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[u/mrichter/AliRoot.git] / ITS / AliITSCalibration.h
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fcf95fc7 1#ifndef ALIITSCALIBRATION_H
2#define ALIITSCALIBRATION_H
3/* Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
4 * See cxx source for full Copyright notice */
5
6//////////////////////////////////////////////
7// Base ITS calibration class //
8//////////////////////////////////////////////
9
10#include <TObject.h>
11#include <TString.h>
028a3709 12#include "AliLog.h"
fe20e72f 13#include "AliITSresponse.h"
028a3709 14#include "AliITSMapSDD.h"
fcf95fc7 15
16class AliITSsegmentation;
17class TF1;
18class AliITSgeom;
19
20
21/////////////////////////////////////////////
22// //
23// ITS calibration virtual base class //
24/////////////////////////////////////////////
25class AliITSCalibration : public TObject {
26 public:
27 // Default Constructor
28 AliITSCalibration();
29 // Standard Constructor
30 AliITSCalibration(Double_t Thickness);
4bfbde86 31
fcf95fc7 32 // Destructor.
33 virtual ~AliITSCalibration() {;}
34 //
35 // Configuration methods
36 //
37 // fGeVcharge is set by default 3.6e-9 GeV See for ex. PDG 2004.
38 virtual void SetGeVToCharge(Double_t gc=3.6e-9){fGeVcharge = gc;}
39 // Returns the value fGeVcharge
40 virtual Double_t GetGeVToCharge() const {return fGeVcharge;}
41 // Converts deposited energy to number of electrons liberated
42 virtual Double_t GeVToCharge(Double_t gev) const {return gev/fGeVcharge;}
43 // Temperature in [degree K]
44 virtual void SetTemperature(Double_t t=300.0) {fT = t;}
45 // Get temperature [degree K]
46 virtual Double_t Temperature() const {return fT;}
47 // Set the impurity concentrations in [#/cm^3]
48 virtual void SetImpurity(Double_t n=0.0){fN = n;}
49 // Returns the impurity consentration in [#/cm^3]
50 virtual Double_t Impurity() const {return fN;}
51 // Sets the applied ratio distance/voltage [cm/volt]
52 virtual void SetDistanceOverVoltage(Double_t d,Double_t v){fdv = d/v;}
53 // Sets the applied ration distance/voltage [cm/volt]. Default value
54 // is 300E-4cm/80 volts = 0.000375 cm/volts
55 virtual void SetDistanceOverVoltage(Double_t dv=0.000375){fdv = dv;}
56 // Returns the ration distance/voltage
57 virtual Double_t DistanceOverVoltage() const {return fdv;}
58
59 // Get data type
60 virtual const char *DataType() const {return fDataType.Data();}
61 // Type of data - real or simulated
62 virtual void SetDataType(const char *data="simulated") {fDataType=data;}
63 // Set parameters options: "same" or read from "file" or "SetInvalid" or...
64 // virtual void SetParamOptions(const char*,const char*) = 0;
65 // Set noise parameters
66 virtual void SetNoiseParam(Double_t, Double_t) = 0;
67 // Number of parameters to be set
68 virtual void SetNDetParam(Int_t) = 0;
69 // Set detector parameters: gain, coupling ...
70 virtual void SetDetParam(Double_t *) = 0;
71
72 // Parameters options
73 // virtual void ParamOptions(char *,char*) const = 0;
74 virtual Int_t NDetParam() const = 0;
75 virtual void GetDetParam(Double_t *) const = 0;
76 virtual void GetNoiseParam(Double_t&, Double_t&) const = 0;
77 virtual void SetThresholds(Double_t, Double_t) = 0;
78 virtual void Thresholds(Double_t &, Double_t &) const = 0;
028a3709 79 virtual void SetMapA(Int_t, AliITSMapSDD*) {AliError("This method must be implemented in a derived class");}
80 virtual void SetMapT(Int_t, AliITSMapSDD*) {AliError("This method must be implemented in a derived class");}
fcf95fc7 81 virtual Double_t DriftSpeed() const {return SpeedElectron();};
82 // Set sigmas of the charge spread function
83 virtual void SetSigmaSpread(Double_t, Double_t) = 0;
84 // Get sigmas for the charge spread
85 virtual void SigmaSpread(Double_t &,Double_t &) const = 0;
86 // Pulse height from scored quantity (eloss)
87 virtual Double_t IntPH(Double_t) const {return 0.;}
88 // Charge disintegration
89 virtual Double_t IntXZ(AliITSsegmentation *) const {return 0.;}
90 // Electron mobility in Si. [cm^2/(Volt Sec)]. T in degree K, N in #/cm^3
91 virtual Double_t MobilityElectronSiEmp() const ;
92 // Hole mobility in Si. [cm^2/(Volt Sec)] T in degree K, N in #/cm^3
93 virtual Double_t MobilityHoleSiEmp() const ;
94 // Einstein relation for Diffusion Coefficient of Electrons. [cm^2/sec]
95 // T in degree K, N in #/cm^3
96 virtual Double_t DiffusionCoefficientElectron() const ;
97 // Einstein relation for Diffusion Coefficient of Holes. [cm^2/sec]
98 // T in [degree K], N in [#/cm^3]
99 virtual Double_t DiffusionCoefficientHole() const ;
100 // Electron <speed> under an applied electric field E=Volts/cm. [cm/sec]
101 // d distance-thickness in [cm], v in [volts], T in [degree K],
102 // N in [#/cm^3]
103 virtual Double_t SpeedElectron() const ;
104 // Holes <speed> under an applied electric field E=Volts/cm. [cm/sec]
105 // d distance-thickness in [cm], v in [volts], T in [degree K],
106 // N in [#/cm^3]
107 virtual Double_t SpeedHole() const ;
108 // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
109 // electrons or holes through a distance l [cm] caused by an applied
110 // voltage v [volt] through a distance d [cm] in any material at a
111 // temperature T [degree K].
112 virtual Double_t SigmaDiffusion3D(Double_t l) const;
113 // Returns the Gaussian sigma == <x^2 +y^2+z^2> [cm^2] due to the
114 // defusion of electrons or holes through a distance l [cm] caused by an
115 // applied voltage v [volt] through a distance d [cm] in any material at a
116 // temperature T [degree K].
117 virtual Double_t SigmaDiffusion2D(Double_t l) const;
118 // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
119 // electrons or holes through a distance l [cm] caused by an applied
120 // voltage v [volt] through a distance d [cm] in any material at a
121 // temperature T [degree K].
122 virtual Double_t SigmaDiffusion1D(Double_t l) const;
123 // Compute the thickness of the depleted region in a Si detector, version A
124 virtual Double_t DepletedRegionThicknessA(Double_t dopCons,
125 Double_t voltage,
126 Double_t elecCharge,
127 Double_t voltBuiltIn=0.5)const;
128 // Compute the thickness of the depleted region in a Si detector, version B
129 virtual Double_t DepletedRegionThicknessB(Double_t resist,Double_t voltage,
130 Double_t mobility,
131 Double_t voltBuiltIn=0.5,
132 Double_t dielConst=1.E-12)const;
133 // Computes the temperature dependance of the reverse bias current
134 virtual Double_t ReverseBiasCurrent(Double_t temp,Double_t revBiasCurT1,
135 Double_t tempT1,Double_t energy=1.2)const;
136 // Prints out the content of this class in ASCII format.
137 virtual void Print(ostream *os) const;
138 // Reads in the content of this class in the format of Print
139 virtual void Read(istream *is);
140 virtual void Print(Option_t *option="") const {TObject::Print(option);}
141 virtual Int_t Read(const char *name) {return TObject::Read(name);}
142
143 void SetResponse(AliITSresponse* response) {fResponse=response;}
144 AliITSresponse* GetResponse() const {return fResponse;}
145
146 virtual void SetDiffCoeff(Float_t p1, Float_t p2) {fResponse->SetDiffCoeff(p1,p2);}
147 virtual void DiffCoeff(Float_t &diff,Float_t &diff1) const {fResponse->DiffCoeff(diff,diff1);}
148 virtual void SetFilenames(const char *f1="",const char *f2="",
149 const char *f3="") {fResponse->SetFilenames(f1,f2,f3);}
150 virtual void Filenames(char* input,char* baseline,char* param) {fResponse->Filenames(input,baseline,param);}
151 virtual void SetOutputOption(Bool_t write=kFALSE) {fResponse->SetOutputOption(write);}
152 virtual Bool_t OutputOption() const {return fResponse->OutputOption();}
153
154 protected:
4bfbde86 155 AliITSCalibration(const AliITSCalibration &ob); // copy constructor
154bfd38 156 AliITSCalibration& operator=(const AliITSCalibration& source); // ass.
fcf95fc7 157 void NotImplemented(const char *method) const {if(gDebug>0)
158 Warning(method,"This method is not implemented for this sub-class");}
159
160 TString fDataType; // data type - real or simulated
161
162 Double_t fdv; // The parameter d/v where d is the disance over which the
163 // the potential v is applied d/v [cm/volts]
164 Double_t fN; // the impurity consentration of the material in #/cm^3
165 Float_t fT; // The temperature of the Si in Degree K.
166 Double_t fGeVcharge; // Energy to ionize (free an electron) in GeV
167 AliITSresponse* fResponse; //! ptr to base response obj. It is not
168 // deleted here but in AliITSDetTypeSim and AliITSDetTypeRec
169
170 ClassDef(AliITSCalibration,1) // Detector type response virtual base class
171};
172// Input and output function for standard C++ input/output.
173ostream& operator<<(ostream &os,AliITSCalibration &source);
174istream& operator>>(istream &os,AliITSCalibration &source);
175#endif