/************************************************************************** * Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. * * * * Author: The ALICE Off-line Project. * * Contributors are mentioned in the code where appropriate. * * * * Permission to use, copy, modify and distribute this software and its * * documentation strictly for non-commercial purposes is hereby granted * * without fee, provided that the above copyright notice appears in all * * copies and that both the copyright notice and this permission notice * * appear in the supporting documentation. The authors make no claims * * about the suitability of this software for any purpose. It is * * provided "as is" without express or implied warranty. * **************************************************************************/ /* $Id$ */ //_________________________________________________________________________ // Implementation version v0 of PHOS Manager class // Layout EMC + PPSD has name GPS2 // The main goal of this version of AliPHOS is to calculte the // induced charged in the PIN diode, taking into account light // tracking in the PbWO4 crystal, induced signal in the // PIN due to MIPS particle and electronic noise. // This is done in the StepManager // //*-- Author: Odd Harald Oddland & Gines Martinez (SUBATECH) // --- ROOT system --- #include "TRandom.h" // --- Standard library --- #include #include #include #include // --- AliRoot header files --- #include "AliPHOSv1.h" #include "AliPHOSHit.h" #include "AliPHOSDigit.h" #include "AliRun.h" #include "AliConst.h" ClassImp(AliPHOSv1) //____________________________________________________________________________ AliPHOSv1::AliPHOSv1(const char *name, const char *title): AliPHOSv0(name,title) { // ctor // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using // following formula // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency * // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) * // RecalibrationFactor ; // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko // PINEfficiency is 0.1875 from Odd Harald Odland work // k_0 is 0.0045 from Valery Antonenko fLightYieldMean = 700000. ; fIntrinsicPINEfficiency = 0.1875 ; fLightYieldAttenuation = 0.0045 ; fRecalibrationFactor = 6.2 / fLightYieldMean ; fElectronsPerGeV = 2.77e+8 ; } //____________________________________________________________________________ AliPHOSv1::AliPHOSv1(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title): AliPHOSv0(Reconstructioner,name,title) { // ctor // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using // following formula // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency * // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) * // RecalibrationFactor ; // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko // PINEfficiency is 0.1875 from Odd Harald Odland work // k_0 is 0.0045 from Valery Antonenko fLightYieldMean = 700000.; fIntrinsicPINEfficiency = 0.1875 ; fLightYieldAttenuation = 0.0045 ; fRecalibrationFactor = 6.2 / fLightYieldMean ; fElectronsPerGeV = 2.77e+8 ; } //____________________________________________________________________________ void AliPHOSv1::StepManager(void) { // Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell // Adds the energy deposited in the PIN diode Int_t relid[4] ; // (box, layer, row, column) indices Float_t xyze[4] ; // position wrt MRS and energy deposited TLorentzVector pos ; Int_t copy; Float_t lightyield ; // Light Yield per GeV Float_t nElectrons ; // Number of electrons in the PIN diode TString name = fGeom->GetName() ; Float_t global[3] ; Float_t local[3] ; Float_t lostenergy ; Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() ); if ( name == "GPS2" ) { // the CPV is a PPSD if( gMC->CurrentVolID(copy) == gMC->VolId("GCEL") ) // We are inside a gas cell { gMC->TrackPosition(pos) ; xyze[0] = pos[0] ; xyze[1] = pos[1] ; xyze[2] = pos[2] ; xyze[3] = gMC->Edep() ; if ( xyze[3] != 0 ) { // there is deposited energy gMC->CurrentVolOffID(5, relid[0]) ; // get the PHOS Module number gMC->CurrentVolOffID(3, relid[1]) ; // get the Micromegas Module number // 1-> Geom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() upper // > fGeom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() lower gMC->CurrentVolOffID(1, relid[2]) ; // get the row number of the cell gMC->CurrentVolID(relid[3]) ; // get the column number // get the absolute Id number Int_t absid ; fGeom->RelToAbsNumbering(relid,absid) ; AddHit(primary, absid, xyze ); } // there is deposited energy } // We are inside the gas of the CPV } // GPS2 configuration if(gMC->CurrentVolID(copy) == gMC->VolId("PXTL") )// We are inside a PBWO crystal { gMC->TrackPosition(pos) ; xyze[0] = pos[0] ; xyze[1] = pos[1] ; xyze[2] = pos[2] ; lostenergy = gMC->Edep() ; xyze[3] = gMC->Edep() ; global[0] = pos[0] ; global[1] = pos[1] ; global[2] = pos[2] ; if ( xyze[3] != 0 ) { gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ; relid[1] = 0 ; // means PW04 gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module // get the absolute Id number Int_t absid ; fGeom->RelToAbsNumbering(relid,absid) ; gMC->Gmtod(global, local, 1) ; // calculating number of electrons in the PIN diode asociated to this hit lightyield = gRandom->Poisson(fLightYieldMean) ; nElectrons = lostenergy * lightyield * fIntrinsicPINEfficiency * exp(-fLightYieldAttenuation * (local[1]+fGeom->GetCrystalSize(1)/2.0 ) ) ; xyze[3] = nElectrons * fRecalibrationFactor ; // add current hit to the hit list AddHit(primary, absid, xyze); } // there is deposited energy } // we are inside a PHOS Xtal if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN") ) // We are inside de PIN diode { gMC->TrackPosition(pos) ; xyze[0] = pos[0] ; xyze[1] = pos[1] ; xyze[2] = pos[2] ; lostenergy = gMC->Edep() ; xyze[3] = gMC->Edep() ; if ( xyze[3] != 0 ) { gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ; relid[1] = 0 ; // means PW04 and PIN gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module // get the absolute Id number Int_t absid ; fGeom->RelToAbsNumbering(relid,absid) ; // calculating number of electrons in the PIN diode asociated to this hit nElectrons = lostenergy * fElectronsPerGeV ; xyze[3] = nElectrons * fRecalibrationFactor ; // add current hit to the hit list AddHit(primary, absid, xyze); //printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]); //printf("Lost energy in the PIN is %f \n",lostenergy) ; } // there is deposited energy } // we are inside a PHOS XtalPHOS PIN diode }