fLightYieldAttenuation = 0. ;
fRecalibrationFactor = 0. ;
fElectronsPerGeV = 0. ;
- fAPDGain = 0. ;
+ fAPDGain = 0. ;
+ fLightFactor = 0. ;
+ fAPDFactor = 0. ;
}
// The APD Gain is 300
fLightYieldMean = 47000;
fIntrinsicPINEfficiency = 0.02655 ; //APD= 0.1875/0.1271 * 0.018 (PIN)
- fLightYieldAttenuation = 0.0045 ;
- fRecalibrationFactor = 13.418/ fLightYieldMean ;
- fElectronsPerGeV = 2.77e+8 ;
- fAPDGain= 300. ;
+ fLightYieldAttenuation = 0.0045 ;
+ fRecalibrationFactor = 13.418/ fLightYieldMean ;
+ fElectronsPerGeV = 2.77e+8 ;
+ fAPDGain = 300. ;
+ fLightFactor = fLightYieldMean * fIntrinsicPINEfficiency ;
+ fAPDFactor = (fRecalibrationFactor/100.) * fAPDGain ;
+
Int_t nb = GetGeometry()->GetNModules() ;
//Calculates the light yield, the number of photns produced in the
//crystal
- Float_t lightYield = gRandom->Poisson(fLightYieldMean * lostenergy *
- fIntrinsicPINEfficiency *
+ Float_t lightYield = gRandom->Poisson(fLightFactor * lostenergy *
exp(-fLightYieldAttenuation *
(local[1]+GetGeometry()->GetCrystalSize(1)/2.0 ))
) ;
//Calculates de energy deposited in the crystal
- xyze[4] = (fRecalibrationFactor/100.) * fAPDGain * lightYield ;
+ xyze[4] = fAPDFactor * lightYield ;
// add current hit to the hit list
AddHit(fIshunt, primary,tracknumber, absid, xyze);
Float_t fRecalibrationFactor ; // Recalibration factor
Float_t fElectronsPerGeV ; // Number of electrons per GeV created in the PIN by a ionizing particle
Float_t fAPDGain ; // APD Gain
+ Float_t fLightFactor ; //! a calculated factor
+ Float_t fAPDFactor ; //! a calculated factor
ClassDef(AliPHOSv1,1) // Implementation of PHOS manager class for layout EMC+PPSD