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1 | /************************************************************************** |
| 2 | * Copyright(c) 2007-2009, ALICE Experiment at CERN, All rights reserved. * |
| 3 | * * |
| 4 | * Author: The ALICE Off-line Project. * |
| 5 | * Contributors are mentioned in the code where appropriate. * |
| 6 | * * |
| 7 | * Permission to use, copy, modify and distribute this software and its * |
| 8 | * documentation strictly for non-commercial purposes is hereby granted * |
| 9 | * without fee, provided that the above copyright notice appears in all * |
| 10 | * copies and that both the copyright notice and this permission notice * |
| 11 | * appear in the supporting documentation. The authors make no claims * |
| 12 | * about the suitability of this software for any purpose. It is * |
| 13 | * provided "as is" without express or implied warranty. * |
| 14 | **************************************************************************/ |
| 15 | |
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16 | /* $Id$ */ |
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17 | |
| 18 | /////////////////////////////////////////////////////////////////// |
| 19 | // // |
| 20 | // Implementation of the class to store the parameters used in // |
| 21 | // the simulation of SPD, SDD and SSD detectors // |
| 22 | // Origin: F.Prino, Torino, prino@to.infn.it // |
| 23 | // // |
| 24 | /////////////////////////////////////////////////////////////////// |
| 25 | |
| 26 | #include "AliITSSimuParam.h" |
| 27 | #include <TMath.h> |
| 28 | |
| 29 | const Float_t AliITSSimuParam::fgkSPDBiasVoltageDefault = 18.182; |
| 30 | const Double_t AliITSSimuParam::fgkSPDThreshDefault = 3000.; |
| 31 | const Double_t AliITSSimuParam::fgkSPDSigmaDefault = 250.; |
| 32 | const TString AliITSSimuParam::fgkSPDCouplingOptDefault = "old"; |
| 33 | const Double_t AliITSSimuParam::fgkSPDCouplColDefault = 0.; |
| 34 | const Double_t AliITSSimuParam::fgkSPDCouplRowDefault = 0.055; |
| 35 | const Float_t AliITSSimuParam::fgkSPDEccDiffDefault = 0.85; |
| 36 | const Float_t AliITSSimuParam::fgkSDDDiffCoeffDefault = 3.23; |
| 37 | const Float_t AliITSSimuParam::fgkSDDDiffCoeff1Default = 30.; |
| 38 | const Float_t AliITSSimuParam::fgkSDDJitterErrorDefault = 20.; // 20 um from beam test 2001 |
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39 | const Float_t AliITSSimuParam::fgkSDDDynamicRangeDefault = 1400./2.5; // mV/MOhm = nA |
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40 | const Int_t AliITSSimuParam::fgkSDDMaxAdcDefault = 1024; |
| 41 | const Float_t AliITSSimuParam::fgkSDDChargeLossDefault = 0.; |
| 42 | const Double_t AliITSSimuParam::fgkSSDCouplingPRDefault = 0.01; |
| 43 | const Double_t AliITSSimuParam::fgkSSDCouplingPLDefault = 0.01; |
| 44 | const Double_t AliITSSimuParam::fgkSSDCouplingNRDefault = 0.01; |
| 45 | const Double_t AliITSSimuParam::fgkSSDCouplingNLDefault = 0.01; |
| 46 | const Int_t AliITSSimuParam::fgkSSDZSThresholdDefault = 3; |
| 47 | |
| 48 | const Float_t AliITSSimuParam::fgkNsigmasDefault = 3.; |
| 49 | const Int_t AliITSSimuParam::fgkNcompsDefault = 121; |
| 50 | |
| 51 | ClassImp(AliITSSimuParam) |
| 52 | |
| 53 | //______________________________________________________________________ |
| 54 | AliITSSimuParam::AliITSSimuParam(): |
| 55 | TObject(), |
| 56 | fGeVcharge(0.), |
| 57 | fDOverV(0.), |
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58 | //fSPDBiasVoltage(fgkSPDBiasVoltageDefault), |
| 59 | //fSPDThresh(fgkSPDThreshDefault), |
| 60 | //fSPDSigma(fgkSPDSigmaDefault), |
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61 | fSPDCouplOpt(0), |
| 62 | fSPDCouplCol(fgkSPDCouplColDefault), |
| 63 | fSPDCouplRow(fgkSPDCouplRowDefault), |
| 64 | fSPDEccDiff(0.), |
| 65 | fSDDElectronics(0), |
| 66 | fSDDDiffCoeff(0.), |
| 67 | fSDDDiffCoeff1(0.), |
| 68 | fSDDJitterError(fgkSDDJitterErrorDefault), |
| 69 | fSDDDynamicRange(fgkSDDDynamicRangeDefault), |
| 70 | fSDDMaxAdc(0.), |
| 71 | fSDDChargeLoss(fgkSDDChargeLossDefault), |
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72 | fSSDCouplingPR(0), |
| 73 | fSSDCouplingPL(0), |
| 74 | fSSDCouplingNR(0), |
| 75 | fSSDCouplingNL(0), |
| 76 | fSSDZSThreshold(fgkSSDZSThresholdDefault), |
| 77 | fNsigmas(fgkNsigmasDefault), |
| 78 | fNcomps(fgkNcompsDefault), |
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79 | fGaus(), |
| 80 | fN(0.), |
| 81 | fT(300.) |
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82 | { |
| 83 | // default constructor |
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84 | SetSPDBiasVoltageAll(fgkSPDBiasVoltageDefault); |
| 85 | SetSPDThresholdsAll(fgkSPDThreshDefault,fgkSPDSigmaDefault); |
| 86 | SetSPDNoiseAll(0,0); |
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87 | SetGeVToCharge(); |
| 88 | SetDistanceOverVoltage(); |
| 89 | SetSPDCouplingOption(fgkSPDCouplingOptDefault); |
| 90 | SetSPDSigmaDiffusionAsymmetry(fgkSPDEccDiffDefault); |
| 91 | SetSDDElectronics(); |
| 92 | SetSDDDiffCoeff(fgkSDDDiffCoeffDefault,fgkSDDDiffCoeff1Default); |
| 93 | SetSDDMaxAdc((Double_t)fgkSDDMaxAdcDefault); |
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94 | SetSSDCouplings(fgkSSDCouplingPRDefault,fgkSSDCouplingPLDefault,fgkSSDCouplingNRDefault,fgkSSDCouplingNLDefault); |
| 95 | } |
| 96 | //______________________________________________________________________ |
| 97 | AliITSSimuParam::AliITSSimuParam(const AliITSSimuParam &simpar): |
| 98 | TObject(), |
| 99 | fGeVcharge(simpar.fGeVcharge), |
| 100 | fDOverV(simpar.fDOverV), |
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101 | //fSPDBiasVoltage(simpar.fSPDBiasVoltage), |
| 102 | //fSPDThresh(simpar.fSPDThresh), |
| 103 | //fSPDSigma(simpar.fSPDSigma), |
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104 | fSPDCouplOpt(simpar.fSPDCouplOpt), |
| 105 | fSPDCouplCol(simpar.fSPDCouplCol), |
| 106 | fSPDCouplRow(simpar.fSPDCouplRow), |
| 107 | fSPDEccDiff(simpar.fSPDEccDiff), |
| 108 | fSDDElectronics(simpar.fSDDElectronics), |
| 109 | fSDDDiffCoeff(simpar.fSDDDiffCoeff), |
| 110 | fSDDDiffCoeff1(simpar.fSDDDiffCoeff1), |
| 111 | fSDDJitterError(simpar.fSDDJitterError), |
| 112 | fSDDDynamicRange(simpar.fSDDDynamicRange), |
| 113 | fSDDMaxAdc(simpar.fSDDMaxAdc), |
| 114 | fSDDChargeLoss(simpar.fSDDChargeLoss), |
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115 | fSSDCouplingPR(simpar.fSSDCouplingPR), |
| 116 | fSSDCouplingPL(simpar.fSSDCouplingPL), |
| 117 | fSSDCouplingNR(simpar.fSSDCouplingNR), |
| 118 | fSSDCouplingNL(simpar.fSSDCouplingNL), |
| 119 | fSSDZSThreshold(simpar.fSSDZSThreshold), |
| 120 | fNsigmas(simpar.fNsigmas), |
| 121 | fNcomps(simpar.fNcomps), |
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122 | fGaus(), |
| 123 | fN(simpar.fN), |
| 124 | fT(simpar.fT){ |
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125 | // copy constructor |
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126 | for (Int_t i=0;i<240;i++) { |
| 127 | fSPDBiasVoltage[i]=simpar.fSPDBiasVoltage[i]; |
| 128 | fSPDThresh[i]=simpar.fSPDThresh[i]; |
| 129 | fSPDSigma[i]=simpar.fSPDSigma[i]; |
| 130 | fSPDNoise[i]=simpar.fSPDNoise[i]; |
| 131 | fSPDBaseline[i]=simpar.fSPDBaseline[i]; |
| 132 | } |
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133 | } |
| 134 | |
| 135 | //______________________________________________________________________ |
| 136 | AliITSSimuParam& AliITSSimuParam::operator=(const AliITSSimuParam& source){ |
| 137 | // Assignment operator. |
| 138 | this->~AliITSSimuParam(); |
| 139 | new(this) AliITSSimuParam(source); |
| 140 | return *this; |
| 141 | |
| 142 | } |
| 143 | |
| 144 | |
| 145 | //______________________________________________________________________ |
| 146 | AliITSSimuParam::~AliITSSimuParam() { |
| 147 | // destructor |
| 148 | if(fGaus) delete fGaus; |
| 149 | } |
| 150 | //________________________________________________________________________ |
| 151 | void AliITSSimuParam::SetNLookUp(Int_t p1){ |
| 152 | // Set number of sigmas over which cluster disintegration is performed |
| 153 | fNcomps=p1; |
| 154 | if (fGaus) delete fGaus; |
| 155 | fGaus = new TArrayF(fNcomps+1); |
| 156 | for(Int_t i=0; i<=fNcomps; i++) { |
| 157 | Float_t x = -fNsigmas + (2.*i*fNsigmas)/(fNcomps-1); |
| 158 | (*fGaus)[i] = exp(-((x*x)/2)); |
| 159 | } |
| 160 | } |
| 161 | //________________________________________________________________________ |
| 162 | void AliITSSimuParam::PrintParameters() const{ |
| 163 | printf("GeVToCharge = %G\n",fGeVcharge); |
| 164 | printf("DistanveOverVoltage = %f \n",fDOverV); |
| 165 | printf("\n"); |
| 166 | printf("===== SPD parameters =====\n"); |
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167 | printf("Bias Voltage = %f \n",fSPDBiasVoltage[0]); |
| 168 | printf("Threshold and sigma = %f %f\n",fSPDThresh[0],fSPDSigma[0]); |
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169 | printf("Coupling Option = %s\n",fSPDCouplOpt.Data()); |
| 170 | printf("Coupling value (column) = %f\n",fSPDCouplCol); |
| 171 | printf("Coupling value (row) = %f\n",fSPDCouplRow); |
| 172 | printf("Eccentricity in diffusion = %f\n",fSPDEccDiff); |
| 173 | printf("\n"); |
| 174 | printf("===== SDD parameters =====\n"); |
| 175 | printf("Electronic chips = %d\n",fSDDElectronics); |
| 176 | printf("Diffusion Coefficients = %f %f\n",fSDDDiffCoeff,fSDDDiffCoeff1); |
| 177 | printf("Jitter Error = %f um\n",fSDDJitterError); |
| 178 | printf("Dynamic Range = %f\n",fSDDDynamicRange); |
| 179 | printf("Max. ADC = %f\n",fSDDMaxAdc); |
| 180 | printf("Charge Loss = %f\n",fSDDChargeLoss); |
| 181 | printf("\n"); |
| 182 | printf("===== SSD parameters =====\n"); |
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183 | printf("Coupling PR = %f\n",fSSDCouplingPR); |
| 184 | printf("Coupling PL = %f\n",fSSDCouplingPL); |
| 185 | printf("Coupling NR = %f\n",fSSDCouplingNR); |
| 186 | printf("Coupling NL = %f\n",fSSDCouplingNL); |
| 187 | printf("Zero Supp threshold = %d\n",fSSDZSThreshold); |
| 188 | } |
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189 | //______________________________________________________________________ |
| 190 | Double_t AliITSSimuParam::MobilityElectronSiEmp() const { |
| 191 | // Computes the electron mobility in cm^2/volt-sec. Taken from SILVACO |
| 192 | // International ATLAS II, 2D Device Simulation Framework, User Manual |
| 193 | // Chapter 5 Equation 5-6. An empirical function for low-field mobiliity |
| 194 | // in silicon at different tempeatures. |
| 195 | // Inputs: |
| 196 | // none. |
| 197 | // Output: |
| 198 | // none. |
| 199 | // Return: |
| 200 | // The Mobility of electrons in Si at a give temprature and impurity |
| 201 | // concentration. [cm^2/Volt-sec] |
| 202 | const Double_t km0 = 55.24; // cm^2/Volt-sec |
| 203 | const Double_t km1 = 7.12E+08; // cm^2 (degree K)^2.3 / Volt-sec |
| 204 | const Double_t kN0 = 1.072E17; // #/cm^3 |
| 205 | const Double_t kT0 = 300.; // degree K. |
| 206 | const Double_t keT0 = -2.3; // Power of Temp. |
| 207 | const Double_t keT1 = -3.8; // Power of Temp. |
| 208 | const Double_t keN = 0.73; // Power of Dopent Consentrations |
| 209 | Double_t m; |
| 210 | Double_t tT = fT,nN = fN; |
| 211 | |
| 212 | if(nN<=0.0){ // Simple case. |
| 213 | if(tT==300.) return 1350.0; // From Table 5-1 at consentration 1.0E14. |
| 214 | m = km1*TMath::Power(tT,keT0); |
| 215 | return m; |
| 216 | } // if nN<=0.0 |
| 217 | m = km1*TMath::Power(tT,keT0) - km0; |
| 218 | m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN); |
| 219 | m += km0; |
| 220 | return m; |
| 221 | } |
| 222 | //______________________________________________________________________ |
| 223 | Double_t AliITSSimuParam::MobilityHoleSiEmp() const { |
| 224 | // Computes the Hole mobility in cm^2/volt-sec. Taken from SILVACO |
| 225 | // International ATLAS II, 2D Device Simulation Framework, User Manual |
| 226 | // Chapter 5 Equation 5-7 An empirical function for low-field mobiliity |
| 227 | // in silicon at different tempeatures. |
| 228 | // Inputs: |
| 229 | // none. |
| 230 | // Output: |
| 231 | // none. |
| 232 | // Return: |
| 233 | // The Mobility of Hole in Si at a give temprature and impurity |
| 234 | // concentration. [cm^2/Volt-sec] |
| 235 | const Double_t km0a = 49.74; // cm^2/Volt-sec |
| 236 | const Double_t km0b = 49.70; // cm^2/Volt-sec |
| 237 | const Double_t km1 = 1.35E+08; // cm^2 (degree K)^2.3 / Volt-sec |
| 238 | const Double_t kN0 = 1.606E17; // #/cm^3 |
| 239 | const Double_t kT0 = 300.; // degree K. |
| 240 | const Double_t keT0 = -2.2; // Power of Temp. |
| 241 | const Double_t keT1 = -3.7; // Power of Temp. |
| 242 | const Double_t keN = 0.70; // Power of Dopent Consentrations |
| 243 | Double_t m; |
| 244 | Double_t tT = fT,nN = fN; |
| 245 | |
| 246 | if(nN<=0.0){ // Simple case. |
| 247 | if(tT==300.) return 495.0; // From Table 5-1 at consentration 1.0E14. |
| 248 | m = km1*TMath::Power(tT,keT0) + km0a-km0b; |
| 249 | return m; |
| 250 | } // if nN<=0.0 |
| 251 | m = km1*TMath::Power(tT,keT0) - km0b; |
| 252 | m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN); |
| 253 | m += km0a; |
| 254 | return m; |
| 255 | } |
| 256 | //______________________________________________________________________ |
| 257 | Double_t AliITSSimuParam::DiffusionCoefficientElectron() const { |
| 258 | // Computes the Diffusion coefficient for electrons in cm^2/sec. Taken |
| 259 | // from SILVACO International ATLAS II, 2D Device Simulation Framework, |
| 260 | // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion |
| 261 | // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec. |
| 262 | // Inputs: |
| 263 | // none. |
| 264 | // Output: |
| 265 | // none. |
| 266 | // Return: |
| 267 | // The Diffusion Coefficient of electrons in Si at a give temprature |
| 268 | // and impurity concentration. [cm^2/sec] |
| 269 | // const Double_t kb = 1.3806503E-23; // Joules/degree K |
| 270 | // const Double_t qe = 1.60217646E-19; // Coulumbs. |
| 271 | const Double_t kbqe = 8.617342312E-5; // Volt/degree K |
| 272 | Double_t m = MobilityElectronSiEmp(); |
| 273 | Double_t tT = fT; |
| 274 | |
| 275 | return m*kbqe*tT; // [cm^2/sec] |
| 276 | } |
| 277 | //______________________________________________________________________ |
| 278 | Double_t AliITSSimuParam::DiffusionCoefficientHole() const { |
| 279 | // Computes the Diffusion coefficient for Holes in cm^2/sec. Taken |
| 280 | // from SILVACO International ATLAS II, 2D Device Simulation Framework, |
| 281 | // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion |
| 282 | // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec. |
| 283 | // Inputs: |
| 284 | // none. |
| 285 | // Output: |
| 286 | // none. |
| 287 | // Return: |
| 288 | // The Defusion Coefficient of Hole in Si at a give temprature and |
| 289 | // impurity concentration. [cm^2/sec] |
| 290 | // and impurity concentration. [cm^2/sec] |
| 291 | // const Double_t kb = 1.3806503E-23; // Joules/degree K |
| 292 | // const Double_t qe = 1.60217646E-19; // Coulumbs. |
| 293 | const Double_t kbqe = 8.617342312E-5; // Volt/degree K |
| 294 | Double_t m = MobilityHoleSiEmp(); |
| 295 | Double_t tT = fT; |
| 296 | |
| 297 | return m*kbqe*tT; // [cm^2/sec] |
| 298 | } |
| 299 | //______________________________________________________________________ |
| 300 | Double_t AliITSSimuParam::LorentzAngleHole(Double_t B) const { |
| 301 | // Computes the Lorentz angle for electrons in Si |
| 302 | // Input: magnetic Field in KGauss |
| 303 | // Output: Lorentz angle in radians (positive if Bz is positive) |
| 304 | // Main Reference: NIM A 497 (2003) 389–396. |
| 305 | // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al. |
| 306 | // |
| 307 | const Double_t krH=0.70; // Hall scattering factor for Hole |
| 308 | const Double_t kT0 = 300.; // reference Temperature (degree K). |
| 309 | const Double_t kmulow0 = 470.5; // cm^2/Volt-sec |
| 310 | const Double_t keT0 = -2.5; // Power of Temp. |
| 311 | const Double_t beta0 = 1.213; // beta coeff. at T0=300K |
| 312 | const Double_t keT1 = 0.17; // Power of Temp. for beta |
| 313 | const Double_t kvsat0 = 8.37E+06; // saturated velocity at T0=300K (cm/sec) |
| 314 | const Double_t keT2 = 0.52; // Power of Temp. for vsat |
| 315 | Double_t tT = fT; |
| 316 | Double_t eE= 1./fDOverV; |
| 317 | Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0); |
| 318 | Double_t beta=beta0*TMath::Power(tT/kT0,keT1); |
| 319 | Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2); |
| 320 | Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta); |
| 321 | Double_t angle=TMath::ATan(krH*mu*B*1.E-05); // Conversion Factor |
| 322 | return angle; |
| 323 | } |
| 324 | //______________________________________________________________________ |
| 325 | Double_t AliITSSimuParam::LorentzAngleElectron(Double_t B) const { |
| 326 | // Computes the Lorentz angle for electrons in Si |
| 327 | // Input: magnetic Field in KGauss |
| 328 | // Output: Lorentz angle in radians (positive if Bz is positive) |
| 329 | // Main Reference: NIM A 497 (2003) 389–396. |
| 330 | // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al. |
| 331 | // |
| 332 | const Double_t krH=1.15; // Hall scattering factor for Electron |
| 333 | const Double_t kT0 = 300.; // reference Temperature (degree K). |
| 334 | const Double_t kmulow0 = 1417.0; // cm^2/Volt-sec |
| 335 | const Double_t keT0 = -2.2; // Power of Temp. |
| 336 | const Double_t beta0 = 1.109; // beta coeff. at T0=300K |
| 337 | const Double_t keT1 = 0.66; // Power of Temp. for beta |
| 338 | const Double_t kvsat0 = 1.07E+07; // saturated velocity at T0=300K (cm/sec) |
| 339 | const Double_t keT2 = 0.87; // Power of Temp. for vsat |
| 340 | Double_t tT = fT; |
| 341 | Double_t eE= 1./fDOverV; |
| 342 | Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0); |
| 343 | Double_t beta=beta0*TMath::Power(tT/kT0,keT1); |
| 344 | Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2); |
| 345 | Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta); |
| 346 | Double_t angle=TMath::ATan(krH*mu*B*1.E-05); |
| 347 | return angle; |
| 348 | } |
| 349 | //______________________________________________________________________ |
| 350 | Double_t AliITSSimuParam::SpeedElectron() const { |
| 351 | // Computes the average speed for electrons in Si under the low-field |
| 352 | // approximation. [cm/sec]. |
| 353 | // Inputs: |
| 354 | // none. |
| 355 | // Output: |
| 356 | // none. |
| 357 | // Return: |
| 358 | // The speed the holes are traveling at due to the low field applied. |
| 359 | // [cm/sec] |
| 360 | Double_t m = MobilityElectronSiEmp(); |
| 361 | |
| 362 | return m/fDOverV; // [cm/sec] |
| 363 | } |
| 364 | //______________________________________________________________________ |
| 365 | Double_t AliITSSimuParam::SpeedHole() const { |
| 366 | // Computes the average speed for Holes in Si under the low-field |
| 367 | // approximation.[cm/sec]. |
| 368 | // Inputs: |
| 369 | // none. |
| 370 | // Output: |
| 371 | // none. |
| 372 | // Return: |
| 373 | // The speed the holes are traveling at due to the low field applied. |
| 374 | // [cm/sec] |
| 375 | Double_t m = MobilityHoleSiEmp(); |
| 376 | |
| 377 | return m/fDOverV; // [cm/sec] |
| 378 | } |
| 379 | //______________________________________________________________________ |
| 380 | Double_t AliITSSimuParam::SigmaDiffusion3D(Double_t l) const { |
| 381 | // Returns the Gaussian sigma^2 == <x^2+y^2+z^2> [cm^2] due to the |
| 382 | // defusion of electrons or holes through a distance l [cm] caused |
| 383 | // by an applied voltage v [volt] through a distance d [cm] in any |
| 384 | // material at a temperature T [degree K]. The sigma diffusion when |
| 385 | // expressed in terms of the distance over which the diffusion |
| 386 | // occures, l=time/speed, is independent of the mobility and therefore |
| 387 | // the properties of the material. The charge distributions is given by |
| 388 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 6Dt where D=mkT/e |
| 389 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric |
| 390 | // charge. and vel=m*v/d. consiquently sigma^2=6kTdl/ev. |
| 391 | // Inputs: |
| 392 | // Double_t l Distance the charge has to travel. |
| 393 | // Output: |
| 394 | // none. |
| 395 | // Return: |
| 396 | // The Sigma due to the diffution of electrons. [cm] |
| 397 | const Double_t kcon = 5.17040258E-04; // == 6k/e [J/col or volts] |
| 398 | |
| 399 | return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm] |
| 400 | } |
| 401 | //______________________________________________________________________ |
| 402 | Double_t AliITSSimuParam::SigmaDiffusion2D(Double_t l) const { |
| 403 | // Returns the Gaussian sigma^2 == <x^2+z^2> [cm^2] due to the defusion |
| 404 | // of electrons or holes through a distance l [cm] caused by an applied |
| 405 | // voltage v [volt] through a distance d [cm] in any material at a |
| 406 | // temperature T [degree K]. The sigma diffusion when expressed in terms |
| 407 | // of the distance over which the diffusion occures, l=time/speed, is |
| 408 | // independent of the mobility and therefore the properties of the |
| 409 | // material. The charge distributions is given by |
| 410 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <x^2+z^2> = 4Dt where D=mkT/e |
| 411 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric |
| 412 | // charge. and vel=m*v/d. consiquently sigma^2=4kTdl/ev. |
| 413 | // Inputs: |
| 414 | // Double_t l Distance the charge has to travel. |
| 415 | // Output: |
| 416 | // none. |
| 417 | // Return: |
| 418 | // The Sigma due to the diffution of electrons. [cm] |
| 419 | const Double_t kcon = 3.446935053E-04; // == 4k/e [J/col or volts] |
| 420 | |
| 421 | return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm] |
| 422 | } |
| 423 | //______________________________________________________________________ |
| 424 | Double_t AliITSSimuParam::SigmaDiffusion1D(Double_t l) const { |
| 425 | // Returns the Gaussian sigma^2 == <x^2> [cm^2] due to the defusion |
| 426 | // of electrons or holes through a distance l [cm] caused by an applied |
| 427 | // voltage v [volt] through a distance d [cm] in any material at a |
| 428 | // temperature T [degree K]. The sigma diffusion when expressed in terms |
| 429 | // of the distance over which the diffusion occures, l=time/speed, is |
| 430 | // independent of the mobility and therefore the properties of the |
| 431 | // material. The charge distributions is given by |
| 432 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 2Dt where D=mkT/e |
| 433 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric |
| 434 | // charge. and vel=m*v/d. consiquently sigma^2=2kTdl/ev. |
| 435 | // Inputs: |
| 436 | // Double_t l Distance the charge has to travel. |
| 437 | // Output: |
| 438 | // none. |
| 439 | // Return: |
| 440 | // The Sigma due to the diffution of electrons. [cm] |
| 441 | const Double_t kcon = 1.723467527E-04; // == 2k/e [J/col or volts] |
| 442 | |
| 443 | return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm] |
| 444 | } |
| 445 | //---------------------------------------------------------------------- |
| 446 | Double_t AliITSSimuParam::DepletedRegionThicknessA(Double_t dopCons, |
| 447 | Double_t voltage, |
| 448 | Double_t elecCharge, |
| 449 | Double_t voltBuiltIn)const{ |
| 450 | // Computes the thickness of the depleted region in Si due to the |
| 451 | // application of an external bias voltage. From the Particle Data |
| 452 | // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004) |
| 453 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 |
| 454 | // July 15 2004, ISSN 0370-2693 page 263. First equation. |
| 455 | // Inputs: |
| 456 | // Double_t dopCons "N" doping concentration |
| 457 | // Double_t voltage "V" external bias voltage |
| 458 | // Double_t elecCharge "e" electronic charge |
| 459 | // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for |
| 460 | // resistivities typically used in detectors) |
| 461 | // Output: |
| 462 | // none. |
| 463 | // Return: |
| 464 | // The thickness of the depleted region |
| 465 | |
| 466 | return TMath::Sqrt(2.0*(voltage+voltBuiltIn)/(dopCons*elecCharge)); |
| 467 | } |
| 468 | //---------------------------------------------------------------------- |
| 469 | Double_t AliITSSimuParam::DepletedRegionThicknessB(Double_t resist, |
| 470 | Double_t voltage, |
| 471 | Double_t mobility, |
| 472 | Double_t voltBuiltIn, |
| 473 | Double_t dielConst)const{ |
| 474 | // Computes the thickness of the depleted region in Si due to the |
| 475 | // application of an external bias voltage. From the Particle Data |
| 476 | // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004) |
| 477 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 |
| 478 | // July 15 2004, ISSN 0370-2693 page 263. Second Equation. |
| 479 | // Inputs: |
| 480 | // Double_t resist "rho" resistivity (typically 1-10 kOhm cm) |
| 481 | // Double_t voltage "V" external bias voltage |
| 482 | // Double_t mobility "mu" charge carrier mobility |
| 483 | // (electons 1350, holes 450 cm^2/V/s) |
| 484 | // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for |
| 485 | // resistivities typically used in detectors) |
| 486 | // Double_t dielConst=1.E-12 "epsilon" dielectric constant = 11.9 * |
| 487 | // (permittivity of free space) or ~ 1 pF/cm |
| 488 | // Output: |
| 489 | // none. |
| 490 | // Return: |
| 491 | // The thickness of the depleted region |
| 492 | |
| 493 | return TMath::Sqrt(2.8*resist*mobility*dielConst*(voltage+voltBuiltIn)); |
| 494 | } |
| 495 | //---------------------------------------------------------------------- |
| 496 | Double_t AliITSSimuParam::ReverseBiasCurrent(Double_t temp, |
| 497 | Double_t revBiasCurT1, |
| 498 | Double_t tempT1, |
| 499 | Double_t energy)const{ |
| 500 | // Computes the temperature dependance of the reverse bias current |
| 501 | // of Si detectors. From the Particle Data |
| 502 | // Book, 28.8 Silicon semiconductor detectors equation 28.21 (2004) |
| 503 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 |
| 504 | // July 15 2004, ISSN 0370-2693 page 263. |
| 505 | // Inputs: |
| 506 | // Double_t temp The temperature at which the current is wanted |
| 507 | // Double_t revBiasCurT1 The reference bias current at temp T1 |
| 508 | // Double_t tempT1 The temperature correstponding to revBiasCurT1 |
| 509 | // Double_t energy=1.2 Some energy [eV] |
| 510 | // Output: |
| 511 | // none. |
| 512 | // Return: |
| 513 | // The reverse bias current at the tempeature temp. |
| 514 | const Double_t kBoltz = 8.617343E-5; //[eV/K] |
| 515 | |
| 516 | return revBiasCurT1*(temp*temp/(tempT1*tempT1))* |
| 517 | TMath::Exp(-0.5*energy*(tempT1-temp)/(kBoltz*tempT1*temp)); |
| 518 | } |
| 519 | //______________________________________________________________________ |
| 520 | void AliITSSimuParam::SPDThresholds(const Int_t mod, Double_t& thresh, Double_t& sigma) const { |
| 521 | if(mod<0 || mod>239) { |
| 522 | thresh=0; |
| 523 | sigma=0; |
| 524 | return; |
| 525 | } |
| 526 | thresh=fSPDThresh[mod]; |
| 527 | sigma=fSPDSigma[mod]; |
| 528 | return; |
| 529 | } |
| 530 | //_______________________________________________________________________ |
| 531 | void AliITSSimuParam::SPDNoise(const Int_t mod,Double_t &noise, Double_t &baseline) const { |
| 532 | if(mod<0 || mod>239) { |
| 533 | noise=0; |
| 534 | baseline=0; |
| 535 | return; |
| 536 | } |
| 537 | noise=fSPDNoise[mod]; |
| 538 | baseline=fSPDBaseline[mod]; |
| 539 | return; |
| 540 | } |
| 541 | |
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