/**************************************************************************
* Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
* *
* Author: The ALICE Off-line Project. *
* Contributors are mentioned in the code where appropriate. *
* *
* Permission to use, copy, modify and distribute this software and its *
* documentation strictly for non-commercial purposes is hereby granted *
* without fee, provided that the above copyright notice appears in all *
* copies and that both the copyright notice and this permission notice *
* appear in the supporting documentation. The authors make no claims *
* about the suitability of this software for any purpose. It is *
* provided "as is" without express or implied warranty. *
**************************************************************************/
/* $Id$ */
//_________________________________________________________________________
// Geometry class for PHOS : EMCA (Electromagnetic Calorimeter)
// Its data members provide geometry parametrization of EMCA
// which can be changed in the constructor only.
// Author : Yves Schutz (SUBATECH)
// Modified : Yuri Kharlov (IHEP, Protvino)
// 13 September 2000
// --- AliRoot header files ---
#include "AliPHOSEMCAGeometry.h"
ClassImp(AliPHOSEMCAGeometry) ;
//____________________________________________________________________________
AliPHOSEMCAGeometry::AliPHOSEMCAGeometry()
{
// Initializes the EMC parameters
fNPhi = 64 ;
fNZ = 64 ;
fXtlSize[0] = 2.2 ;
fXtlSize[1] = 22.0 ;
fXtlSize[2] = 2.2 ;
// all these numbers coming next are subject to changes
fOuterBoxThickness[0] = 2.5 ;
fOuterBoxThickness[1] = 5.0 ;
fOuterBoxThickness[2] = 5.0 ;
fUpperPlateThickness = 4.0 ;
fSecondUpperPlateThickness = 5.0 ;
fCrystalSupportHeight = 6.95 ;
fCrystalWrapThickness = 0.01 ;
fCrystalHolderThickness = 0.005 ;
fModuleBoxThickness = 2.0 ;
fIPtoOuterCoverDistance = 447.0 ;
fIPtoCrystalSurface = 460.0 ;
fPinDiodeSize[0] = 1.71 ; //Values given by Odd Harald feb 2000
fPinDiodeSize[1] = 0.0280 ; // 0.0280 is the depth of active layer in the silicon
fPinDiodeSize[2] = 1.61 ;
fUpperCoolingPlateThickness = 0.06 ;
fSupportPlateThickness = 10.0 ;
fLowerThermoPlateThickness = 3.0 ;
fLowerTextolitPlateThickness = 1.0 ;
fGapBetweenCrystals = 0.03 ;
fTextolitBoxThickness[0] = 1.5 ;
fTextolitBoxThickness[1] = 0.0 ;
fTextolitBoxThickness[2] = 3.0 ;
fAirThickness[0] = 0.4 ;
fAirThickness[1] = 20.5175 ;
fAirThickness[2] = 2.48 ;
Float_t xtalModulePhiSize = fNPhi * ( fXtlSize[0] + 2 * fGapBetweenCrystals ) ;
Float_t xtalModuleZSize = fNZ * ( fXtlSize[2] + 2 * fGapBetweenCrystals ) ;
// The next dimensions are calculated from the above parameters
fOuterBoxSize[0] = xtalModulePhiSize + 2 * ( fAirThickness[0] + fModuleBoxThickness
+ fTextolitBoxThickness[0] + fOuterBoxThickness[0] ) ;
fOuterBoxSize[1] = ( fXtlSize[1] + fCrystalSupportHeight + fCrystalWrapThickness + fCrystalHolderThickness )
+ 2 * (fAirThickness[1] + fModuleBoxThickness + fTextolitBoxThickness[1] + fOuterBoxThickness[1] ) ;
fOuterBoxSize[2] = xtalModuleZSize + 2 * ( fAirThickness[2] + fModuleBoxThickness
+ fTextolitBoxThickness[2] + fOuterBoxThickness[2] ) ;
fTextolitBoxSize[0] = fOuterBoxSize[0] - 2 * fOuterBoxThickness[0] ;
fTextolitBoxSize[1] = fOuterBoxSize[1] - fOuterBoxThickness[1] - fUpperPlateThickness ;
fTextolitBoxSize[2] = fOuterBoxSize[2] - 2 * fOuterBoxThickness[2] ;
fAirFilledBoxSize[0] = fTextolitBoxSize[0] - 2 * fTextolitBoxThickness[0] ;
fAirFilledBoxSize[1] = fTextolitBoxSize[1] - fSecondUpperPlateThickness ;
fAirFilledBoxSize[2] = fTextolitBoxSize[2] - 2 * fTextolitBoxThickness[2] ;
}
//____________________________________________________________________________
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