* about the suitability of this software for any purpose. It is *
* provided "as is" without express or implied warranty. *
**************************************************************************/
-
/* $Id$ */
+/* History of cvs commits:
+ *
+ * $Log$
+ * Revision 1.24 2005/05/28 14:19:05 schutz
+ * Compilation warnings fixed by T.P.
+ *
+ */
+
//_________________________________________________________________________
-// Implementation version v0 of PHOS Manager class
-// Layout EMC + PPSD has name GPS2
-// The main goal of this version of AliPHOS is to calculte the
-// induced charged in the PIN diode, taking into account light
-// tracking in the PbWO4 crystal, induced signal in the
-// PIN due to MIPS particle and electronic noise.
-// This is done in the StepManager
+// Version of AliPHOSv1 which keeps all hits in TreeH
+// AddHit, StepManager,and FinishEvent are redefined
//
-//*-- Author: Odd Harald Oddland & Gines Martinez (SUBATECH)
-
+//*-- Author: Gines MARTINEZ (SUBATECH)
+//*-- Modified Nov. 22 2000 by Dmitri Peressounko
+// All hits are stored.
+// Note, that primaries will not be assigned to digits:
+// because of tiny energy deposition at each step.
+//
// --- ROOT system ---
-#include "TRandom.h"
+#include "TClonesArray.h"
// --- Standard library ---
-#include <stdio.h>
-#include <string.h>
-#include <stdlib.h>
-#include <strstream.h>
// --- AliRoot header files ---
#include "AliPHOSv2.h"
#include "AliPHOSHit.h"
-#include "AliPHOSDigit.h"
-#include "AliRun.h"
-#include "AliConst.h"
ClassImp(AliPHOSv2)
//____________________________________________________________________________
-AliPHOSv2::AliPHOSv2(const char *name, const char *title):
- AliPHOSv0(name,title)
+AliPHOSv2::AliPHOSv2()
{
- // ctor
-
- // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
- // following formula
- // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
- // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
- // RecalibrationFactor ;
- // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
- // PINEfficiency is 0.1875 from Odd Harald Odland work
- // k_0 is 0.0045 from Valery Antonenko
-
- fLightYieldMean = 700000. ;
- fIntrinsicPINEfficiency = 0.1875 ;
- fLightYieldAttenuation = 0.0045 ;
- fRecalibrationFactor = 6.2 / fLightYieldMean ;
- fElectronsPerGeV = 2.77e+8 ;
+ // default ctor
+
}
//____________________________________________________________________________
-AliPHOSv2::AliPHOSv2(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title):
- AliPHOSv0(Reconstructioner,name,title)
+AliPHOSv2::AliPHOSv2(const char *name, const char *title):
+AliPHOSv1(name,title)
+{
+ // ctor
+}
+//__________________________________________________________________________
+AliPHOSv2::~AliPHOSv2()
{
- // ctor
-
- // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
- // following formula
- // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
- // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
- // RecalibrationFactor ;
- // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
- // PINEfficiency is 0.1875 from Odd Harald Odland work
- // k_0 is 0.0045 from Valery Antonenko
-
- fLightYieldMean = 700000.;
- fIntrinsicPINEfficiency = 0.1875 ;
- fLightYieldAttenuation = 0.0045 ;
- fRecalibrationFactor = 6.2 / fLightYieldMean ;
- fElectronsPerGeV = 2.77e+8 ;
+ // dtor
}
//____________________________________________________________________________
-void AliPHOSv2::StepManager(void)
+void AliPHOSv2::AddHit(Int_t shunt, Int_t primary, Int_t Id, Float_t * hits)
{
- // Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell
- // Adds the energy deposited in the PIN diode
-
- Int_t relid[4] ; // (box, layer, row, column) indices
- Float_t xyze[4] ; // position wrt MRS and energy deposited
- TLorentzVector pos ;
- Int_t copy;
- Float_t lightyield ; // Light Yield per GeV
- Float_t nElectrons ; // Number of electrons in the PIN diode
- TString name = fGeom->GetName() ;
- Float_t global[3] ;
- Float_t local[3] ;
- Float_t lostenergy ;
-
- Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() );
-
- if ( name == "GPS2" ) { // the CPV is a PPSD
- if( gMC->CurrentVolID(copy) == gMC->VolId("GCEL") ) // We are inside a gas cell
- {
- gMC->TrackPosition(pos) ;
- xyze[0] = pos[0] ;
- xyze[1] = pos[1] ;
- xyze[2] = pos[2] ;
- xyze[3] = gMC->Edep() ;
-
-
- if ( xyze[3] != 0 ) { // there is deposited energy
- gMC->CurrentVolOffID(5, relid[0]) ; // get the PHOS Module number
- gMC->CurrentVolOffID(3, relid[1]) ; // get the Micromegas Module number
- // 1-> Geom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() upper
- // > fGeom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() lower
- gMC->CurrentVolOffID(1, relid[2]) ; // get the row number of the cell
- gMC->CurrentVolID(relid[3]) ; // get the column number
-
- // get the absolute Id number
-
- Int_t absid ;
- fGeom->RelToAbsNumbering(relid,absid) ;
-
-
- AddHit(primary, absid, xyze );
-
- } // there is deposited energy
- } // We are inside the gas of the CPV
- } // GPS2 configuration
-
- if(gMC->CurrentVolID(copy) == gMC->VolId("PXTL") )// We are inside a PBWO crystal
- {
- gMC->TrackPosition(pos) ;
- xyze[0] = pos[0] ;
- xyze[1] = pos[1] ;
- xyze[2] = pos[2] ;
- lostenergy = gMC->Edep() ;
- xyze[3] = gMC->Edep() ;
-
- global[0] = pos[0] ;
- global[1] = pos[1] ;
- global[2] = pos[2] ;
-
- if ( xyze[3] != 0 ) {
- gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ;
- relid[1] = 0 ; // means PW04
- gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module
- gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module
-
- // get the absolute Id number
-
- Int_t absid ;
- fGeom->RelToAbsNumbering(relid,absid) ;
- gMC->Gmtod(global, local, 1) ;
-
- // calculating number of electrons in the PIN diode asociated to this hit
- lightyield = gRandom->Poisson(fLightYieldMean) ;
- nElectrons = lostenergy * lightyield * fIntrinsicPINEfficiency *
- exp(-fLightYieldAttenuation * (local[1]+fGeom->GetCrystalSize(1)/2.0 ) ) ;
-
- xyze[3] = nElectrons * fRecalibrationFactor ;
- // add current hit to the hit list
- AddHit(primary, absid, xyze);
-
- } // there is deposited energy
- } // we are inside a PHOS Xtal
-
- if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN") ) // We are inside de PIN diode
- {
- gMC->TrackPosition(pos) ;
- xyze[0] = pos[0] ;
- xyze[1] = pos[1] ;
- xyze[2] = pos[2] ;
- lostenergy = gMC->Edep() ;
- xyze[3] = gMC->Edep() ;
-
- if ( xyze[3] != 0 ) {
- gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
- relid[1] = 0 ; // means PW04 and PIN
- gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
- gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module
-
- // get the absolute Id number
-
- Int_t absid ;
- fGeom->RelToAbsNumbering(relid,absid) ;
-
- // calculating number of electrons in the PIN diode asociated to this hit
- nElectrons = lostenergy * fElectronsPerGeV ;
- xyze[3] = nElectrons * fRecalibrationFactor ;
-
- // add current hit to the hit list
- AddHit(primary, absid, xyze);
- //printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]);
- //printf("Lost energy in the PIN is %f \n",lostenergy) ;
- } // there is deposited energy
- } // we are inside a PHOS XtalPHOS PIN diode
+ // Add a hit to the hit list.
+
+ AliPHOSHit *newHit ;
+
+ newHit = new AliPHOSHit(shunt, primary, Id, hits) ;
+
+ new((*fHits)[fNhits]) AliPHOSHit(*newHit) ;
+ fNhits++ ;
+
+ delete newHit;
+
}
+
git://git.uio.no / u / mrichter / AliRoot.git / blobdiff