**************************************************************************/
/* $Id$ */
-
//_________________________________________________________________________
-// Implementation version v0 of PHOS Manager class
-// Layout EMC + PPSD has name GPS2
-// The main goal of this version of AliPHOS is to calculte the
-// induced charged in the PIN diode, taking into account light
-// tracking in the PbWO4 crystal, induced signal in the
-// PIN due to MIPS particle and electronic noise.
-// This is done in the StepManager
+// Version of AliPHOSv0 which allows for keeping all hits in TreeH
//
-//*-- Author: Odd Harald Oddland & Gines Martinez (SUBATECH)
+//*-- Author: Gines MARTINEZ (SUBATECH)
// --- ROOT system ---
+
+#include "TBRIK.h"
+#include "TNode.h"
#include "TRandom.h"
// --- Standard library ---
#include "AliPHOSv1.h"
#include "AliPHOSHit.h"
#include "AliPHOSDigit.h"
+#include "AliPHOSReconstructioner.h"
#include "AliRun.h"
#include "AliConst.h"
ClassImp(AliPHOSv1)
+//____________________________________________________________________________
+AliPHOSv1::AliPHOSv1()
+{
+ // default ctor
+ fNTmpHits = 0 ;
+ fTmpHits = 0 ;
+}
+
//____________________________________________________________________________
AliPHOSv1::AliPHOSv1(const char *name, const char *title):
AliPHOSv0(name,title)
{
- // ctor
-
- // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
- // following formula
- // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
- // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
- // RecalibrationFactor ;
- // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
- // PINEfficiency is 0.1875 from Odd Harald Odland work
- // k_0 is 0.0045 from Valery Antonenko
-
- fLightYieldMean = 700000. ;
- fIntrinsicPINEfficiency = 0.1875 ;
- fLightYieldAttenuation = 0.0045 ;
- fRecalibrationFactor = 6.2 / fLightYieldMean ;
- fElectronsPerGeV = 2.77e+8 ;
+ // ctor
+ fHits= new TClonesArray("AliPHOSHit",1000) ;
}
//____________________________________________________________________________
-AliPHOSv1::AliPHOSv1(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title):
- AliPHOSv0(Reconstructioner,name,title)
+AliPHOSv1::~AliPHOSv1()
{
- // ctor
-
- // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
- // following formula
- // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
- // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
- // RecalibrationFactor ;
- // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
- // PINEfficiency is 0.1875 from Odd Harald Odland work
- // k_0 is 0.0045 from Valery Antonenko
-
- fLightYieldMean = 700000.;
- fIntrinsicPINEfficiency = 0.1875 ;
- fLightYieldAttenuation = 0.0045 ;
- fRecalibrationFactor = 6.2 / fLightYieldMean ;
- fElectronsPerGeV = 2.77e+8 ;
+ // dtor
+ fTmpHits->Delete() ;
+ delete fTmpHits ;
+ fTmpHits = 0 ;
+
+ fEmcRecPoints->Delete() ;
+ delete fEmcRecPoints ;
+ fEmcRecPoints = 0 ;
+
+ fPpsdRecPoints->Delete() ;
+ delete fPpsdRecPoints ;
+ fPpsdRecPoints = 0 ;
+
+ fTrackSegments->Delete() ;
+ delete fTrackSegments ;
+ fTrackSegments = 0 ;
+
}
//____________________________________________________________________________
+void AliPHOSv1::AddHit(Int_t shunt, Int_t primary, Int_t tracknumber, Int_t Id, Float_t * hits)
+{
+ // Add a hit to the hit list.
+ // In this version of AliPHOSv0, a PHOS hit is real geant
+ // hits in a single crystal or in a single PPSD gas cell
+
+ // cout << "Primary is " << primary << endl;
+ //cout << "Tracknumber is " << tracknumber << endl;
+ //cout << "Vol Id is " << Id << endl;
+ //cout << "hits is " << hits[0] << " " << hits[1] << " " << hits[2] << " " << hits[3] <<endl;
+
+ // cout << " Adding a hit number " << fNhits << endl ;
+
+ TClonesArray <mphits = *fHits ;
+ AliPHOSHit *newHit ;
+
+ // fHits->Print("");
+
+ newHit = new AliPHOSHit(shunt, primary, tracknumber, Id, hits) ;
+
+ // We DO want to save in TreeH the raw hits
+ // TClonesArray &lhits = *fHits;
+ // cout << " Adding a hit to fHits TCloneArray number " << fNhits << endl ;
+ new(ltmphits[fNhits]) AliPHOSHit(*newHit) ;
+ fNhits++ ;
+
+ // cout << " Added a hit to fHits TCloneArray number " << fNhits << endl ;
+ // We do not want to save in TreeH the raw hits
+ // new(lhits[fNhits]) AliPHOSHit(*newHit) ;
+ // fNhits++ ;
+
+ // Please note that the fTmpHits array must survive up to the
+ // end of the events, so it does not appear e.g. in ResetHits() (
+ // which is called at the end of each primary).
+
+ delete newHit;
+
+}
+
+
+
+
+//___________________________________________________________________________
+void AliPHOSv1::FinishEvent()
+{
+ // Makes the digits from the sum of summed hit in a single crystal or PPSD gas cell
+ // Adds to the energy the electronic noise
+ // Keeps digits with energy above fDigitThreshold
+
+ // Save the cumulated hits instead of raw hits (need to create the branch myself)
+ // It is put in the Digit Tree because the TreeH is filled after each primary
+ // and the TreeD at the end of the event.
+
+ Int_t i ;
+ Int_t relid[4];
+ Int_t j ;
+ TClonesArray &lDigits = *fDigits ;
+ AliPHOSHit * hit ;
+ AliPHOSDigit * newdigit ;
+ AliPHOSDigit * curdigit ;
+ Bool_t deja = kFALSE ;
+
+ for ( i = 0 ; i < fNhits ; i++ ) {
+ hit = (AliPHOSHit*)fHits->At(i) ;
+ newdigit = new AliPHOSDigit( hit->GetPrimary(), hit->GetId(), Digitize( hit->GetEnergy() ) ) ;
+ deja =kFALSE ;
+ for ( j = 0 ; j < fNdigits ; j++) {
+ curdigit = (AliPHOSDigit*) lDigits[j] ;
+ if ( *curdigit == *newdigit) {
+ *curdigit = *curdigit + *newdigit ;
+ deja = kTRUE ;
+ }
+ }
+ if ( !deja ) {
+ new(lDigits[fNdigits]) AliPHOSDigit(* newdigit) ;
+ fNdigits++ ;
+ }
+
+ delete newdigit ;
+ }
+
+ // Noise induced by the PIN diode of the PbWO crystals
+
+ Float_t energyandnoise ;
+ for ( i = 0 ; i < fNdigits ; i++ ) {
+ newdigit = (AliPHOSDigit * ) fDigits->At(i) ;
+ fGeom->AbsToRelNumbering(newdigit->GetId(), relid) ;
+
+ if (relid[1]==0){ // Digits belong to EMC (PbW0_4 crystals)
+ energyandnoise = newdigit->GetAmp() + Digitize(gRandom->Gaus(0., fPinElectronicNoise)) ;
+
+ if (energyandnoise < 0 )
+ energyandnoise = 0 ;
+
+ if ( newdigit->GetAmp() < fDigitThreshold ) // if threshold not surpassed, remove digit from list
+ fDigits->RemoveAt(i) ;
+ }
+ }
+
+ fDigits->Compress() ;
+
+ fNdigits = fDigits->GetEntries() ;
+ for (i = 0 ; i < fNdigits ; i++) {
+ newdigit = (AliPHOSDigit *) fDigits->At(i) ;
+ newdigit->SetIndexInList(i) ;
+ }
+
+}
+
void AliPHOSv1::StepManager(void)
{
// Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell
- // Adds the energy deposited in the PIN diode
Int_t relid[4] ; // (box, layer, row, column) indices
Float_t xyze[4] ; // position wrt MRS and energy deposited
TLorentzVector pos ;
- Int_t copy;
- Float_t lightyield ; // Light Yield per GeV
- Float_t nElectrons ; // Number of electrons in the PIN diode
- TString name = fGeom->GetName() ;
- Float_t global[3] ;
- Float_t local[3] ;
- Float_t lostenergy ;
+ Int_t copy ;
- Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() );
+ Int_t tracknumber = gAlice->CurrentTrack() ;
+ Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() );
+ TString name = fGeom->GetName() ;
if ( name == "GPS2" ) { // the CPV is a PPSD
if( gMC->CurrentVolID(copy) == gMC->VolId("GCEL") ) // We are inside a gas cell
{
xyze[0] = pos[0] ;
xyze[1] = pos[1] ;
xyze[2] = pos[2] ;
- xyze[3] = gMC->Edep() ;
-
+ xyze[3] = gMC->Edep() ;
if ( xyze[3] != 0 ) { // there is deposited energy
gMC->CurrentVolOffID(5, relid[0]) ; // get the PHOS Module number
// get the absolute Id number
Int_t absid ;
- fGeom->RelToAbsNumbering(relid,absid) ;
-
+ fGeom->RelToAbsNumbering(relid, absid) ;
- AddHit(primary, absid, xyze );
+ // add current hit to the hit list
+ AddHit(fIshunt, primary, tracknumber, absid, xyze);
} // there is deposited energy
} // We are inside the gas of the CPV
} // GPS2 configuration
- if(gMC->CurrentVolID(copy) == gMC->VolId("PXTL") )// We are inside a PBWO crystal
+ if(gMC->CurrentVolID(copy) == gMC->VolId("PXTL") ) // We are inside a PBWO crystal
{
gMC->TrackPosition(pos) ;
xyze[0] = pos[0] ;
xyze[1] = pos[1] ;
xyze[2] = pos[2] ;
- lostenergy = gMC->Edep() ;
xyze[3] = gMC->Edep() ;
- global[0] = pos[0] ;
- global[1] = pos[1] ;
- global[2] = pos[2] ;
-
if ( xyze[3] != 0 ) {
gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ;
- relid[1] = 0 ; // means PW04
+ relid[1] = 0 ; // means PBW04
gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module
gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module
// get the absolute Id number
Int_t absid ;
- fGeom->RelToAbsNumbering(relid,absid) ;
- gMC->Gmtod(global, local, 1) ;
-
- // calculating number of electrons in the PIN diode asociated to this hit
- lightyield = gRandom->Poisson(fLightYieldMean) ;
- nElectrons = lostenergy * lightyield * fIntrinsicPINEfficiency *
- exp(-fLightYieldAttenuation * (local[1]+fGeom->GetCrystalSize(1)/2.0 ) ) ;
-
- xyze[3] = nElectrons * fRecalibrationFactor ;
- // add current hit to the hit list
- AddHit(primary, absid, xyze);
+ fGeom->RelToAbsNumbering(relid, absid) ;
+
+ // add current hit to the hit list
+
+ AddHit(fIshunt, primary,tracknumber, absid, xyze);
} // there is deposited energy
} // we are inside a PHOS Xtal
-
- if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN") ) // We are inside de PIN diode
- {
- gMC->TrackPosition(pos) ;
- xyze[0] = pos[0] ;
- xyze[1] = pos[1] ;
- xyze[2] = pos[2] ;
- lostenergy = gMC->Edep() ;
- xyze[3] = gMC->Edep() ;
-
- if ( xyze[3] != 0 ) {
- gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
- relid[1] = 0 ; // means PW04 and PIN
- gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
- gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module
-
- // get the absolute Id number
-
- Int_t absid ;
- fGeom->RelToAbsNumbering(relid,absid) ;
-
- // calculating number of electrons in the PIN diode asociated to this hit
- nElectrons = lostenergy * fElectronsPerGeV ;
- xyze[3] = nElectrons * fRecalibrationFactor ;
-
- // add current hit to the hit list
- AddHit(primary, absid, xyze);
- //printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]);
- //printf("Lost energy in the PIN is %f \n",lostenergy) ;
- } // there is deposited energy
- } // we are inside a PHOS XtalPHOS PIN diode
}
#ifndef ALIPHOSV1_H
#define ALIPHOSV1_H
-/* Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
+/* Copyright(c) 1998-1999-2000, ALICE Experiment at CERN, All rights reserved. *
* See cxx source for full Copyright notice */
-
//_________________________________________________________________________
-// Implementation version v0 of PHOS Manager class
-// Layout EMC + PPSD has name GPS2
-// The main goal of this version of AliPHOS is to calculte the
-// induced charged in the PIN diode, taking into account light
-// tracking in the PbWO4 crystal, induced signal in the
-// PIN due to MIPS particle and electronic noise.
-// This is done in the StepManager
+// Version of AliPHOSv0 which allows for keeping all hits in TreeH
+// This version is NOT recommended for Reconstruction analysis
//
-//*-- Author: Odd Harald Oddland & Gines Martinez (SUBATECH)
+//*-- Author: Gines MARTINEZ (SUBATECH)
// --- ROOT system ---
-
+#include "TClonesArray.h"
// --- AliRoot header files ---
#include "AliPHOSv0.h"
-
+#include "AliPHOSReconstructioner.h"
class AliPHOSv1 : public AliPHOSv0 {
public:
- AliPHOSv1(void) : AliPHOSv0() {} // ctor
+ AliPHOSv1(void) ;
AliPHOSv1(const char *name, const char *title="") ;
- AliPHOSv1(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title="") ;
- virtual ~AliPHOSv1(void) {}
-
- virtual void StepManager(void) ; // does the tracking through PHOS and a preliminary digitalization
-
-
-private:
-
- Float_t fLightYieldMean ; // Mean lightyield in the PbOW4 xtal per GeV (Poisson distribution)
- Float_t fIntrinsicPINEfficiency ; // Photo efficiency of the PIN diode
- Float_t fLightYieldAttenuation ; // Attenuation of the light through the crystal
- Float_t fRecalibrationFactor ; // Recalibration factor
- Float_t fElectronsPerGeV ; // Number of electrons per GeV created in the PIN by a ionizing particle
-
- ClassDef(AliPHOSv1,1) // Implementation of PHOS manager class for layout EMC+PPSD with light transport, MIPS in PIN and electronic noise
+ virtual ~AliPHOSv1(void) ;
+
+ virtual void AddHit( Int_t shunt, Int_t primary, Int_t track, Int_t id, Float_t *hits ) ;
+// adds a hit to the hit tree (any pre=digitalization is done here (so large root file !!)
+ void FinishEvent(void) ; // makes the digits from the hits
+ virtual void StepManager(void) ; // StepManager to keep current tack number in the hit
+
+protected:
+
+ ClassDef(AliPHOSv1,1) // Class AliPHOSv0 which allows to write ond disk al the information of the hits.
};
--- /dev/null
+/**************************************************************************
+ * Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
+ * *
+ * Author: The ALICE Off-line Project. *
+ * Contributors are mentioned in the code where appropriate. *
+ * *
+ * Permission to use, copy, modify and distribute this software and its *
+ * documentation strictly for non-commercial purposes is hereby granted *
+ * without fee, provided that the above copyright notice appears in all *
+ * copies and that both the copyright notice and this permission notice *
+ * appear in the supporting documentation. The authors make no claims *
+ * about the suitability of this software for any purpose. It is *
+ * provided "as is" without express or implied warranty. *
+ **************************************************************************/
+
+/* $Id$ */
+
+//_________________________________________________________________________
+// Implementation version v0 of PHOS Manager class
+// Layout EMC + PPSD has name GPS2
+// The main goal of this version of AliPHOS is to calculte the
+// induced charged in the PIN diode, taking into account light
+// tracking in the PbWO4 crystal, induced signal in the
+// PIN due to MIPS particle and electronic noise.
+// This is done in the StepManager
+//
+//*-- Author: Odd Harald Oddland & Gines Martinez (SUBATECH)
+
+
+// --- ROOT system ---
+#include "TRandom.h"
+
+// --- Standard library ---
+
+#include <stdio.h>
+#include <string.h>
+#include <stdlib.h>
+#include <strstream.h>
+
+// --- AliRoot header files ---
+
+#include "AliPHOSv2.h"
+#include "AliPHOSHit.h"
+#include "AliPHOSDigit.h"
+#include "AliRun.h"
+#include "AliConst.h"
+
+ClassImp(AliPHOSv2)
+
+//____________________________________________________________________________
+AliPHOSv2::AliPHOSv2(const char *name, const char *title):
+ AliPHOSv0(name,title)
+{
+ // ctor
+
+ // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
+ // following formula
+ // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
+ // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
+ // RecalibrationFactor ;
+ // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
+ // PINEfficiency is 0.1875 from Odd Harald Odland work
+ // k_0 is 0.0045 from Valery Antonenko
+
+ fLightYieldMean = 700000. ;
+ fIntrinsicPINEfficiency = 0.1875 ;
+ fLightYieldAttenuation = 0.0045 ;
+ fRecalibrationFactor = 6.2 / fLightYieldMean ;
+ fElectronsPerGeV = 2.77e+8 ;
+}
+
+//____________________________________________________________________________
+AliPHOSv2::AliPHOSv2(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title):
+ AliPHOSv0(Reconstructioner,name,title)
+{
+ // ctor
+
+ // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
+ // following formula
+ // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
+ // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
+ // RecalibrationFactor ;
+ // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
+ // PINEfficiency is 0.1875 from Odd Harald Odland work
+ // k_0 is 0.0045 from Valery Antonenko
+
+ fLightYieldMean = 700000.;
+ fIntrinsicPINEfficiency = 0.1875 ;
+ fLightYieldAttenuation = 0.0045 ;
+ fRecalibrationFactor = 6.2 / fLightYieldMean ;
+ fElectronsPerGeV = 2.77e+8 ;
+}
+
+//____________________________________________________________________________
+void AliPHOSv2::StepManager(void)
+{
+ // Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell
+ // Adds the energy deposited in the PIN diode
+
+ Int_t relid[4] ; // (box, layer, row, column) indices
+ Float_t xyze[4] ; // position wrt MRS and energy deposited
+ TLorentzVector pos ;
+ Int_t copy;
+ Float_t lightyield ; // Light Yield per GeV
+ Float_t nElectrons ; // Number of electrons in the PIN diode
+ TString name = fGeom->GetName() ;
+ Float_t global[3] ;
+ Float_t local[3] ;
+ Float_t lostenergy ;
+
+ Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() );
+
+ if ( name == "GPS2" ) { // the CPV is a PPSD
+ if( gMC->CurrentVolID(copy) == gMC->VolId("GCEL") ) // We are inside a gas cell
+ {
+ gMC->TrackPosition(pos) ;
+ xyze[0] = pos[0] ;
+ xyze[1] = pos[1] ;
+ xyze[2] = pos[2] ;
+ xyze[3] = gMC->Edep() ;
+
+
+ if ( xyze[3] != 0 ) { // there is deposited energy
+ gMC->CurrentVolOffID(5, relid[0]) ; // get the PHOS Module number
+ gMC->CurrentVolOffID(3, relid[1]) ; // get the Micromegas Module number
+ // 1-> Geom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() upper
+ // > fGeom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() lower
+ gMC->CurrentVolOffID(1, relid[2]) ; // get the row number of the cell
+ gMC->CurrentVolID(relid[3]) ; // get the column number
+
+ // get the absolute Id number
+
+ Int_t absid ;
+ fGeom->RelToAbsNumbering(relid,absid) ;
+
+
+ AddHit(primary, absid, xyze );
+
+ } // there is deposited energy
+ } // We are inside the gas of the CPV
+ } // GPS2 configuration
+
+ if(gMC->CurrentVolID(copy) == gMC->VolId("PXTL") )// We are inside a PBWO crystal
+ {
+ gMC->TrackPosition(pos) ;
+ xyze[0] = pos[0] ;
+ xyze[1] = pos[1] ;
+ xyze[2] = pos[2] ;
+ lostenergy = gMC->Edep() ;
+ xyze[3] = gMC->Edep() ;
+
+ global[0] = pos[0] ;
+ global[1] = pos[1] ;
+ global[2] = pos[2] ;
+
+ if ( xyze[3] != 0 ) {
+ gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ;
+ relid[1] = 0 ; // means PW04
+ gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module
+ gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module
+
+ // get the absolute Id number
+
+ Int_t absid ;
+ fGeom->RelToAbsNumbering(relid,absid) ;
+ gMC->Gmtod(global, local, 1) ;
+
+ // calculating number of electrons in the PIN diode asociated to this hit
+ lightyield = gRandom->Poisson(fLightYieldMean) ;
+ nElectrons = lostenergy * lightyield * fIntrinsicPINEfficiency *
+ exp(-fLightYieldAttenuation * (local[1]+fGeom->GetCrystalSize(1)/2.0 ) ) ;
+
+ xyze[3] = nElectrons * fRecalibrationFactor ;
+ // add current hit to the hit list
+ AddHit(primary, absid, xyze);
+
+ } // there is deposited energy
+ } // we are inside a PHOS Xtal
+
+ if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN") ) // We are inside de PIN diode
+ {
+ gMC->TrackPosition(pos) ;
+ xyze[0] = pos[0] ;
+ xyze[1] = pos[1] ;
+ xyze[2] = pos[2] ;
+ lostenergy = gMC->Edep() ;
+ xyze[3] = gMC->Edep() ;
+
+ if ( xyze[3] != 0 ) {
+ gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
+ relid[1] = 0 ; // means PW04 and PIN
+ gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
+ gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module
+
+ // get the absolute Id number
+
+ Int_t absid ;
+ fGeom->RelToAbsNumbering(relid,absid) ;
+
+ // calculating number of electrons in the PIN diode asociated to this hit
+ nElectrons = lostenergy * fElectronsPerGeV ;
+ xyze[3] = nElectrons * fRecalibrationFactor ;
+
+ // add current hit to the hit list
+ AddHit(primary, absid, xyze);
+ //printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]);
+ //printf("Lost energy in the PIN is %f \n",lostenergy) ;
+ } // there is deposited energy
+ } // we are inside a PHOS XtalPHOS PIN diode
+}
+
--- /dev/null
+#ifndef ALIPHOSV2_H
+#define ALIPHOSV2_H
+/* Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
+ * See cxx source for full Copyright notice */
+
+//_________________________________________________________________________
+// Implementation version v0 of PHOS Manager class
+// Layout EMC + PPSD has name GPS2
+// The main goal of this version of AliPHOS is to calculte the
+// induced charged in the PIN diode, taking into account light
+// tracking in the PbWO4 crystal, induced signal in the
+// PIN due to MIPS particle and electronic noise.
+// This is done in the StepManager
+//
+//*-- Author: Odd Harald Oddland & Gines Martinez (SUBATECH)
+
+// --- ROOT system ---
+
+
+// --- AliRoot header files ---
+#include "AliPHOSv0.h"
+
+
+class AliPHOSv2 : public AliPHOSv0 {
+
+public:
+
+ AliPHOSv2(void) : AliPHOSv0() {
+ // ctor
+ }
+ AliPHOSv2(const char *name, const char *title="") ;
+ AliPHOSv2(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title="") ;
+ virtual ~AliPHOSv2(void) {
+ // dtor
+ }
+
+ virtual void StepManager(void) ; // does the tracking through PHOS and a preliminary digitalization
+
+
+private:
+
+ Float_t fLightYieldMean ; // Mean lightyield in the PbOW4 xtal per GeV (Poisson distribution)
+ Float_t fIntrinsicPINEfficiency ; // Photo efficiency of the PIN diode
+ Float_t fLightYieldAttenuation ; // Attenuation of the light through the crystal
+ Float_t fRecalibrationFactor ; // Recalibration factor
+ Float_t fElectronsPerGeV ; // Number of electrons per GeV created in the PIN by a ionizing particle
+
+ ClassDef(AliPHOSv2,1) // Implementation of PHOS manager class for layout EMC+PPSD with light transport, MIPS in PIN and electronic noise
+
+};
+
+#endif // AliPHOSV2_H
# C++ sources
-SRCS = AliPHOS.cxx AliPHOSv0.cxx AliPHOSv0hits.cxx AliPHOSv1.cxx AliPHOSHit.cxx \
+SRCS = AliPHOS.cxx AliPHOSv0.cxx AliPHOSv1.cxx AliPHOSv2.cxx AliPHOSHit.cxx \
AliPHOSGeometry.cxx \
AliPHOSDigit.cxx \
AliPHOSRecPoint.cxx AliPHOSEmcRecPoint.cxx AliPHOSPpsdRecPoint.cxx \
#pragma link C++ class AliPHOSReconstructioner ;
#pragma link C++ class AliPHOSRecPoint ;
#pragma link C++ class AliPHOSv0 ;
-#pragma link C++ class AliPHOSv0hits ;
#pragma link C++ class AliPHOSv1 ;
+#pragma link C++ class AliPHOSv2 ;
#pragma link C++ class AliPHOSTrackSegment ;
#pragma link C++ class AliPHOSTrackSegmentMaker ;
#pragma link C++ class AliPHOSTrackSegmentMakerv1 ;
git://git.uio.no / u / mrichter / AliRoot.git / commitdiff