Made the typedef public
[u/mrichter/AliRoot.git] / PHOS / AliPHOSv2.cxx
CommitLineData
bea63bea 1/**************************************************************************
2 * Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
3 * *
4 * Author: The ALICE Off-line Project. *
5 * Contributors are mentioned in the code where appropriate. *
6 * *
7 * Permission to use, copy, modify and distribute this software and its *
8 * documentation strictly for non-commercial purposes is hereby granted *
9 * without fee, provided that the above copyright notice appears in all *
10 * copies and that both the copyright notice and this permission notice *
11 * appear in the supporting documentation. The authors make no claims *
12 * about the suitability of this software for any purpose. It is *
13 * provided "as is" without express or implied warranty. *
14 **************************************************************************/
15
16/* $Id$ */
17
18//_________________________________________________________________________
19// Implementation version v0 of PHOS Manager class
20// Layout EMC + PPSD has name GPS2
21// The main goal of this version of AliPHOS is to calculte the
22// induced charged in the PIN diode, taking into account light
23// tracking in the PbWO4 crystal, induced signal in the
24// PIN due to MIPS particle and electronic noise.
25// This is done in the StepManager
26//
27//*-- Author: Odd Harald Oddland & Gines Martinez (SUBATECH)
28
29
30// --- ROOT system ---
31#include "TRandom.h"
32
33// --- Standard library ---
34
35#include <stdio.h>
36#include <string.h>
37#include <stdlib.h>
38#include <strstream.h>
39
40// --- AliRoot header files ---
41
42#include "AliPHOSv2.h"
43#include "AliPHOSHit.h"
44#include "AliPHOSDigit.h"
45#include "AliRun.h"
46#include "AliConst.h"
47
48ClassImp(AliPHOSv2)
49
50//____________________________________________________________________________
51AliPHOSv2::AliPHOSv2(const char *name, const char *title):
52 AliPHOSv0(name,title)
53{
54 // ctor
55
56 // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
57 // following formula
58 // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
59 // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
60 // RecalibrationFactor ;
61 // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
62 // PINEfficiency is 0.1875 from Odd Harald Odland work
63 // k_0 is 0.0045 from Valery Antonenko
64
65 fLightYieldMean = 700000. ;
66 fIntrinsicPINEfficiency = 0.1875 ;
67 fLightYieldAttenuation = 0.0045 ;
68 fRecalibrationFactor = 6.2 / fLightYieldMean ;
69 fElectronsPerGeV = 2.77e+8 ;
70}
71
72//____________________________________________________________________________
73AliPHOSv2::AliPHOSv2(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title):
74 AliPHOSv0(Reconstructioner,name,title)
75{
76 // ctor
77
78 // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
79 // following formula
80 // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
81 // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
82 // RecalibrationFactor ;
83 // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
84 // PINEfficiency is 0.1875 from Odd Harald Odland work
85 // k_0 is 0.0045 from Valery Antonenko
86
87 fLightYieldMean = 700000.;
88 fIntrinsicPINEfficiency = 0.1875 ;
89 fLightYieldAttenuation = 0.0045 ;
90 fRecalibrationFactor = 6.2 / fLightYieldMean ;
91 fElectronsPerGeV = 2.77e+8 ;
92}
93
94//____________________________________________________________________________
95void AliPHOSv2::StepManager(void)
96{
97 // Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell
98 // Adds the energy deposited in the PIN diode
99
100 Int_t relid[4] ; // (box, layer, row, column) indices
101 Float_t xyze[4] ; // position wrt MRS and energy deposited
102 TLorentzVector pos ;
103 Int_t copy;
104 Float_t lightyield ; // Light Yield per GeV
105 Float_t nElectrons ; // Number of electrons in the PIN diode
106 TString name = fGeom->GetName() ;
107 Float_t global[3] ;
108 Float_t local[3] ;
109 Float_t lostenergy ;
110
111 Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() );
112
113 if ( name == "GPS2" ) { // the CPV is a PPSD
114 if( gMC->CurrentVolID(copy) == gMC->VolId("GCEL") ) // We are inside a gas cell
115 {
116 gMC->TrackPosition(pos) ;
117 xyze[0] = pos[0] ;
118 xyze[1] = pos[1] ;
119 xyze[2] = pos[2] ;
120 xyze[3] = gMC->Edep() ;
121
122
123 if ( xyze[3] != 0 ) { // there is deposited energy
124 gMC->CurrentVolOffID(5, relid[0]) ; // get the PHOS Module number
125 gMC->CurrentVolOffID(3, relid[1]) ; // get the Micromegas Module number
126 // 1-> Geom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() upper
127 // > fGeom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() lower
128 gMC->CurrentVolOffID(1, relid[2]) ; // get the row number of the cell
129 gMC->CurrentVolID(relid[3]) ; // get the column number
130
131 // get the absolute Id number
132
133 Int_t absid ;
134 fGeom->RelToAbsNumbering(relid,absid) ;
135
136
137 AddHit(primary, absid, xyze );
138
139 } // there is deposited energy
140 } // We are inside the gas of the CPV
141 } // GPS2 configuration
142
143 if(gMC->CurrentVolID(copy) == gMC->VolId("PXTL") )// We are inside a PBWO crystal
144 {
145 gMC->TrackPosition(pos) ;
146 xyze[0] = pos[0] ;
147 xyze[1] = pos[1] ;
148 xyze[2] = pos[2] ;
149 lostenergy = gMC->Edep() ;
150 xyze[3] = gMC->Edep() ;
151
152 global[0] = pos[0] ;
153 global[1] = pos[1] ;
154 global[2] = pos[2] ;
155
156 if ( xyze[3] != 0 ) {
157 gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ;
158 relid[1] = 0 ; // means PW04
159 gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module
160 gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module
161
162 // get the absolute Id number
163
164 Int_t absid ;
165 fGeom->RelToAbsNumbering(relid,absid) ;
166 gMC->Gmtod(global, local, 1) ;
167
168 // calculating number of electrons in the PIN diode asociated to this hit
169 lightyield = gRandom->Poisson(fLightYieldMean) ;
170 nElectrons = lostenergy * lightyield * fIntrinsicPINEfficiency *
171 exp(-fLightYieldAttenuation * (local[1]+fGeom->GetCrystalSize(1)/2.0 ) ) ;
172
173 xyze[3] = nElectrons * fRecalibrationFactor ;
174 // add current hit to the hit list
175 AddHit(primary, absid, xyze);
176
177 } // there is deposited energy
178 } // we are inside a PHOS Xtal
179
180 if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN") ) // We are inside de PIN diode
181 {
182 gMC->TrackPosition(pos) ;
183 xyze[0] = pos[0] ;
184 xyze[1] = pos[1] ;
185 xyze[2] = pos[2] ;
186 lostenergy = gMC->Edep() ;
187 xyze[3] = gMC->Edep() ;
188
189 if ( xyze[3] != 0 ) {
190 gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
191 relid[1] = 0 ; // means PW04 and PIN
192 gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
193 gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module
194
195 // get the absolute Id number
196
197 Int_t absid ;
198 fGeom->RelToAbsNumbering(relid,absid) ;
199
200 // calculating number of electrons in the PIN diode asociated to this hit
201 nElectrons = lostenergy * fElectronsPerGeV ;
202 xyze[3] = nElectrons * fRecalibrationFactor ;
203
204 // add current hit to the hit list
205 AddHit(primary, absid, xyze);
206 //printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]);
207 //printf("Lost energy in the PIN is %f \n",lostenergy) ;
208 } // there is deposited energy
209 } // we are inside a PHOS XtalPHOS PIN diode
210}
211