public:
// Default Constructor
AliITSCalibration();
- // Standard Constructor
- AliITSCalibration(Double_t Thickness);
// Destructor.
virtual ~AliITSCalibration() {;}
//
// Configuration methods
//
- // fGeVcharge is set by default 3.6e-9 GeV See for ex. PDG 2004.
- virtual void SetGeVToCharge(Double_t gc=3.6e-9){fGeVcharge = gc;}
- // Returns the value fGeVcharge
- virtual Double_t GetGeVToCharge() const {return fGeVcharge;}
- // Converts deposited energy to number of electrons liberated
- virtual Double_t GeVToCharge(Double_t gev) const {return gev/fGeVcharge;}
// Temperature in [degree K]
virtual void SetTemperature(Double_t t=300.0) {fT = t;}
// Get temperature [degree K]
virtual Double_t Temperature() const {return fT;}
- // Set the impurity concentrations in [#/cm^3]
- virtual void SetImpurity(Double_t n=0.0){fN = n;}
- // Returns the impurity consentration in [#/cm^3]
- virtual Double_t Impurity() const {return fN;}
- // Sets the applied ratio distance/voltage [cm/volt]
- virtual void SetDistanceOverVoltage(Double_t d,Double_t v){fdv = d/v;}
- // Sets the applied ration distance/voltage [cm/volt]. Default value
- // is 300E-4cm/80 volts = 0.000375 cm/volts
- virtual void SetDistanceOverVoltage(Double_t dv=0.000375){fdv = dv;}
- // Returns the ration distance/voltage
- virtual Double_t DistanceOverVoltage() const {return fdv;}
// Get data type
virtual const char *DataType() const {return fDataType.Data();}
virtual void SetMapA(Int_t, AliITSMapSDD*) {AliError("This method must be implemented in a derived class");}
virtual void SetMapT(Int_t, AliITSMapSDD*) {AliError("This method must be implemented in a derived class");}
virtual void SetDriftSpeed(Int_t, AliITSDriftSpeedArraySDD*) {AliError("This method must be implemented in a derived class");}
- virtual Double_t DriftSpeed() const {return SpeedElectron();};
// Set sigmas of the charge spread function
virtual void SetSigmaSpread(Double_t, Double_t) = 0;
// Get sigmas for the charge spread
virtual void SigmaSpread(Double_t &,Double_t &) const = 0;
- // Pulse height from scored quantity (eloss)
- virtual Double_t IntPH(Double_t) const {return 0.;}
- // Charge disintegration
- virtual Double_t IntXZ(AliITSsegmentation *) const {return 0.;}
- // Electron mobility in Si. [cm^2/(Volt Sec)]. T in degree K, N in #/cm^3
- virtual Double_t MobilityElectronSiEmp() const ;
- // Hole mobility in Si. [cm^2/(Volt Sec)] T in degree K, N in #/cm^3
- virtual Double_t MobilityHoleSiEmp() const ;
- // Einstein relation for Diffusion Coefficient of Electrons. [cm^2/sec]
- // T in degree K, N in #/cm^3
- virtual Double_t DiffusionCoefficientElectron() const ;
- // Einstein relation for Diffusion Coefficient of Holes. [cm^2/sec]
- // T in [degree K], N in [#/cm^3]
- virtual Double_t DiffusionCoefficientHole() const ;
- // Electron <speed> under an applied electric field E=Volts/cm. [cm/sec]
- // d distance-thickness in [cm], v in [volts], T in [degree K],
- // N in [#/cm^3]
- virtual Double_t SpeedElectron() const ;
- // Holes <speed> under an applied electric field E=Volts/cm. [cm/sec]
- // d distance-thickness in [cm], v in [volts], T in [degree K],
- // N in [#/cm^3]
- virtual Double_t SpeedHole() const ;
- // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
- // electrons or holes through a distance l [cm] caused by an applied
- // voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion3D(Double_t l) const;
- // Returns the Gaussian sigma == <x^2 +y^2+z^2> [cm^2] due to the
- // defusion of electrons or holes through a distance l [cm] caused by an
- // applied voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion2D(Double_t l) const;
- // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
- // electrons or holes through a distance l [cm] caused by an applied
- // voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion1D(Double_t l) const;
- // Computes the Lorentz angle for Electron and Hole, under the Magnetic field bz (in kGauss)
- virtual Double_t LorentzAngleElectron(Double_t bz) const;
- virtual Double_t LorentzAngleHole(Double_t bz) const;
- // Compute the thickness of the depleted region in a Si detector, version A
- virtual Double_t DepletedRegionThicknessA(Double_t dopCons,
- Double_t voltage,
- Double_t elecCharge,
- Double_t voltBuiltIn=0.5)const;
- // Compute the thickness of the depleted region in a Si detector, version B
- virtual Double_t DepletedRegionThicknessB(Double_t resist,Double_t voltage,
- Double_t mobility,
- Double_t voltBuiltIn=0.5,
- Double_t dielConst=1.E-12)const;
- // Computes the temperature dependance of the reverse bias current
- virtual Double_t ReverseBiasCurrent(Double_t temp,Double_t revBiasCurT1,
- Double_t tempT1,Double_t energy=1.2)const;
+
+
+
// Prints out the content of this class in ASCII format.
virtual void Print(ostream *os) const;
// Reads in the content of this class in the format of Print
TString fDataType; // data type - real or simulated
- Double_t fdv; // The parameter d/v where d is the disance over which the
- // the potential v is applied d/v [cm/volts]
- Double_t fN; // the impurity consentration of the material in #/cm^3
Float_t fT; // The temperature of the Si in Degree K.
- Double_t fGeVcharge; // Energy to ionize (free an electron) in GeV
AliITSresponse* fResponse; //! ptr to base response obj. It is not
// deleted here but in AliITSDetTypeSim and AliITSDetTypeRec
- ClassDef(AliITSCalibration,1) // Detector type response virtual base class
+ ClassDef(AliITSCalibration,2) // Detector type response virtual base class
};
// Input and output function for standard C++ input/output.
ostream& operator<<(ostream &os,AliITSCalibration &source);
git://git.uio.no / u / mrichter / AliRoot.git / blobdiff