/************************************************************************** * Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. * * * * Author: The ALICE Off-line Project. * * Contributors are mentioned in the code where appropriate. * * * * Permission to use, copy, modify and distribute this software and its * * documentation strictly for non-commercial purposes is hereby granted * * without fee, provided that the above copyright notice appears in all * * copies and that both the copyright notice and this permission notice * * appear in the supporting documentation. The authors make no claims * * about the suitability of this software for any purpose. It is * * provided "as is" without express or implied warranty. * **************************************************************************/ /* $Id$ */ //_________________________________________________________________________ // Geometry class for PHOS : EMCA (Electromagnetic Calorimeter) // Its data members provide geometry parametrization of EMCA // which can be changed in the constructor only. // Author : Yves Schutz (SUBATECH) // Modified : Yuri Kharlov (IHEP, Protvino) // 13 September 2000 // --- AliRoot header files --- #include "AliPHOSEMCAGeometry.h" ClassImp(AliPHOSEMCAGeometry) ; //____________________________________________________________________________ AliPHOSEMCAGeometry::AliPHOSEMCAGeometry() { // Initializes the EMC parameters fNPhi = 64 ; fNZ = 64 ; fXtlSize[0] = 2.2 ; fXtlSize[1] = 22.0 ; fXtlSize[2] = 2.2 ; // all these numbers coming next are subject to changes fOuterBoxThickness[0] = 2.5 ; fOuterBoxThickness[1] = 5.0 ; fOuterBoxThickness[2] = 5.0 ; fUpperPlateThickness = 4.0 ; fSecondUpperPlateThickness = 5.0 ; fCrystalSupportHeight = 6.95 ; fCrystalWrapThickness = 0.01 ; fCrystalHolderThickness = 0.005 ; fModuleBoxThickness = 2.0 ; fIPtoOuterCoverDistance = 447.0 ; fIPtoCrystalSurface = 460.0 ; fPinDiodeSize[0] = 1.71 ; //Values given by Odd Harald feb 2000 fPinDiodeSize[1] = 0.0280 ; // 0.0280 is the depth of active layer in the silicon fPinDiodeSize[2] = 1.61 ; fUpperCoolingPlateThickness = 0.06 ; fSupportPlateThickness = 10.0 ; fLowerThermoPlateThickness = 3.0 ; fLowerTextolitPlateThickness = 1.0 ; fGapBetweenCrystals = 0.03 ; fTextolitBoxThickness[0] = 1.5 ; fTextolitBoxThickness[1] = 0.0 ; fTextolitBoxThickness[2] = 3.0 ; fAirThickness[0] = 0.4 ; fAirThickness[1] = 20.5175 ; fAirThickness[2] = 2.48 ; Float_t xtalModulePhiSize = fNPhi * ( fXtlSize[0] + 2 * fGapBetweenCrystals ) ; Float_t xtalModuleZSize = fNZ * ( fXtlSize[2] + 2 * fGapBetweenCrystals ) ; // The next dimensions are calculated from the above parameters fOuterBoxSize[0] = xtalModulePhiSize + 2 * ( fAirThickness[0] + fModuleBoxThickness + fTextolitBoxThickness[0] + fOuterBoxThickness[0] ) ; fOuterBoxSize[1] = ( fXtlSize[1] + fCrystalSupportHeight + fCrystalWrapThickness + fCrystalHolderThickness ) + 2 * (fAirThickness[1] + fModuleBoxThickness + fTextolitBoxThickness[1] + fOuterBoxThickness[1] ) ; fOuterBoxSize[2] = xtalModuleZSize + 2 * ( fAirThickness[2] + fModuleBoxThickness + fTextolitBoxThickness[2] + fOuterBoxThickness[2] ) ; fTextolitBoxSize[0] = fOuterBoxSize[0] - 2 * fOuterBoxThickness[0] ; fTextolitBoxSize[1] = fOuterBoxSize[1] - fOuterBoxThickness[1] - fUpperPlateThickness ; fTextolitBoxSize[2] = fOuterBoxSize[2] - 2 * fOuterBoxThickness[2] ; fAirFilledBoxSize[0] = fTextolitBoxSize[0] - 2 * fTextolitBoxThickness[0] ; fAirFilledBoxSize[1] = fTextolitBoxSize[1] - fSecondUpperPlateThickness ; fAirFilledBoxSize[2] = fTextolitBoxSize[2] - 2 * fTextolitBoxThickness[2] ; fRotMatrixArray = 0; } //____________________________________________________________________________