/* Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
* See cxx source for full Copyright notice */
+/* $Id$ */
+
//////////////////////////////////////////////
// Base ITS calibration class //
//////////////////////////////////////////////
#include <TObject.h>
#include <TString.h>
-#include "AliITSresponse.h"
+#include "AliLog.h"
+#include "AliITSCorrMapSDD.h"
+#include "AliITSDriftSpeedArraySDD.h"
class AliITSsegmentation;
class TF1;
class AliITSgeom;
+using std::istream;
/////////////////////////////////////////////
// //
public:
// Default Constructor
AliITSCalibration();
- // Standard Constructor
- AliITSCalibration(Double_t Thickness);
// Destructor.
virtual ~AliITSCalibration() {;}
+
+ // Check for dead modules anche chips
+ // Return 1 if the module/chip is dead, 0 if it is ok
+ virtual Bool_t IsBad() const {AliError("This method must be implemented in a derived class"); return kFALSE;}
+ virtual Bool_t IsChipBad(Int_t) const {AliError("This method must be implemented in a derived class"); return kFALSE;}
+ virtual Bool_t IsWingBad(Int_t) const {AliError("This method must be implemented in a derived class"); return kFALSE;}
//
// Configuration methods
//
- // fGeVcharge is set by default 3.6e-9 GeV See for ex. PDG 2004.
- virtual void SetGeVToCharge(Double_t gc=3.6e-9){fGeVcharge = gc;}
- // Returns the value fGeVcharge
- virtual Double_t GetGeVToCharge() const {return fGeVcharge;}
- // Converts deposited energy to number of electrons liberated
- virtual Double_t GeVToCharge(Double_t gev) const {return gev/fGeVcharge;}
// Temperature in [degree K]
virtual void SetTemperature(Double_t t=300.0) {fT = t;}
// Get temperature [degree K]
virtual Double_t Temperature() const {return fT;}
- // Set the impurity concentrations in [#/cm^3]
- virtual void SetImpurity(Double_t n=0.0){fN = n;}
- // Returns the impurity consentration in [#/cm^3]
- virtual Double_t Impurity() const {return fN;}
- // Sets the applied ratio distance/voltage [cm/volt]
- virtual void SetDistanceOverVoltage(Double_t d,Double_t v){fdv = d/v;}
- // Sets the applied ration distance/voltage [cm/volt]. Default value
- // is 300E-4cm/80 volts = 0.000375 cm/volts
- virtual void SetDistanceOverVoltage(Double_t dv=0.000375){fdv = dv;}
- // Returns the ration distance/voltage
- virtual Double_t DistanceOverVoltage() const {return fdv;}
// Get data type
virtual const char *DataType() const {return fDataType.Data();}
// Type of data - real or simulated
virtual void SetDataType(const char *data="simulated") {fDataType=data;}
- // Set parameters options: "same" or read from "file" or "SetInvalid" or...
- // virtual void SetParamOptions(const char*,const char*) = 0;
- // Set noise parameters
- virtual void SetNoiseParam(Double_t, Double_t) = 0;
// Number of parameters to be set
virtual void SetNDetParam(Int_t) = 0;
// Set detector parameters: gain, coupling ...
virtual void SetDetParam(Double_t *) = 0;
- // Parameters options
- // virtual void ParamOptions(char *,char*) const = 0;
virtual Int_t NDetParam() const = 0;
virtual void GetDetParam(Double_t *) const = 0;
- virtual void GetNoiseParam(Double_t&, Double_t&) const = 0;
- virtual void SetThresholds(Double_t, Double_t) = 0;
- virtual void Thresholds(Double_t &, Double_t &) const = 0;
- virtual Double_t DriftSpeed() const {return SpeedElectron();};
+ virtual void SetMapA(Int_t, AliITSCorrMapSDD*) {AliError("This method must be implemented in a derived class");}
+ virtual void SetMapT(Int_t, AliITSCorrMapSDD*) {AliError("This method must be implemented in a derived class");}
+ virtual void SetDriftSpeed(Int_t, AliITSDriftSpeedArraySDD*) {AliError("This method must be implemented in a derived class");}
// Set sigmas of the charge spread function
virtual void SetSigmaSpread(Double_t, Double_t) = 0;
// Get sigmas for the charge spread
virtual void SigmaSpread(Double_t &,Double_t &) const = 0;
- // Pulse height from scored quantity (eloss)
- virtual Double_t IntPH(Double_t) const {return 0.;}
- // Charge disintegration
- virtual Double_t IntXZ(AliITSsegmentation *) const {return 0.;}
- // Electron mobility in Si. [cm^2/(Volt Sec)]. T in degree K, N in #/cm^3
- virtual Double_t MobilityElectronSiEmp() const ;
- // Hole mobility in Si. [cm^2/(Volt Sec)] T in degree K, N in #/cm^3
- virtual Double_t MobilityHoleSiEmp() const ;
- // Einstein relation for Diffusion Coefficient of Electrons. [cm^2/sec]
- // T in degree K, N in #/cm^3
- virtual Double_t DiffusionCoefficientElectron() const ;
- // Einstein relation for Diffusion Coefficient of Holes. [cm^2/sec]
- // T in [degree K], N in [#/cm^3]
- virtual Double_t DiffusionCoefficientHole() const ;
- // Electron <speed> under an applied electric field E=Volts/cm. [cm/sec]
- // d distance-thickness in [cm], v in [volts], T in [degree K],
- // N in [#/cm^3]
- virtual Double_t SpeedElectron() const ;
- // Holes <speed> under an applied electric field E=Volts/cm. [cm/sec]
- // d distance-thickness in [cm], v in [volts], T in [degree K],
- // N in [#/cm^3]
- virtual Double_t SpeedHole() const ;
- // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
- // electrons or holes through a distance l [cm] caused by an applied
- // voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion3D(Double_t l) const;
- // Returns the Gaussian sigma == <x^2 +y^2+z^2> [cm^2] due to the
- // defusion of electrons or holes through a distance l [cm] caused by an
- // applied voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion2D(Double_t l) const;
- // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
- // electrons or holes through a distance l [cm] caused by an applied
- // voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion1D(Double_t l) const;
- // Compute the thickness of the depleted region in a Si detector, version A
- virtual Double_t DepletedRegionThicknessA(Double_t dopCons,
- Double_t voltage,
- Double_t elecCharge,
- Double_t voltBuiltIn=0.5)const;
- // Compute the thickness of the depleted region in a Si detector, version B
- virtual Double_t DepletedRegionThicknessB(Double_t resist,Double_t voltage,
- Double_t mobility,
- Double_t voltBuiltIn=0.5,
- Double_t dielConst=1.E-12)const;
- // Computes the temperature dependance of the reverse bias current
- virtual Double_t ReverseBiasCurrent(Double_t temp,Double_t revBiasCurT1,
- Double_t tempT1,Double_t energy=1.2)const;
+
+ // Needed for SSD bad modules retrieval in the tracker
+ virtual void SetModuleIndex(Int_t /*modId*/) {};
+
// Prints out the content of this class in ASCII format.
virtual void Print(ostream *os) const;
// Reads in the content of this class in the format of Print
virtual void Print(Option_t *option="") const {TObject::Print(option);}
virtual Int_t Read(const char *name) {return TObject::Read(name);}
- void SetResponse(AliITSresponse* response) {fResponse=response;}
- AliITSresponse* GetResponse() const {return fResponse;}
-
- virtual void SetDiffCoeff(Float_t p1, Float_t p2) {fResponse->SetDiffCoeff(p1,p2);}
- virtual void DiffCoeff(Float_t &diff,Float_t &diff1) const {fResponse->DiffCoeff(diff,diff1);}
- virtual void SetFilenames(const char *f1="",const char *f2="",
- const char *f3="") {fResponse->SetFilenames(f1,f2,f3);}
- virtual void Filenames(char* input,char* baseline,char* param) {fResponse->Filenames(input,baseline,param);}
- virtual void SetOutputOption(Bool_t write=kFALSE) {fResponse->SetOutputOption(write);}
- virtual Bool_t OutputOption() const {return fResponse->OutputOption();}
protected:
AliITSCalibration(const AliITSCalibration &ob); // copy constructor
- AliITSCalibration& operator=(const AliITSCalibration & /* source */); // ass.
+ AliITSCalibration& operator=(const AliITSCalibration& source); // ass.
void NotImplemented(const char *method) const {if(gDebug>0)
Warning(method,"This method is not implemented for this sub-class");}
TString fDataType; // data type - real or simulated
- Double_t fdv; // The parameter d/v where d is the disance over which the
- // the potential v is applied d/v [cm/volts]
- Double_t fN; // the impurity consentration of the material in #/cm^3
Float_t fT; // The temperature of the Si in Degree K.
- Double_t fGeVcharge; // Energy to ionize (free an electron) in GeV
- AliITSresponse* fResponse; //! ptr to base response obj. It is not
// deleted here but in AliITSDetTypeSim and AliITSDetTypeRec
- ClassDef(AliITSCalibration,1) // Detector type response virtual base class
+ ClassDef(AliITSCalibration,3) // Detector type response virtual base class
};
// Input and output function for standard C++ input/output.
ostream& operator<<(ostream &os,AliITSCalibration &source);
git://git.uio.no / u / mrichter / AliRoot.git / blobdiff