoise[mod]; | |
547 | baseline=fSPDBaseline[mod]; | |
548 | return; | |
549 | } | |
550 |