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5f20d3fb | 1 | /************************************************************************** |
2 | * Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. * | |
3 | * * | |
4 | * Author: The ALICE Off-line Project. * | |
5 | * Contributors are mentioned in the code where appropriate. * | |
6 | * * | |
7 | * Permission to use, copy, modify and distribute this software and its * | |
8 | * documentation strictly for non-commercial purposes is hereby granted * | |
9 | * without fee, provided that the above copyright notice appears in all * | |
10 | * copies and that both the copyright notice and this permission notice * | |
11 | * appear in the supporting documentation. The authors make no claims * | |
12 | * about the suitability of this software for any purpose. It is * | |
13 | * provided "as is" without express or implied warranty. * | |
14 | **************************************************************************/ | |
15 | ||
16 | /* $Id$ */ | |
17 | ||
18 | //_________________________________________________________________________ | |
19 | // Implementation version v0 of PHOS Manager class | |
20 | // Layout EMC + PPSD has name GPS2 | |
21 | // The main goal of this version of AliPHOS is to calculte the | |
22 | // induced charged in the PIN diode, taking into account light | |
23 | // tracking in the PbWO4 crystal, induced signal in the | |
24 | // PIN due to MIPS particle and electronic noise. | |
25 | // This is done in the StepManager | |
26 | // | |
27 | //*-- Author: Odd Harald Oddland & Gines Martinez (SUBATECH) | |
28 | ||
29 | ||
30 | // --- ROOT system --- | |
31 | #include "TRandom.h" | |
32 | ||
33 | // --- Standard library --- | |
34 | ||
35 | #include <stdio.h> | |
36 | #include <string.h> | |
37 | #include <stdlib.h> | |
38 | #include <strstream.h> | |
39 | ||
40 | // --- AliRoot header files --- | |
41 | ||
42 | #include "AliPHOSv3.h" | |
43 | #include "AliPHOSHit.h" | |
44 | #include "AliPHOSDigit.h" | |
45 | #include "AliRun.h" | |
46 | #include "AliConst.h" | |
94de3818 | 47 | #include "AliMC.h" |
5f20d3fb | 48 | |
49 | ClassImp(AliPHOSv3) | |
50 | ||
51 | //____________________________________________________________________________ | |
e04976bd | 52 | AliPHOSv3::AliPHOSv3(const char *name, const char *title): |
53 | AliPHOSv1(name,title) | |
5f20d3fb | 54 | { |
55 | // ctor | |
56 | ||
57 | // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using | |
58 | // following formula | |
59 | // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency * | |
60 | // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) * | |
61 | // RecalibrationFactor ; | |
62 | // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko | |
63 | // PINEfficiency is 0.1875 from Odd Harald Odland work | |
64 | // k_0 is 0.0045 from Valery Antonenko | |
65 | ||
e04976bd | 66 | |
5f20d3fb | 67 | fLightYieldMean = 700000. ; |
68 | fIntrinsicPINEfficiency = 0.1875 ; | |
69 | fLightYieldAttenuation = 0.0045 ; | |
70 | fRecalibrationFactor = 6.2 / fLightYieldMean ; | |
71 | fElectronsPerGeV = 2.77e+8 ; | |
72 | } | |
73 | ||
74 | //____________________________________________________________________________ | |
75 | AliPHOSv3::AliPHOSv3(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title): | |
76 | AliPHOSv1(Reconstructioner,name,title) | |
77 | { | |
78 | // ctor | |
79 | ||
80 | // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using | |
81 | // following formula | |
82 | // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency * | |
83 | // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) * | |
84 | // RecalibrationFactor ; | |
85 | // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko | |
86 | // PINEfficiency is 0.1875 from Odd Harald Odland work | |
87 | // k_0 is 0.0045 from Valery Antonenko | |
88 | ||
89 | fLightYieldMean = 700000.; | |
90 | fIntrinsicPINEfficiency = 0.1875 ; | |
91 | fLightYieldAttenuation = 0.0045 ; | |
92 | fRecalibrationFactor = 6.2 / fLightYieldMean ; | |
93 | fElectronsPerGeV = 2.77e+8 ; | |
94 | } | |
95 | ||
96 | //____________________________________________________________________________ | |
97 | void AliPHOSv3::StepManager(void) | |
98 | { | |
99 | // Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell | |
100 | // Adds the energy deposited in the PIN diode | |
101 | ||
102 | Int_t relid[4] ; // (box, layer, row, column) indices | |
103 | Float_t xyze[4] ; // position wrt MRS and energy deposited | |
104 | TLorentzVector pos ; | |
105 | Int_t copy; | |
106 | Float_t lightyield ; // Light Yield per GeV | |
107 | Float_t nElectrons ; // Number of electrons in the PIN diode | |
108 | TString name = fGeom->GetName() ; | |
109 | Float_t global[3] ; | |
110 | Float_t local[3] ; | |
111 | Float_t lostenergy ; | |
112 | ||
113 | Int_t tracknumber = gAlice->CurrentTrack() ; | |
114 | Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() ); | |
7eb9d12d | 115 | Int_t trackpid = gMC->TrackPid() ; |
5f20d3fb | 116 | |
117 | if ( name == "GPS2" ) { // the CPV is a PPSD | |
118 | if( gMC->CurrentVolID(copy) == gMC->VolId("GCEL") ) // We are inside a gas cell | |
119 | { | |
120 | gMC->TrackPosition(pos) ; | |
121 | xyze[0] = pos[0] ; | |
122 | xyze[1] = pos[1] ; | |
123 | xyze[2] = pos[2] ; | |
124 | xyze[3] = gMC->Edep() ; | |
125 | ||
126 | ||
127 | if ( xyze[3] != 0 ) { // there is deposited energy | |
128 | gMC->CurrentVolOffID(5, relid[0]) ; // get the PHOS Module number | |
129 | gMC->CurrentVolOffID(3, relid[1]) ; // get the Micromegas Module number | |
130 | // 1-> Geom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() upper | |
131 | // > fGeom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() lower | |
132 | gMC->CurrentVolOffID(1, relid[2]) ; // get the row number of the cell | |
133 | gMC->CurrentVolID(relid[3]) ; // get the column number | |
134 | ||
135 | // get the absolute Id number | |
136 | ||
137 | Int_t absid ; | |
138 | fGeom->RelToAbsNumbering(relid,absid) ; | |
139 | ||
140 | ||
7eb9d12d | 141 | AddHit(fIshunt, primary, tracknumber, absid, xyze, trackpid); |
5f20d3fb | 142 | |
143 | } // there is deposited energy | |
144 | } // We are inside the gas of the CPV | |
145 | } // GPS2 configuration | |
146 | ||
147 | if(gMC->CurrentVolID(copy) == gMC->VolId("PXTL") )// We are inside a PBWO crystal | |
148 | { | |
149 | gMC->TrackPosition(pos) ; | |
150 | xyze[0] = pos[0] ; | |
151 | xyze[1] = pos[1] ; | |
152 | xyze[2] = pos[2] ; | |
153 | lostenergy = gMC->Edep() ; | |
154 | xyze[3] = gMC->Edep() ; | |
155 | ||
156 | global[0] = pos[0] ; | |
157 | global[1] = pos[1] ; | |
158 | global[2] = pos[2] ; | |
159 | ||
160 | if ( xyze[3] != 0 ) { | |
161 | gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ; | |
162 | relid[1] = 0 ; // means PW04 | |
163 | gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module | |
164 | gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module | |
165 | ||
166 | // get the absolute Id number | |
167 | ||
168 | Int_t absid ; | |
169 | fGeom->RelToAbsNumbering(relid,absid) ; | |
170 | gMC->Gmtod(global, local, 1) ; | |
171 | ||
172 | // calculating number of electrons in the PIN diode asociated to this hit | |
173 | lightyield = gRandom->Poisson(fLightYieldMean) ; | |
174 | nElectrons = lostenergy * lightyield * fIntrinsicPINEfficiency * | |
175 | exp(-fLightYieldAttenuation * (local[1]+fGeom->GetCrystalSize(1)/2.0 ) ) ; | |
176 | ||
177 | xyze[3] = nElectrons * fRecalibrationFactor ; | |
178 | // add current hit to the hit list | |
7eb9d12d | 179 | AddHit(fIshunt, primary, tracknumber, absid, xyze, trackpid); |
5f20d3fb | 180 | |
181 | } // there is deposited energy | |
182 | } // we are inside a PHOS Xtal | |
183 | ||
184 | if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN") ) // We are inside de PIN diode | |
185 | { | |
186 | gMC->TrackPosition(pos) ; | |
187 | xyze[0] = pos[0] ; | |
188 | xyze[1] = pos[1] ; | |
189 | xyze[2] = pos[2] ; | |
190 | lostenergy = gMC->Edep() ; | |
191 | xyze[3] = gMC->Edep() ; | |
192 | ||
193 | if ( xyze[3] != 0 ) { | |
194 | gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ; | |
195 | relid[1] = 0 ; // means PW04 and PIN | |
196 | gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module | |
197 | gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module | |
198 | ||
199 | // get the absolute Id number | |
200 | ||
201 | Int_t absid ; | |
202 | fGeom->RelToAbsNumbering(relid,absid) ; | |
203 | ||
204 | // calculating number of electrons in the PIN diode asociated to this hit | |
205 | nElectrons = lostenergy * fElectronsPerGeV ; | |
206 | xyze[3] = nElectrons * fRecalibrationFactor ; | |
207 | ||
208 | // add current hit to the hit list | |
7eb9d12d | 209 | AddHit(fIshunt, primary, tracknumber, absid, xyze, trackpid); |
5f20d3fb | 210 | //printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]); |
211 | //printf("Lost energy in the PIN is %f \n",lostenergy) ; | |
212 | } // there is deposited energy | |
213 | } // we are inside a PHOS XtalPHOS PIN diode | |
214 | } |