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4 * Author: The ALICE Off-line Project. *
5 * Contributors are mentioned in the code where appropriate. *
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14 **************************************************************************/
18 ///////////////////////////////////////////////////////////////////
20 // Implementation of the class to store the parameters used in //
21 // the simulation of SPD, SDD and SSD detectors //
22 // Origin: F.Prino, Torino, prino@to.infn.it //
24 ///////////////////////////////////////////////////////////////////
26 #include "AliITSSimuParam.h"
29 const Float_t AliITSSimuParam::fgkSPDBiasVoltageDefault = 18.182;
30 const Double_t AliITSSimuParam::fgkSPDThreshDefault = 3000.;
31 const Double_t AliITSSimuParam::fgkSPDSigmaDefault = 250.;
32 const TString AliITSSimuParam::fgkSPDCouplingOptDefault = "old";
33 const Double_t AliITSSimuParam::fgkSPDCouplColDefault = 0.;
34 const Double_t AliITSSimuParam::fgkSPDCouplRowDefault = 0.055;
35 const Float_t AliITSSimuParam::fgkSPDEccDiffDefault = 0.85;
36 const Float_t AliITSSimuParam::fgkSDDDiffCoeffDefault = 3.23;
37 const Float_t AliITSSimuParam::fgkSDDDiffCoeff1Default = 30.;
38 const Float_t AliITSSimuParam::fgkSDDJitterErrorDefault = 20.; // 20 um from beam test 2001
39 const Float_t AliITSSimuParam::fgkSDDDynamicRangeDefault = 1400./2.5; // mV/MOhm = nA
40 const Int_t AliITSSimuParam::fgkSDDMaxAdcDefault = 1024;
41 const Float_t AliITSSimuParam::fgkSDDChargeLossDefault = 0.;
42 const Double_t AliITSSimuParam::fgkSSDCouplingPRDefault = 0.01;
43 const Double_t AliITSSimuParam::fgkSSDCouplingPLDefault = 0.01;
44 const Double_t AliITSSimuParam::fgkSSDCouplingNRDefault = 0.01;
45 const Double_t AliITSSimuParam::fgkSSDCouplingNLDefault = 0.01;
46 const Int_t AliITSSimuParam::fgkSSDZSThresholdDefault = 3;
48 const Float_t AliITSSimuParam::fgkNsigmasDefault = 3.;
49 const Int_t AliITSSimuParam::fgkNcompsDefault = 121;
51 ClassImp(AliITSSimuParam)
53 //______________________________________________________________________
54 AliITSSimuParam::AliITSSimuParam():
58 //fSPDBiasVoltage(fgkSPDBiasVoltageDefault),
59 //fSPDThresh(fgkSPDThreshDefault),
60 //fSPDSigma(fgkSPDSigmaDefault),
62 fSPDCouplCol(fgkSPDCouplColDefault),
63 fSPDCouplRow(fgkSPDCouplRowDefault),
65 fSPDAddNoisyFlag(kFALSE),
66 fSPDRemoveDeadFlag(kFALSE),
70 fSDDJitterError(fgkSDDJitterErrorDefault),
71 fSDDDynamicRange(fgkSDDDynamicRangeDefault),
73 fSDDChargeLoss(fgkSDDChargeLossDefault),
78 fSSDZSThreshold(fgkSSDZSThresholdDefault),
79 fNsigmas(fgkNsigmasDefault),
80 fNcomps(fgkNcompsDefault),
85 // default constructor
86 SetSPDBiasVoltageAll(fgkSPDBiasVoltageDefault);
87 SetSPDThresholdsAll(fgkSPDThreshDefault,fgkSPDSigmaDefault);
90 SetDistanceOverVoltage();
91 SetSPDCouplingOption(fgkSPDCouplingOptDefault);
92 SetSPDSigmaDiffusionAsymmetry(fgkSPDEccDiffDefault);
94 SetSDDDiffCoeff(fgkSDDDiffCoeffDefault,fgkSDDDiffCoeff1Default);
95 SetSDDMaxAdc((Double_t)fgkSDDMaxAdcDefault);
96 SetSSDCouplings(fgkSSDCouplingPRDefault,fgkSSDCouplingPLDefault,fgkSSDCouplingNRDefault,fgkSSDCouplingNLDefault);
98 //______________________________________________________________________
99 AliITSSimuParam::AliITSSimuParam(const AliITSSimuParam &simpar):
101 fGeVcharge(simpar.fGeVcharge),
102 fDOverV(simpar.fDOverV),
103 //fSPDBiasVoltage(simpar.fSPDBiasVoltage),
104 //fSPDThresh(simpar.fSPDThresh),
105 //fSPDSigma(simpar.fSPDSigma),
106 fSPDCouplOpt(simpar.fSPDCouplOpt),
107 fSPDCouplCol(simpar.fSPDCouplCol),
108 fSPDCouplRow(simpar.fSPDCouplRow),
109 fSPDEccDiff(simpar.fSPDEccDiff),
110 fSPDAddNoisyFlag(simpar.fSPDAddNoisyFlag),
111 fSPDRemoveDeadFlag(simpar.fSPDRemoveDeadFlag),
112 fSDDElectronics(simpar.fSDDElectronics),
113 fSDDDiffCoeff(simpar.fSDDDiffCoeff),
114 fSDDDiffCoeff1(simpar.fSDDDiffCoeff1),
115 fSDDJitterError(simpar.fSDDJitterError),
116 fSDDDynamicRange(simpar.fSDDDynamicRange),
117 fSDDMaxAdc(simpar.fSDDMaxAdc),
118 fSDDChargeLoss(simpar.fSDDChargeLoss),
119 fSSDCouplingPR(simpar.fSSDCouplingPR),
120 fSSDCouplingPL(simpar.fSSDCouplingPL),
121 fSSDCouplingNR(simpar.fSSDCouplingNR),
122 fSSDCouplingNL(simpar.fSSDCouplingNL),
123 fSSDZSThreshold(simpar.fSSDZSThreshold),
124 fNsigmas(simpar.fNsigmas),
125 fNcomps(simpar.fNcomps),
130 for (Int_t i=0;i<240;i++) {
131 fSPDBiasVoltage[i]=simpar.fSPDBiasVoltage[i];
132 fSPDThresh[i]=simpar.fSPDThresh[i];
133 fSPDSigma[i]=simpar.fSPDSigma[i];
134 fSPDNoise[i]=simpar.fSPDNoise[i];
135 fSPDBaseline[i]=simpar.fSPDBaseline[i];
139 //______________________________________________________________________
140 AliITSSimuParam& AliITSSimuParam::operator=(const AliITSSimuParam& source){
141 // Assignment operator.
142 this->~AliITSSimuParam();
143 new(this) AliITSSimuParam(source);
149 //______________________________________________________________________
150 AliITSSimuParam::~AliITSSimuParam() {
152 if(fGaus) delete fGaus;
154 //________________________________________________________________________
155 void AliITSSimuParam::SetNLookUp(Int_t p1){
156 // Set number of sigmas over which cluster disintegration is performed
158 if (fGaus) delete fGaus;
159 fGaus = new TArrayF(fNcomps+1);
160 for(Int_t i=0; i<=fNcomps; i++) {
161 Float_t x = -fNsigmas + (2.*i*fNsigmas)/(fNcomps-1);
162 (*fGaus)[i] = exp(-((x*x)/2));
165 //________________________________________________________________________
166 void AliITSSimuParam::PrintParameters() const{
167 printf("GeVToCharge = %G\n",fGeVcharge);
168 printf("DistanveOverVoltage = %f \n",fDOverV);
170 printf("===== SPD parameters =====\n");
171 printf("Bias Voltage = %f \n",fSPDBiasVoltage[0]);
172 printf("Threshold and sigma = %f %f\n",fSPDThresh[0],fSPDSigma[0]);
173 printf("Coupling Option = %s\n",fSPDCouplOpt.Data());
174 printf("Coupling value (column) = %f\n",fSPDCouplCol);
175 printf("Coupling value (row) = %f\n",fSPDCouplRow);
176 printf("Eccentricity in diffusion = %f\n",fSPDEccDiff);
178 printf("===== SDD parameters =====\n");
179 printf("Electronic chips = %d\n",fSDDElectronics);
180 printf("Diffusion Coefficients = %f %f\n",fSDDDiffCoeff,fSDDDiffCoeff1);
181 printf("Jitter Error = %f um\n",fSDDJitterError);
182 printf("Dynamic Range = %f\n",fSDDDynamicRange);
183 printf("Max. ADC = %f\n",fSDDMaxAdc);
184 printf("Charge Loss = %f\n",fSDDChargeLoss);
186 printf("===== SSD parameters =====\n");
187 printf("Coupling PR = %f\n",fSSDCouplingPR);
188 printf("Coupling PL = %f\n",fSSDCouplingPL);
189 printf("Coupling NR = %f\n",fSSDCouplingNR);
190 printf("Coupling NL = %f\n",fSSDCouplingNL);
191 printf("Zero Supp threshold = %d\n",fSSDZSThreshold);
193 //______________________________________________________________________
194 Double_t AliITSSimuParam::MobilityElectronSiEmp() const {
195 // Computes the electron mobility in cm^2/volt-sec. Taken from SILVACO
196 // International ATLAS II, 2D Device Simulation Framework, User Manual
197 // Chapter 5 Equation 5-6. An empirical function for low-field mobiliity
198 // in silicon at different tempeatures.
204 // The Mobility of electrons in Si at a give temprature and impurity
205 // concentration. [cm^2/Volt-sec]
206 const Double_t km0 = 55.24; // cm^2/Volt-sec
207 const Double_t km1 = 7.12E+08; // cm^2 (degree K)^2.3 / Volt-sec
208 const Double_t kN0 = 1.072E17; // #/cm^3
209 const Double_t kT0 = 300.; // degree K.
210 const Double_t keT0 = -2.3; // Power of Temp.
211 const Double_t keT1 = -3.8; // Power of Temp.
212 const Double_t keN = 0.73; // Power of Dopent Consentrations
214 Double_t tT = fT,nN = fN;
216 if(nN<=0.0){ // Simple case.
217 if(tT==300.) return 1350.0; // From Table 5-1 at consentration 1.0E14.
218 m = km1*TMath::Power(tT,keT0);
221 m = km1*TMath::Power(tT,keT0) - km0;
222 m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN);
226 //______________________________________________________________________
227 Double_t AliITSSimuParam::MobilityHoleSiEmp() const {
228 // Computes the Hole mobility in cm^2/volt-sec. Taken from SILVACO
229 // International ATLAS II, 2D Device Simulation Framework, User Manual
230 // Chapter 5 Equation 5-7 An empirical function for low-field mobiliity
231 // in silicon at different tempeatures.
237 // The Mobility of Hole in Si at a give temprature and impurity
238 // concentration. [cm^2/Volt-sec]
239 const Double_t km0a = 49.74; // cm^2/Volt-sec
240 const Double_t km0b = 49.70; // cm^2/Volt-sec
241 const Double_t km1 = 1.35E+08; // cm^2 (degree K)^2.3 / Volt-sec
242 const Double_t kN0 = 1.606E17; // #/cm^3
243 const Double_t kT0 = 300.; // degree K.
244 const Double_t keT0 = -2.2; // Power of Temp.
245 const Double_t keT1 = -3.7; // Power of Temp.
246 const Double_t keN = 0.70; // Power of Dopent Consentrations
248 Double_t tT = fT,nN = fN;
250 if(nN<=0.0){ // Simple case.
251 if(tT==300.) return 495.0; // From Table 5-1 at consentration 1.0E14.
252 m = km1*TMath::Power(tT,keT0) + km0a-km0b;
255 m = km1*TMath::Power(tT,keT0) - km0b;
256 m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN);
260 //______________________________________________________________________
261 Double_t AliITSSimuParam::DiffusionCoefficientElectron() const {
262 // Computes the Diffusion coefficient for electrons in cm^2/sec. Taken
263 // from SILVACO International ATLAS II, 2D Device Simulation Framework,
264 // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
265 // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
271 // The Diffusion Coefficient of electrons in Si at a give temprature
272 // and impurity concentration. [cm^2/sec]
273 // const Double_t kb = 1.3806503E-23; // Joules/degree K
274 // const Double_t qe = 1.60217646E-19; // Coulumbs.
275 const Double_t kbqe = 8.617342312E-5; // Volt/degree K
276 Double_t m = MobilityElectronSiEmp();
279 return m*kbqe*tT; // [cm^2/sec]
281 //______________________________________________________________________
282 Double_t AliITSSimuParam::DiffusionCoefficientHole() const {
283 // Computes the Diffusion coefficient for Holes in cm^2/sec. Taken
284 // from SILVACO International ATLAS II, 2D Device Simulation Framework,
285 // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
286 // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
292 // The Defusion Coefficient of Hole in Si at a give temprature and
293 // impurity concentration. [cm^2/sec]
294 // and impurity concentration. [cm^2/sec]
295 // const Double_t kb = 1.3806503E-23; // Joules/degree K
296 // const Double_t qe = 1.60217646E-19; // Coulumbs.
297 const Double_t kbqe = 8.617342312E-5; // Volt/degree K
298 Double_t m = MobilityHoleSiEmp();
301 return m*kbqe*tT; // [cm^2/sec]
303 //______________________________________________________________________
304 Double_t AliITSSimuParam::LorentzAngleHole(Double_t B) const {
305 // Computes the Lorentz angle for electrons in Si
306 // Input: magnetic Field in KGauss
307 // Output: Lorentz angle in radians (positive if Bz is positive)
308 // Main Reference: NIM A 497 (2003) 389–396.
309 // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al.
311 const Double_t krH=0.70; // Hall scattering factor for Hole
312 const Double_t kT0 = 300.; // reference Temperature (degree K).
313 const Double_t kmulow0 = 470.5; // cm^2/Volt-sec
314 const Double_t keT0 = -2.5; // Power of Temp.
315 const Double_t beta0 = 1.213; // beta coeff. at T0=300K
316 const Double_t keT1 = 0.17; // Power of Temp. for beta
317 const Double_t kvsat0 = 8.37E+06; // saturated velocity at T0=300K (cm/sec)
318 const Double_t keT2 = 0.52; // Power of Temp. for vsat
320 Double_t eE= 1./fDOverV;
321 Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0);
322 Double_t beta=beta0*TMath::Power(tT/kT0,keT1);
323 Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2);
324 Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta);
325 Double_t angle=TMath::ATan(krH*mu*B*1.E-05); // Conversion Factor
328 //______________________________________________________________________
329 Double_t AliITSSimuParam::LorentzAngleElectron(Double_t B) const {
330 // Computes the Lorentz angle for electrons in Si
331 // Input: magnetic Field in KGauss
332 // Output: Lorentz angle in radians (positive if Bz is positive)
333 // Main Reference: NIM A 497 (2003) 389–396.
334 // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al.
336 const Double_t krH=1.15; // Hall scattering factor for Electron
337 const Double_t kT0 = 300.; // reference Temperature (degree K).
338 const Double_t kmulow0 = 1417.0; // cm^2/Volt-sec
339 const Double_t keT0 = -2.2; // Power of Temp.
340 const Double_t beta0 = 1.109; // beta coeff. at T0=300K
341 const Double_t keT1 = 0.66; // Power of Temp. for beta
342 const Double_t kvsat0 = 1.07E+07; // saturated velocity at T0=300K (cm/sec)
343 const Double_t keT2 = 0.87; // Power of Temp. for vsat
345 Double_t eE= 1./fDOverV;
346 Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0);
347 Double_t beta=beta0*TMath::Power(tT/kT0,keT1);
348 Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2);
349 Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta);
350 Double_t angle=TMath::ATan(krH*mu*B*1.E-05);
353 //______________________________________________________________________
354 Double_t AliITSSimuParam::SpeedElectron() const {
355 // Computes the average speed for electrons in Si under the low-field
356 // approximation. [cm/sec].
362 // The speed the holes are traveling at due to the low field applied.
364 Double_t m = MobilityElectronSiEmp();
366 return m/fDOverV; // [cm/sec]
368 //______________________________________________________________________
369 Double_t AliITSSimuParam::SpeedHole() const {
370 // Computes the average speed for Holes in Si under the low-field
371 // approximation.[cm/sec].
377 // The speed the holes are traveling at due to the low field applied.
379 Double_t m = MobilityHoleSiEmp();
381 return m/fDOverV; // [cm/sec]
383 //______________________________________________________________________
384 Double_t AliITSSimuParam::SigmaDiffusion3D(Double_t l) const {
385 // Returns the Gaussian sigma^2 == <x^2+y^2+z^2> [cm^2] due to the
386 // defusion of electrons or holes through a distance l [cm] caused
387 // by an applied voltage v [volt] through a distance d [cm] in any
388 // material at a temperature T [degree K]. The sigma diffusion when
389 // expressed in terms of the distance over which the diffusion
390 // occures, l=time/speed, is independent of the mobility and therefore
391 // the properties of the material. The charge distributions is given by
392 // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 6Dt where D=mkT/e
393 // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
394 // charge. and vel=m*v/d. consiquently sigma^2=6kTdl/ev.
396 // Double_t l Distance the charge has to travel.
400 // The Sigma due to the diffution of electrons. [cm]
401 const Double_t kcon = 5.17040258E-04; // == 6k/e [J/col or volts]
403 return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm]
405 //______________________________________________________________________
406 Double_t AliITSSimuParam::SigmaDiffusion2D(Double_t l) const {
407 // Returns the Gaussian sigma^2 == <x^2+z^2> [cm^2] due to the defusion
408 // of electrons or holes through a distance l [cm] caused by an applied
409 // voltage v [volt] through a distance d [cm] in any material at a
410 // temperature T [degree K]. The sigma diffusion when expressed in terms
411 // of the distance over which the diffusion occures, l=time/speed, is
412 // independent of the mobility and therefore the properties of the
413 // material. The charge distributions is given by
414 // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <x^2+z^2> = 4Dt where D=mkT/e
415 // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
416 // charge. and vel=m*v/d. consiquently sigma^2=4kTdl/ev.
418 // Double_t l Distance the charge has to travel.
422 // The Sigma due to the diffution of electrons. [cm]
423 const Double_t kcon = 3.446935053E-04; // == 4k/e [J/col or volts]
425 return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm]
427 //______________________________________________________________________
428 Double_t AliITSSimuParam::SigmaDiffusion1D(Double_t l) const {
429 // Returns the Gaussian sigma^2 == <x^2> [cm^2] due to the defusion
430 // of electrons or holes through a distance l [cm] caused by an applied
431 // voltage v [volt] through a distance d [cm] in any material at a
432 // temperature T [degree K]. The sigma diffusion when expressed in terms
433 // of the distance over which the diffusion occures, l=time/speed, is
434 // independent of the mobility and therefore the properties of the
435 // material. The charge distributions is given by
436 // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 2Dt where D=mkT/e
437 // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
438 // charge. and vel=m*v/d. consiquently sigma^2=2kTdl/ev.
440 // Double_t l Distance the charge has to travel.
444 // The Sigma due to the diffution of electrons. [cm]
445 const Double_t kcon = 1.723467527E-04; // == 2k/e [J/col or volts]
447 return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm]
449 //----------------------------------------------------------------------
450 Double_t AliITSSimuParam::DepletedRegionThicknessA(Double_t dopCons,
453 Double_t voltBuiltIn)const{
454 // Computes the thickness of the depleted region in Si due to the
455 // application of an external bias voltage. From the Particle Data
456 // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004)
457 // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
458 // July 15 2004, ISSN 0370-2693 page 263. First equation.
460 // Double_t dopCons "N" doping concentration
461 // Double_t voltage "V" external bias voltage
462 // Double_t elecCharge "e" electronic charge
463 // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for
464 // resistivities typically used in detectors)
468 // The thickness of the depleted region
470 return TMath::Sqrt(2.0*(voltage+voltBuiltIn)/(dopCons*elecCharge));
472 //----------------------------------------------------------------------
473 Double_t AliITSSimuParam::DepletedRegionThicknessB(Double_t resist,
476 Double_t voltBuiltIn,
477 Double_t dielConst)const{
478 // Computes the thickness of the depleted region in Si due to the
479 // application of an external bias voltage. From the Particle Data
480 // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004)
481 // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
482 // July 15 2004, ISSN 0370-2693 page 263. Second Equation.
484 // Double_t resist "rho" resistivity (typically 1-10 kOhm cm)
485 // Double_t voltage "V" external bias voltage
486 // Double_t mobility "mu" charge carrier mobility
487 // (electons 1350, holes 450 cm^2/V/s)
488 // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for
489 // resistivities typically used in detectors)
490 // Double_t dielConst=1.E-12 "epsilon" dielectric constant = 11.9 *
491 // (permittivity of free space) or ~ 1 pF/cm
495 // The thickness of the depleted region
497 return TMath::Sqrt(2.8*resist*mobility*dielConst*(voltage+voltBuiltIn));
499 //----------------------------------------------------------------------
500 Double_t AliITSSimuParam::ReverseBiasCurrent(Double_t temp,
501 Double_t revBiasCurT1,
503 Double_t energy)const{
504 // Computes the temperature dependance of the reverse bias current
505 // of Si detectors. From the Particle Data
506 // Book, 28.8 Silicon semiconductor detectors equation 28.21 (2004)
507 // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
508 // July 15 2004, ISSN 0370-2693 page 263.
510 // Double_t temp The temperature at which the current is wanted
511 // Double_t revBiasCurT1 The reference bias current at temp T1
512 // Double_t tempT1 The temperature correstponding to revBiasCurT1
513 // Double_t energy=1.2 Some energy [eV]
517 // The reverse bias current at the tempeature temp.
518 const Double_t kBoltz = 8.617343E-5; //[eV/K]
520 return revBiasCurT1*(temp*temp/(tempT1*tempT1))*
521 TMath::Exp(-0.5*energy*(tempT1-temp)/(kBoltz*tempT1*temp));
523 //______________________________________________________________________
524 void AliITSSimuParam::SPDThresholds(const Int_t mod, Double_t& thresh, Double_t& sigma) const {
525 if(mod<0 || mod>239) {
530 thresh=fSPDThresh[mod];
531 sigma=fSPDSigma[mod];
534 //_______________________________________________________________________
535 void AliITSSimuParam::SPDNoise(const Int_t mod,Double_t &noise, Double_t &baseline) const {
536 if(mod<0 || mod>239) {
541 noise=fSPDNoise[mod];
542 baseline=fSPDBaseline[mod];