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fcf95fc7 | 1 | /************************************************************************** |
2 | * Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. * | |
3 | * * | |
4 | * Author: The ALICE Off-line Project. * | |
5 | * Contributors are mentioned in the code where appropriate. * | |
6 | * * | |
7 | * Permission to use, copy, modify and distribute this software and its * | |
8 | * documentation strictly for non-commercial purposes is hereby granted * | |
9 | * without fee, provided that the above copyright notice appears in all * | |
10 | * copies and that both the copyright notice and this permission notice * | |
11 | * appear in the supporting documentation. The authors make no claims * | |
12 | * about the suitability of this software for any purpose. It is * | |
13 | * provided "as is" without express or implied warranty. * | |
14 | **************************************************************************/ | |
15 | ||
a4005be7 | 16 | /* $Id:$ */ |
fcf95fc7 | 17 | |
18 | ////////////////////////////////////////////////////// | |
19 | // Calibration class for set:ITS // | |
20 | // Specific subdetector implementation is done in // | |
21 | // AliITSCalibrationSPD // | |
22 | // AliITSCalibrationSDD // | |
23 | // AliITSCalibrationSSD // | |
24 | ////////////////////////////////////////////////////// | |
25 | ||
090026bf | 26 | #include <Riostream.h> |
27 | #include <TMath.h> | |
28 | ||
fcf95fc7 | 29 | #include "AliITSCalibration.h" |
154bfd38 | 30 | #include "AliLog.h" |
fcf95fc7 | 31 | |
32 | ClassImp(AliITSCalibration) | |
33 | ||
34 | //______________________________________________________________________ | |
4bfbde86 | 35 | AliITSCalibration::AliITSCalibration(): |
36 | TObject(), | |
37 | fDataType(), | |
38 | fdv(0.000375), | |
39 | fN(0.), | |
40 | fT(300.), | |
41 | fGeVcharge(0.), | |
42 | fResponse(){ | |
43 | // Default Constructor (300 microns and 80 volts) | |
fcf95fc7 | 44 | |
fcf95fc7 | 45 | SetGeVToCharge(); |
46 | fResponse = 0; | |
47 | } | |
48 | //______________________________________________________________________ | |
4bfbde86 | 49 | AliITSCalibration::AliITSCalibration(Double_t thickness): |
50 | TObject(), | |
51 | fDataType(), | |
52 | fdv(0.), | |
53 | fN(0.), | |
54 | fT(300.), | |
55 | fGeVcharge(0.), | |
56 | fResponse(){ | |
fcf95fc7 | 57 | // Default Constructor |
58 | ||
59 | fdv = thickness/80.0; // 80 volts. | |
fcf95fc7 | 60 | SetGeVToCharge(); |
61 | fResponse = 0; | |
62 | } | |
fcf95fc7 | 63 | |
64 | //______________________________________________________________________ | |
154bfd38 | 65 | AliITSCalibration::AliITSCalibration(const AliITSCalibration &ob): |
e56160b8 | 66 | TObject(ob), |
67 | fDataType(ob.fDataType), | |
68 | fdv(ob.fdv), | |
69 | fN(ob.fN), | |
70 | fT(ob.fT), | |
71 | fGeVcharge(ob.fGeVcharge), | |
72 | fResponse(ob.fResponse) | |
154bfd38 | 73 | { |
74 | // Copy constructor | |
154bfd38 | 75 | |
e56160b8 | 76 | } |
77 | /* | |
154bfd38 | 78 | //______________________________________________________________________________ |
79 | AliITSCalibration& AliITSCalibration::operator= (const AliITSCalibration& source) | |
80 | { | |
81 | // Asignment operator | |
154bfd38 | 82 | |
e56160b8 | 83 | this->~AliITSCalibration(); |
84 | new(this) AliITSCalibration(source); | |
85 | return *this; | |
154bfd38 | 86 | |
154bfd38 | 87 | |
154bfd38 | 88 | } |
e56160b8 | 89 | */ |
154bfd38 | 90 | //______________________________________________________________________ |
fcf95fc7 | 91 | Double_t AliITSCalibration::MobilityElectronSiEmp() const { |
92 | // Computes the electron mobility in cm^2/volt-sec. Taken from SILVACO | |
93 | // International ATLAS II, 2D Device Simulation Framework, User Manual | |
94 | // Chapter 5 Equation 5-6. An empirical function for low-field mobiliity | |
95 | // in silicon at different tempeatures. | |
96 | // Inputs: | |
97 | // none. | |
98 | // Output: | |
99 | // none. | |
100 | // Return: | |
101 | // The Mobility of electrons in Si at a give temprature and impurity | |
102 | // concentration. [cm^2/Volt-sec] | |
103 | const Double_t km0 = 55.24; // cm^2/Volt-sec | |
104 | const Double_t km1 = 7.12E+08; // cm^2 (degree K)^2.3 / Volt-sec | |
105 | const Double_t kN0 = 1.072E17; // #/cm^3 | |
106 | const Double_t kT0 = 300.; // degree K. | |
107 | const Double_t keT0 = -2.3; // Power of Temp. | |
108 | const Double_t keT1 = -3.8; // Power of Temp. | |
109 | const Double_t keN = 0.73; // Power of Dopent Consentrations | |
110 | Double_t m; | |
111 | Double_t tT = fT,nN = fN; | |
112 | ||
113 | if(nN<=0.0){ // Simple case. | |
114 | if(tT==300.) return 1350.0; // From Table 5-1 at consentration 1.0E14. | |
115 | m = km1*TMath::Power(tT,keT0); | |
116 | return m; | |
117 | } // if nN<=0.0 | |
118 | m = km1*TMath::Power(tT,keT0) - km0; | |
119 | m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN); | |
120 | m += km0; | |
121 | return m; | |
122 | } | |
123 | //______________________________________________________________________ | |
124 | Double_t AliITSCalibration::MobilityHoleSiEmp() const { | |
125 | // Computes the Hole mobility in cm^2/volt-sec. Taken from SILVACO | |
126 | // International ATLAS II, 2D Device Simulation Framework, User Manual | |
127 | // Chapter 5 Equation 5-7 An empirical function for low-field mobiliity | |
128 | // in silicon at different tempeatures. | |
129 | // Inputs: | |
130 | // none. | |
131 | // Output: | |
132 | // none. | |
133 | // Return: | |
134 | // The Mobility of Hole in Si at a give temprature and impurity | |
135 | // concentration. [cm^2/Volt-sec] | |
136 | const Double_t km0a = 49.74; // cm^2/Volt-sec | |
137 | const Double_t km0b = 49.70; // cm^2/Volt-sec | |
138 | const Double_t km1 = 1.35E+08; // cm^2 (degree K)^2.3 / Volt-sec | |
139 | const Double_t kN0 = 1.606E17; // #/cm^3 | |
140 | const Double_t kT0 = 300.; // degree K. | |
141 | const Double_t keT0 = -2.2; // Power of Temp. | |
142 | const Double_t keT1 = -3.7; // Power of Temp. | |
143 | const Double_t keN = 0.70; // Power of Dopent Consentrations | |
144 | Double_t m; | |
145 | Double_t tT = fT,nN = fN; | |
146 | ||
147 | if(nN<=0.0){ // Simple case. | |
148 | if(tT==300.) return 495.0; // From Table 5-1 at consentration 1.0E14. | |
149 | m = km1*TMath::Power(tT,keT0) + km0a-km0b; | |
150 | return m; | |
151 | } // if nN<=0.0 | |
152 | m = km1*TMath::Power(tT,keT0) - km0b; | |
153 | m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN); | |
154 | m += km0a; | |
155 | return m; | |
156 | } | |
157 | //______________________________________________________________________ | |
158 | Double_t AliITSCalibration::DiffusionCoefficientElectron() const { | |
159 | // Computes the Diffusion coefficient for electrons in cm^2/sec. Taken | |
160 | // from SILVACO International ATLAS II, 2D Device Simulation Framework, | |
161 | // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion | |
162 | // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec. | |
163 | // Inputs: | |
164 | // none. | |
165 | // Output: | |
166 | // none. | |
167 | // Return: | |
168 | // The Diffusion Coefficient of electrons in Si at a give temprature | |
169 | // and impurity concentration. [cm^2/sec] | |
170 | // const Double_t kb = 1.3806503E-23; // Joules/degree K | |
171 | // const Double_t qe = 1.60217646E-19; // Coulumbs. | |
172 | const Double_t kbqe = 8.617342312E-5; // Volt/degree K | |
173 | Double_t m = MobilityElectronSiEmp(); | |
174 | Double_t tT = fT; | |
175 | ||
176 | return m*kbqe*tT; // [cm^2/sec] | |
177 | } | |
178 | //______________________________________________________________________ | |
179 | Double_t AliITSCalibration::DiffusionCoefficientHole() const { | |
180 | // Computes the Diffusion coefficient for Holes in cm^2/sec. Taken | |
181 | // from SILVACO International ATLAS II, 2D Device Simulation Framework, | |
182 | // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion | |
183 | // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec. | |
184 | // Inputs: | |
185 | // none. | |
186 | // Output: | |
187 | // none. | |
188 | // Return: | |
189 | // The Defusion Coefficient of Hole in Si at a give temprature and | |
190 | // impurity concentration. [cm^2/sec] | |
191 | // and impurity concentration. [cm^2/sec] | |
192 | // const Double_t kb = 1.3806503E-23; // Joules/degree K | |
193 | // const Double_t qe = 1.60217646E-19; // Coulumbs. | |
194 | const Double_t kbqe = 8.617342312E-5; // Volt/degree K | |
195 | Double_t m = MobilityHoleSiEmp(); | |
196 | Double_t tT = fT; | |
197 | ||
198 | return m*kbqe*tT; // [cm^2/sec] | |
199 | } | |
200 | //______________________________________________________________________ | |
a4005be7 | 201 | Double_t AliITSCalibration::LorentzAngleHole(Double_t B) const { |
202 | // Computes the Lorentz angle for electrons in Si | |
203 | // Input: magnetic Field in KGauss | |
204 | // Output: Lorentz angle in radians (positive if Bz is positive) | |
205 | // Main Reference: NIM A 497 (2003) 389–396. | |
206 | // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al. | |
207 | // | |
208 | const Double_t krH=0.70; // Hall scattering factor for Hole | |
209 | const Double_t kT0 = 300.; // reference Temperature (degree K). | |
210 | const Double_t kmulow0 = 470.5; // cm^2/Volt-sec | |
211 | const Double_t keT0 = -2.5; // Power of Temp. | |
212 | const Double_t beta0 = 1.213; // beta coeff. at T0=300K | |
213 | const Double_t keT1 = 0.17; // Power of Temp. for beta | |
214 | const Double_t kvsat0 = 8.37E+06; // saturated velocity at T0=300K (cm/sec) | |
215 | const Double_t keT2 = 0.52; // Power of Temp. for vsat | |
216 | Double_t tT = fT; | |
217 | Double_t eE= 1./fdv; | |
218 | Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0); | |
219 | Double_t beta=beta0*TMath::Power(tT/kT0,keT1); | |
220 | Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2); | |
221 | Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta); | |
222 | Double_t angle=TMath::ATan(krH*mu*B*1.E-05); // Conversion Factor | |
223 | return angle; | |
224 | } | |
225 | //______________________________________________________________________ | |
226 | Double_t AliITSCalibration::LorentzAngleElectron(Double_t B) const { | |
227 | // Computes the Lorentz angle for electrons in Si | |
228 | // Input: magnetic Field in KGauss | |
229 | // Output: Lorentz angle in radians (positive if Bz is positive) | |
230 | // Main Reference: NIM A 497 (2003) 389–396. | |
231 | // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al. | |
232 | // | |
233 | const Double_t krH=1.15; // Hall scattering factor for Electron | |
234 | const Double_t kT0 = 300.; // reference Temperature (degree K). | |
235 | const Double_t kmulow0 = 1417.0; // cm^2/Volt-sec | |
236 | const Double_t keT0 = -2.2; // Power of Temp. | |
237 | const Double_t beta0 = 1.109; // beta coeff. at T0=300K | |
238 | const Double_t keT1 = 0.66; // Power of Temp. for beta | |
239 | const Double_t kvsat0 = 1.07E+07; // saturated velocity at T0=300K (cm/sec) | |
240 | const Double_t keT2 = 0.87; // Power of Temp. for vsat | |
241 | Double_t tT = fT; | |
242 | Double_t eE= 1./fdv; | |
243 | Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0); | |
244 | Double_t beta=beta0*TMath::Power(tT/kT0,keT1); | |
245 | Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2); | |
246 | Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta); | |
247 | Double_t angle=TMath::ATan(krH*mu*B*1.E-05); | |
248 | return angle; | |
249 | } | |
250 | //______________________________________________________________________ | |
fcf95fc7 | 251 | Double_t AliITSCalibration::SpeedElectron() const { |
252 | // Computes the average speed for electrons in Si under the low-field | |
253 | // approximation. [cm/sec]. | |
254 | // Inputs: | |
255 | // none. | |
256 | // Output: | |
257 | // none. | |
258 | // Return: | |
259 | // The speed the holes are traveling at due to the low field applied. | |
260 | // [cm/sec] | |
261 | Double_t m = MobilityElectronSiEmp(); | |
262 | ||
263 | return m/fdv; // [cm/sec] | |
264 | } | |
265 | //______________________________________________________________________ | |
266 | Double_t AliITSCalibration::SpeedHole() const { | |
267 | // Computes the average speed for Holes in Si under the low-field | |
268 | // approximation.[cm/sec]. | |
269 | // Inputs: | |
270 | // none. | |
271 | // Output: | |
272 | // none. | |
273 | // Return: | |
274 | // The speed the holes are traveling at due to the low field applied. | |
275 | // [cm/sec] | |
276 | Double_t m = MobilityHoleSiEmp(); | |
277 | ||
278 | return m/fdv; // [cm/sec] | |
279 | } | |
280 | //______________________________________________________________________ | |
281 | Double_t AliITSCalibration::SigmaDiffusion3D(Double_t l) const { | |
282 | // Returns the Gaussian sigma^2 == <x^2+y^2+z^2> [cm^2] due to the | |
283 | // defusion of electrons or holes through a distance l [cm] caused | |
284 | // by an applied voltage v [volt] through a distance d [cm] in any | |
285 | // material at a temperature T [degree K]. The sigma diffusion when | |
286 | // expressed in terms of the distance over which the diffusion | |
287 | // occures, l=time/speed, is independent of the mobility and therefore | |
288 | // the properties of the material. The charge distributions is given by | |
289 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 6Dt where D=mkT/e | |
290 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric | |
291 | // charge. and vel=m*v/d. consiquently sigma^2=6kTdl/ev. | |
292 | // Inputs: | |
293 | // Double_t l Distance the charge has to travel. | |
294 | // Output: | |
295 | // none. | |
296 | // Return: | |
297 | // The Sigma due to the diffution of electrons. [cm] | |
298 | const Double_t kcon = 5.17040258E-04; // == 6k/e [J/col or volts] | |
299 | ||
300 | return TMath::Sqrt(kcon*fT*fdv*l); // [cm] | |
301 | } | |
302 | //______________________________________________________________________ | |
303 | Double_t AliITSCalibration::SigmaDiffusion2D(Double_t l) const { | |
304 | // Returns the Gaussian sigma^2 == <x^2+z^2> [cm^2] due to the defusion | |
305 | // of electrons or holes through a distance l [cm] caused by an applied | |
306 | // voltage v [volt] through a distance d [cm] in any material at a | |
307 | // temperature T [degree K]. The sigma diffusion when expressed in terms | |
308 | // of the distance over which the diffusion occures, l=time/speed, is | |
309 | // independent of the mobility and therefore the properties of the | |
310 | // material. The charge distributions is given by | |
311 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <x^2+z^2> = 4Dt where D=mkT/e | |
312 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric | |
313 | // charge. and vel=m*v/d. consiquently sigma^2=4kTdl/ev. | |
314 | // Inputs: | |
315 | // Double_t l Distance the charge has to travel. | |
316 | // Output: | |
317 | // none. | |
318 | // Return: | |
319 | // The Sigma due to the diffution of electrons. [cm] | |
320 | const Double_t kcon = 3.446935053E-04; // == 4k/e [J/col or volts] | |
321 | ||
322 | return TMath::Sqrt(kcon*fT*fdv*l); // [cm] | |
323 | } | |
324 | //______________________________________________________________________ | |
325 | Double_t AliITSCalibration::SigmaDiffusion1D(Double_t l) const { | |
326 | // Returns the Gaussian sigma^2 == <x^2> [cm^2] due to the defusion | |
327 | // of electrons or holes through a distance l [cm] caused by an applied | |
328 | // voltage v [volt] through a distance d [cm] in any material at a | |
329 | // temperature T [degree K]. The sigma diffusion when expressed in terms | |
330 | // of the distance over which the diffusion occures, l=time/speed, is | |
331 | // independent of the mobility and therefore the properties of the | |
332 | // material. The charge distributions is given by | |
333 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 2Dt where D=mkT/e | |
334 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric | |
335 | // charge. and vel=m*v/d. consiquently sigma^2=2kTdl/ev. | |
336 | // Inputs: | |
337 | // Double_t l Distance the charge has to travel. | |
338 | // Output: | |
339 | // none. | |
340 | // Return: | |
341 | // The Sigma due to the diffution of electrons. [cm] | |
342 | const Double_t kcon = 1.723467527E-04; // == 2k/e [J/col or volts] | |
343 | ||
344 | return TMath::Sqrt(kcon*fT*fdv*l); // [cm] | |
345 | } | |
346 | //---------------------------------------------------------------------- | |
347 | Double_t AliITSCalibration::DepletedRegionThicknessA(Double_t dopCons, | |
348 | Double_t voltage, | |
349 | Double_t elecCharge, | |
350 | Double_t voltBuiltIn)const{ | |
351 | // Computes the thickness of the depleted region in Si due to the | |
352 | // application of an external bias voltage. From the Particle Data | |
353 | // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004) | |
354 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 | |
355 | // July 15 2004, ISSN 0370-2693 page 263. First equation. | |
356 | // Inputs: | |
357 | // Double_t dopCons "N" doping concentration | |
358 | // Double_t voltage "V" external bias voltage | |
359 | // Double_t elecCharge "e" electronic charge | |
360 | // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for | |
361 | // resistivities typically used in detectors) | |
362 | // Output: | |
363 | // none. | |
364 | // Return: | |
365 | // The thickness of the depleted region | |
366 | ||
367 | return TMath::Sqrt(2.0*(voltage+voltBuiltIn)/(dopCons*elecCharge)); | |
368 | } | |
369 | //---------------------------------------------------------------------- | |
370 | Double_t AliITSCalibration::DepletedRegionThicknessB(Double_t resist, | |
371 | Double_t voltage, | |
372 | Double_t mobility, | |
373 | Double_t voltBuiltIn, | |
374 | Double_t dielConst)const{ | |
375 | // Computes the thickness of the depleted region in Si due to the | |
376 | // application of an external bias voltage. From the Particle Data | |
377 | // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004) | |
378 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 | |
379 | // July 15 2004, ISSN 0370-2693 page 263. Second Equation. | |
380 | // Inputs: | |
381 | // Double_t resist "rho" resistivity (typically 1-10 kOhm cm) | |
382 | // Double_t voltage "V" external bias voltage | |
383 | // Double_t mobility "mu" charge carrier mobility | |
384 | // (electons 1350, holes 450 cm^2/V/s) | |
385 | // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for | |
386 | // resistivities typically used in detectors) | |
387 | // Double_t dielConst=1.E-12 "epsilon" dielectric constant = 11.9 * | |
388 | // (permittivity of free space) or ~ 1 pF/cm | |
389 | // Output: | |
390 | // none. | |
391 | // Return: | |
392 | // The thickness of the depleted region | |
393 | ||
394 | return TMath::Sqrt(2.8*resist*mobility*dielConst*(voltage+voltBuiltIn)); | |
395 | } | |
396 | //---------------------------------------------------------------------- | |
397 | Double_t AliITSCalibration::ReverseBiasCurrent(Double_t temp, | |
398 | Double_t revBiasCurT1, | |
399 | Double_t tempT1, | |
400 | Double_t energy)const{ | |
401 | // Computes the temperature dependance of the reverse bias current | |
402 | // of Si detectors. From the Particle Data | |
403 | // Book, 28.8 Silicon semiconductor detectors equation 28.21 (2004) | |
404 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 | |
405 | // July 15 2004, ISSN 0370-2693 page 263. | |
406 | // Inputs: | |
407 | // Double_t temp The temperature at which the current is wanted | |
408 | // Double_t revBiasCurT1 The reference bias current at temp T1 | |
409 | // Double_t tempT1 The temperature correstponding to revBiasCurT1 | |
410 | // Double_t energy=1.2 Some energy [eV] | |
411 | // Output: | |
412 | // none. | |
413 | // Return: | |
414 | // The reverse bias current at the tempeature temp. | |
415 | const Double_t kBoltz = 8.617343E-5; //[eV/K] | |
416 | ||
417 | return revBiasCurT1*(temp*temp/(tempT1*tempT1))* | |
418 | TMath::Exp(-0.5*energy*(tempT1-temp)/(kBoltz*tempT1*temp)); | |
419 | } | |
420 | //---------------------------------------------------------------------- | |
421 | void AliITSCalibration::Print(ostream *os) const { | |
422 | // Standard output format for this class. | |
423 | // Inputs: | |
424 | *os << fdv << " " << fN << " " << fT << " "; | |
425 | *os << fGeVcharge; | |
426 | // printf("%-10.6e %-10.6e %-10.6e %-10.6e \n",fdv,fN,fT,fGeVcharge); | |
427 | return; | |
428 | } | |
429 | //---------------------------------------------------------------------- | |
430 | void AliITSCalibration::Read(istream *is) { | |
431 | // Standard input format for this class. | |
432 | // Inputs: | |
433 | // ostream *is Pointer to the output stream | |
434 | // Outputs: | |
435 | // none: | |
436 | // Return: | |
437 | // none. | |
438 | ||
439 | *is >> fdv >> fN >> fT >> fGeVcharge; | |
440 | return; | |
441 | } | |
442 | //---------------------------------------------------------------------- | |
443 | ||
444 | ostream &operator<<(ostream &os,AliITSCalibration &p){ | |
445 | // Standard output streaming function. | |
446 | // Inputs: | |
447 | // ostream *os Pointer to the output stream | |
448 | // Outputs: | |
449 | // none: | |
450 | // Return: | |
451 | // none. | |
452 | ||
453 | p.Print(&os); | |
454 | return os; | |
455 | } | |
456 | ||
457 | //---------------------------------------------------------------------- | |
458 | istream &operator>>(istream &is,AliITSCalibration &r){ | |
459 | // Standard input streaming function. | |
460 | // Inputs: | |
461 | // ostream *os Pointer to the output stream | |
462 | // Outputs: | |
463 | // none: | |
464 | // Return: | |
465 | // none. | |
466 | ||
467 | r.Read(&is); | |
468 | return is; | |
469 | } | |
470 | //---------------------------------------------------------------------- |