const AliEMCALGeometry *geom = gime->EMCALGeometry() ;
- //Making digits from noise first
Int_t nEMC = 0 ;
nEMC = geom->GetNPhi()*geom->GetNZ(); //max number of digits possible
Int_t channel = -999;
channel = static_cast<Int_t> (TMath::Ceil( (energy + fADCpedestalEC)/fADCchannelEC )) ;
if(channel > fNADCEC )
- channel = fNADCEC ;
+ channel = fNADCEC ;
return channel ;
}
//____________________________________________________________________________
void AliEMCALDigitizer::InitParameters()
{
- fMeanPhotonElectron = 1250 ; // electrons per GeV
- fPinNoise = 0.001 ; // noise equivalent GeV (random choice)
+ fMeanPhotonElectron = 18200 ; // electrons per GeV
+ fPinNoise = 0.1 ; // noise equivalent GeV (random choice)
if (fPinNoise == 0. )
Warning("InitParameters", "No noise added\n") ;
fDigitThreshold = fPinNoise * 3; //2 sigma
- fTimeResolution = 0.5e-9 ;
+ fTimeResolution = 1.0e-9 ;
fTimeSignalLength = 1.0e-9 ;
- fADCchannelEC = 0.000220; // width of one ADC channel in GeV
+ fADCchannelEC = 0.00050; // width of one ADC channel in GeV
fADCpedestalEC = 0.005 ; // GeV
fNADCEC = (Int_t) TMath::Power(2,16) ; // number of channels in Tower ADC
printf("InitParameters: Sampling factor set to %f\n", geom->GetSampling()) ;
// this threshold corresponds approximately to 100 MeV
- fECPrimThreshold = 100E-3 / ( geom->GetSampling() * geom->GetNECLayers()) * geom->GetNECLayers() ;
+ fECPrimThreshold = 100E-3;
}
//____________________________________________________________________________
if( (depositedEnergy = gMC->Edep()) > 0.){// Track is inside a scintillator and deposits some energy
+ // use sampling fraction to get original energy --HG
+ depositedEnergy = depositedEnergy * geom->GetSampling();
+
gMC->TrackPosition(pos);
xyzte[0] = pos[0];
xyzte[1] = pos[1];