* provided "as is" without express or implied warranty. *
**************************************************************************/
-/* $Id:$ */
+/* $Id$ */
//////////////////////////////////////////////////////
// Calibration class for set:ITS //
AliITSCalibration::AliITSCalibration():
TObject(),
fDataType(),
-fdv(0.000375),
-fN(0.),
-fT(300.),
-fGeVcharge(0.),
-fResponse(){
+fT(300.)
+{
// Default Constructor (300 microns and 80 volts)
- SetGeVToCharge();
- fResponse = 0;
-}
-//______________________________________________________________________
-AliITSCalibration::AliITSCalibration(Double_t thickness):
-TObject(),
-fDataType(),
-fdv(0.),
-fN(0.),
-fT(300.),
-fGeVcharge(0.),
-fResponse(){
- // Default Constructor
-
- fdv = thickness/80.0; // 80 volts.
- SetGeVToCharge();
- fResponse = 0;
}
//______________________________________________________________________
AliITSCalibration::AliITSCalibration(const AliITSCalibration &ob):
TObject(ob),
fDataType(ob.fDataType),
-fdv(ob.fdv),
-fN(ob.fN),
-fT(ob.fT),
-fGeVcharge(ob.fGeVcharge),
-fResponse(ob.fResponse)
-{
- // Copy constructor
+fT(ob.fT)
-}
-/*
-//______________________________________________________________________________
-AliITSCalibration& AliITSCalibration::operator= (const AliITSCalibration& source)
{
- // Asignment operator
-
- this->~AliITSCalibration();
- new(this) AliITSCalibration(source);
- return *this;
-
-
-}
-*/
-//______________________________________________________________________
-Double_t AliITSCalibration::MobilityElectronSiEmp() const {
- // Computes the electron mobility in cm^2/volt-sec. Taken from SILVACO
- // International ATLAS II, 2D Device Simulation Framework, User Manual
- // Chapter 5 Equation 5-6. An empirical function for low-field mobiliity
- // in silicon at different tempeatures.
- // Inputs:
- // none.
- // Output:
- // none.
- // Return:
- // The Mobility of electrons in Si at a give temprature and impurity
- // concentration. [cm^2/Volt-sec]
- const Double_t km0 = 55.24; // cm^2/Volt-sec
- const Double_t km1 = 7.12E+08; // cm^2 (degree K)^2.3 / Volt-sec
- const Double_t kN0 = 1.072E17; // #/cm^3
- const Double_t kT0 = 300.; // degree K.
- const Double_t keT0 = -2.3; // Power of Temp.
- const Double_t keT1 = -3.8; // Power of Temp.
- const Double_t keN = 0.73; // Power of Dopent Consentrations
- Double_t m;
- Double_t tT = fT,nN = fN;
-
- if(nN<=0.0){ // Simple case.
- if(tT==300.) return 1350.0; // From Table 5-1 at consentration 1.0E14.
- m = km1*TMath::Power(tT,keT0);
- return m;
- } // if nN<=0.0
- m = km1*TMath::Power(tT,keT0) - km0;
- m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN);
- m += km0;
- return m;
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::MobilityHoleSiEmp() const {
- // Computes the Hole mobility in cm^2/volt-sec. Taken from SILVACO
- // International ATLAS II, 2D Device Simulation Framework, User Manual
- // Chapter 5 Equation 5-7 An empirical function for low-field mobiliity
- // in silicon at different tempeatures.
- // Inputs:
- // none.
- // Output:
- // none.
- // Return:
- // The Mobility of Hole in Si at a give temprature and impurity
- // concentration. [cm^2/Volt-sec]
- const Double_t km0a = 49.74; // cm^2/Volt-sec
- const Double_t km0b = 49.70; // cm^2/Volt-sec
- const Double_t km1 = 1.35E+08; // cm^2 (degree K)^2.3 / Volt-sec
- const Double_t kN0 = 1.606E17; // #/cm^3
- const Double_t kT0 = 300.; // degree K.
- const Double_t keT0 = -2.2; // Power of Temp.
- const Double_t keT1 = -3.7; // Power of Temp.
- const Double_t keN = 0.70; // Power of Dopent Consentrations
- Double_t m;
- Double_t tT = fT,nN = fN;
-
- if(nN<=0.0){ // Simple case.
- if(tT==300.) return 495.0; // From Table 5-1 at consentration 1.0E14.
- m = km1*TMath::Power(tT,keT0) + km0a-km0b;
- return m;
- } // if nN<=0.0
- m = km1*TMath::Power(tT,keT0) - km0b;
- m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN);
- m += km0a;
- return m;
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::DiffusionCoefficientElectron() const {
- // Computes the Diffusion coefficient for electrons in cm^2/sec. Taken
- // from SILVACO International ATLAS II, 2D Device Simulation Framework,
- // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
- // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
- // Inputs:
- // none.
- // Output:
- // none.
- // Return:
- // The Diffusion Coefficient of electrons in Si at a give temprature
- // and impurity concentration. [cm^2/sec]
- // const Double_t kb = 1.3806503E-23; // Joules/degree K
- // const Double_t qe = 1.60217646E-19; // Coulumbs.
- const Double_t kbqe = 8.617342312E-5; // Volt/degree K
- Double_t m = MobilityElectronSiEmp();
- Double_t tT = fT;
-
- return m*kbqe*tT; // [cm^2/sec]
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::DiffusionCoefficientHole() const {
- // Computes the Diffusion coefficient for Holes in cm^2/sec. Taken
- // from SILVACO International ATLAS II, 2D Device Simulation Framework,
- // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
- // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
- // Inputs:
- // none.
- // Output:
- // none.
- // Return:
- // The Defusion Coefficient of Hole in Si at a give temprature and
- // impurity concentration. [cm^2/sec]
- // and impurity concentration. [cm^2/sec]
- // const Double_t kb = 1.3806503E-23; // Joules/degree K
- // const Double_t qe = 1.60217646E-19; // Coulumbs.
- const Double_t kbqe = 8.617342312E-5; // Volt/degree K
- Double_t m = MobilityHoleSiEmp();
- Double_t tT = fT;
-
- return m*kbqe*tT; // [cm^2/sec]
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::LorentzAngleHole(Double_t B) const {
- // Computes the Lorentz angle for electrons in Si
- // Input: magnetic Field in KGauss
- // Output: Lorentz angle in radians (positive if Bz is positive)
- // Main Reference: NIM A 497 (2003) 389–396.
- // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al.
- //
- const Double_t krH=0.70; // Hall scattering factor for Hole
- const Double_t kT0 = 300.; // reference Temperature (degree K).
- const Double_t kmulow0 = 470.5; // cm^2/Volt-sec
- const Double_t keT0 = -2.5; // Power of Temp.
- const Double_t beta0 = 1.213; // beta coeff. at T0=300K
- const Double_t keT1 = 0.17; // Power of Temp. for beta
- const Double_t kvsat0 = 8.37E+06; // saturated velocity at T0=300K (cm/sec)
- const Double_t keT2 = 0.52; // Power of Temp. for vsat
- Double_t tT = fT;
- Double_t eE= 1./fdv;
- Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0);
- Double_t beta=beta0*TMath::Power(tT/kT0,keT1);
- Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2);
- Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta);
- Double_t angle=TMath::ATan(krH*mu*B*1.E-05); // Conversion Factor
- return angle;
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::LorentzAngleElectron(Double_t B) const {
- // Computes the Lorentz angle for electrons in Si
- // Input: magnetic Field in KGauss
- // Output: Lorentz angle in radians (positive if Bz is positive)
- // Main Reference: NIM A 497 (2003) 389–396.
- // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al.
- //
- const Double_t krH=1.15; // Hall scattering factor for Electron
- const Double_t kT0 = 300.; // reference Temperature (degree K).
- const Double_t kmulow0 = 1417.0; // cm^2/Volt-sec
- const Double_t keT0 = -2.2; // Power of Temp.
- const Double_t beta0 = 1.109; // beta coeff. at T0=300K
- const Double_t keT1 = 0.66; // Power of Temp. for beta
- const Double_t kvsat0 = 1.07E+07; // saturated velocity at T0=300K (cm/sec)
- const Double_t keT2 = 0.87; // Power of Temp. for vsat
- Double_t tT = fT;
- Double_t eE= 1./fdv;
- Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0);
- Double_t beta=beta0*TMath::Power(tT/kT0,keT1);
- Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2);
- Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta);
- Double_t angle=TMath::ATan(krH*mu*B*1.E-05);
- return angle;
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::SpeedElectron() const {
- // Computes the average speed for electrons in Si under the low-field
- // approximation. [cm/sec].
- // Inputs:
- // none.
- // Output:
- // none.
- // Return:
- // The speed the holes are traveling at due to the low field applied.
- // [cm/sec]
- Double_t m = MobilityElectronSiEmp();
-
- return m/fdv; // [cm/sec]
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::SpeedHole() const {
- // Computes the average speed for Holes in Si under the low-field
- // approximation.[cm/sec].
- // Inputs:
- // none.
- // Output:
- // none.
- // Return:
- // The speed the holes are traveling at due to the low field applied.
- // [cm/sec]
- Double_t m = MobilityHoleSiEmp();
-
- return m/fdv; // [cm/sec]
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::SigmaDiffusion3D(Double_t l) const {
- // Returns the Gaussian sigma^2 == <x^2+y^2+z^2> [cm^2] due to the
- // defusion of electrons or holes through a distance l [cm] caused
- // by an applied voltage v [volt] through a distance d [cm] in any
- // material at a temperature T [degree K]. The sigma diffusion when
- // expressed in terms of the distance over which the diffusion
- // occures, l=time/speed, is independent of the mobility and therefore
- // the properties of the material. The charge distributions is given by
- // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 6Dt where D=mkT/e
- // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
- // charge. and vel=m*v/d. consiquently sigma^2=6kTdl/ev.
- // Inputs:
- // Double_t l Distance the charge has to travel.
- // Output:
- // none.
- // Return:
- // The Sigma due to the diffution of electrons. [cm]
- const Double_t kcon = 5.17040258E-04; // == 6k/e [J/col or volts]
-
- return TMath::Sqrt(kcon*fT*fdv*l); // [cm]
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::SigmaDiffusion2D(Double_t l) const {
- // Returns the Gaussian sigma^2 == <x^2+z^2> [cm^2] due to the defusion
- // of electrons or holes through a distance l [cm] caused by an applied
- // voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K]. The sigma diffusion when expressed in terms
- // of the distance over which the diffusion occures, l=time/speed, is
- // independent of the mobility and therefore the properties of the
- // material. The charge distributions is given by
- // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <x^2+z^2> = 4Dt where D=mkT/e
- // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
- // charge. and vel=m*v/d. consiquently sigma^2=4kTdl/ev.
- // Inputs:
- // Double_t l Distance the charge has to travel.
- // Output:
- // none.
- // Return:
- // The Sigma due to the diffution of electrons. [cm]
- const Double_t kcon = 3.446935053E-04; // == 4k/e [J/col or volts]
-
- return TMath::Sqrt(kcon*fT*fdv*l); // [cm]
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::SigmaDiffusion1D(Double_t l) const {
- // Returns the Gaussian sigma^2 == <x^2> [cm^2] due to the defusion
- // of electrons or holes through a distance l [cm] caused by an applied
- // voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K]. The sigma diffusion when expressed in terms
- // of the distance over which the diffusion occures, l=time/speed, is
- // independent of the mobility and therefore the properties of the
- // material. The charge distributions is given by
- // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 2Dt where D=mkT/e
- // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
- // charge. and vel=m*v/d. consiquently sigma^2=2kTdl/ev.
- // Inputs:
- // Double_t l Distance the charge has to travel.
- // Output:
- // none.
- // Return:
- // The Sigma due to the diffution of electrons. [cm]
- const Double_t kcon = 1.723467527E-04; // == 2k/e [J/col or volts]
-
- return TMath::Sqrt(kcon*fT*fdv*l); // [cm]
-}
-//----------------------------------------------------------------------
-Double_t AliITSCalibration::DepletedRegionThicknessA(Double_t dopCons,
- Double_t voltage,
- Double_t elecCharge,
- Double_t voltBuiltIn)const{
- // Computes the thickness of the depleted region in Si due to the
- // application of an external bias voltage. From the Particle Data
- // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004)
- // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
- // July 15 2004, ISSN 0370-2693 page 263. First equation.
- // Inputs:
- // Double_t dopCons "N" doping concentration
- // Double_t voltage "V" external bias voltage
- // Double_t elecCharge "e" electronic charge
- // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for
- // resistivities typically used in detectors)
- // Output:
- // none.
- // Return:
- // The thickness of the depleted region
-
- return TMath::Sqrt(2.0*(voltage+voltBuiltIn)/(dopCons*elecCharge));
-}
-//----------------------------------------------------------------------
-Double_t AliITSCalibration::DepletedRegionThicknessB(Double_t resist,
- Double_t voltage,
- Double_t mobility,
- Double_t voltBuiltIn,
- Double_t dielConst)const{
- // Computes the thickness of the depleted region in Si due to the
- // application of an external bias voltage. From the Particle Data
- // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004)
- // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
- // July 15 2004, ISSN 0370-2693 page 263. Second Equation.
- // Inputs:
- // Double_t resist "rho" resistivity (typically 1-10 kOhm cm)
- // Double_t voltage "V" external bias voltage
- // Double_t mobility "mu" charge carrier mobility
- // (electons 1350, holes 450 cm^2/V/s)
- // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for
- // resistivities typically used in detectors)
- // Double_t dielConst=1.E-12 "epsilon" dielectric constant = 11.9 *
- // (permittivity of free space) or ~ 1 pF/cm
- // Output:
- // none.
- // Return:
- // The thickness of the depleted region
-
- return TMath::Sqrt(2.8*resist*mobility*dielConst*(voltage+voltBuiltIn));
-}
-//----------------------------------------------------------------------
-Double_t AliITSCalibration::ReverseBiasCurrent(Double_t temp,
- Double_t revBiasCurT1,
- Double_t tempT1,
- Double_t energy)const{
- // Computes the temperature dependance of the reverse bias current
- // of Si detectors. From the Particle Data
- // Book, 28.8 Silicon semiconductor detectors equation 28.21 (2004)
- // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
- // July 15 2004, ISSN 0370-2693 page 263.
- // Inputs:
- // Double_t temp The temperature at which the current is wanted
- // Double_t revBiasCurT1 The reference bias current at temp T1
- // Double_t tempT1 The temperature correstponding to revBiasCurT1
- // Double_t energy=1.2 Some energy [eV]
- // Output:
- // none.
- // Return:
- // The reverse bias current at the tempeature temp.
- const Double_t kBoltz = 8.617343E-5; //[eV/K]
+ // Copy constructor
- return revBiasCurT1*(temp*temp/(tempT1*tempT1))*
- TMath::Exp(-0.5*energy*(tempT1-temp)/(kBoltz*tempT1*temp));
}
//----------------------------------------------------------------------
void AliITSCalibration::Print(ostream *os) const {
// Standard output format for this class.
// Inputs:
- *os << fdv << " " << fN << " " << fT << " ";
- *os << fGeVcharge;
+ *os << fT << " ";
// printf("%-10.6e %-10.6e %-10.6e %-10.6e \n",fdv,fN,fT,fGeVcharge);
return;
}
// Return:
// none.
- *is >> fdv >> fN >> fT >> fGeVcharge;
+ *is >> fT;
return;
}
//----------------------------------------------------------------------
git://git.uio.no / u / mrichter / AliRoot.git / blobdiff