/**************************************************************************
* Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
* *
* Author: The ALICE Off-line Project. *
* Contributors are mentioned in the code where appropriate. *
* *
* Permission to use, copy, modify and distribute this software and its *
* documentation strictly for non-commercial purposes is hereby granted *
* without fee, provided that the above copyright notice appears in all *
* copies and that both the copyright notice and this permission notice *
* appear in the supporting documentation. The authors make no claims *
* about the suitability of this software for any purpose. It is *
* provided "as is" without express or implied warranty. *
**************************************************************************/
/* $Id$ */
//_________________________________________________________________________
// Implementation version v0 of PHOS Manager class
// Layout EMC + PPSD has name GPS2
// The main goal of this version of AliPHOS is to calculte the
// induced charged in the PIN diode, taking into account light
// tracking in the PbWO4 crystal, induced signal in the
// PIN due to MIPS particle and electronic noise.
// This is done in the StepManager
//
//*-- Author: Odd Harald Oddland & Gines Martinez (SUBATECH)
// --- ROOT system ---
#include "TRandom.h"
// --- Standard library ---
#include <cstdio>
#include <cstring>
#include <cstdlib>
#include <strstream>
// --- AliRoot header files ---
#include "AliPHOSv1.h"
#include "AliPHOSHit.h"
#include "AliPHOSDigit.h"
#include "AliRun.h"
#include "AliConst.h"
ClassImp(AliPHOSv1)
//____________________________________________________________________________
AliPHOSv1::AliPHOSv1(const char *name, const char *title):
AliPHOSv0(name,title)
{
// ctor
// Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
// following formula
// NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
// exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
// RecalibrationFactor ;
// LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
// PINEfficiency is 0.1875 from Odd Harald Odland work
// k_0 is 0.0045 from Valery Antonenko
fLightYieldMean = 700000. ;
fIntrinsicPINEfficiency = 0.1875 ;
fLightYieldAttenuation = 0.0045 ;
fRecalibrationFactor = 6.2 / fLightYieldMean ;
fElectronsPerGeV = 2.77e+8 ;
}
//____________________________________________________________________________
AliPHOSv1::AliPHOSv1(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title):
AliPHOSv0(Reconstructioner,name,title)
{
// ctor
// Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
// following formula
// NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
// exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
// RecalibrationFactor ;
// LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
// PINEfficiency is 0.1875 from Odd Harald Odland work
// k_0 is 0.0045 from Valery Antonenko
fLightYieldMean = 700000.;
fIntrinsicPINEfficiency = 0.1875 ;
fLightYieldAttenuation = 0.0045 ;
fRecalibrationFactor = 6.2 / fLightYieldMean ;
fElectronsPerGeV = 2.77e+8 ;
}
//____________________________________________________________________________
void AliPHOSv1::StepManager(void)
{
// Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell
// Adds the energy deposited in the PIN diode
Int_t relid[4] ; // (box, layer, row, column) indices
Float_t xyze[4] ; // position wrt MRS and energy deposited
TLorentzVector pos ;
Int_t copy;
Float_t lightyield ; // Light Yield per GeV
Float_t nElectrons ; // Number of electrons in the PIN diode
TString name = fGeom->GetName() ;
Float_t global[3] ;
Float_t local[3] ;
Float_t lostenergy ;
Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() );
if ( name == "GPS2" ) { // the CPV is a PPSD
if( gMC->CurrentVolID(copy) == gMC->VolId("GCEL") ) // We are inside a gas cell
{
gMC->TrackPosition(pos) ;
xyze[0] = pos[0] ;
xyze[1] = pos[1] ;
xyze[2] = pos[2] ;
xyze[3] = gMC->Edep() ;
if ( xyze[3] != 0 ) { // there is deposited energy
gMC->CurrentVolOffID(5, relid[0]) ; // get the PHOS Module number
gMC->CurrentVolOffID(3, relid[1]) ; // get the Micromegas Module number
// 1-> Geom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() upper
// > fGeom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() lower
gMC->CurrentVolOffID(1, relid[2]) ; // get the row number of the cell
gMC->CurrentVolID(relid[3]) ; // get the column number
// get the absolute Id number
Int_t absid ;
fGeom->RelToAbsNumbering(relid,absid) ;
AddHit(primary, absid, xyze );
} // there is deposited energy
} // We are inside the gas of the CPV
} // GPS2 configuration
if(gMC->CurrentVolID(copy) == gMC->VolId("PXTL") )// We are inside a PBWO crystal
{
gMC->TrackPosition(pos) ;
xyze[0] = pos[0] ;
xyze[1] = pos[1] ;
xyze[2] = pos[2] ;
lostenergy = gMC->Edep() ;
xyze[3] = gMC->Edep() ;
global[0] = pos[0] ;
global[1] = pos[1] ;
global[2] = pos[2] ;
if ( xyze[3] != 0 ) {
gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ;
relid[1] = 0 ; // means PW04
gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module
gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module
// get the absolute Id number
Int_t absid ;
fGeom->RelToAbsNumbering(relid,absid) ;
gMC->Gmtod(global, local, 1) ;
// calculating number of electrons in the PIN diode asociated to this hit
lightyield = gRandom->Poisson(fLightYieldMean) ;
nElectrons = lostenergy * lightyield * fIntrinsicPINEfficiency *
exp(-fLightYieldAttenuation * (local[1]+fGeom->GetCrystalSize(1)/2.0 ) ) ;
xyze[3] = nElectrons * fRecalibrationFactor ;
// add current hit to the hit list
AddHit(primary, absid, xyze);
} // there is deposited energy
} // we are inside a PHOS Xtal
if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN") ) // We are inside de PIN diode
{
gMC->TrackPosition(pos) ;
xyze[0] = pos[0] ;
xyze[1] = pos[1] ;
xyze[2] = pos[2] ;
lostenergy = gMC->Edep() ;
xyze[3] = gMC->Edep() ;
if ( xyze[3] != 0 ) {
gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
relid[1] = 0 ; // means PW04 and PIN
gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module
// get the absolute Id number
Int_t absid ;
fGeom->RelToAbsNumbering(relid,absid) ;
// calculating number of electrons in the PIN diode asociated to this hit
nElectrons = lostenergy * fElectronsPerGeV ;
xyze[3] = nElectrons * fRecalibrationFactor ;
// add current hit to the hit list
AddHit(primary, absid, xyze);
//printf("PIN volume is %d, %d, %d, %d n",relid[0],relid[1],relid[2],relid[3]);
//printf("Lost energy in the PIN is %f n",lostenergy) ;
} // there is deposited energy
} // we are inside a PHOS XtalPHOS PIN diode
}
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