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fcf95fc7 | 1 | #ifndef ALIITSCALIBRATION_H |
2 | #define ALIITSCALIBRATION_H | |
3 | /* Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. * | |
4 | * See cxx source for full Copyright notice */ | |
5 | ||
6 | ////////////////////////////////////////////// | |
7 | // Base ITS calibration class // | |
8 | ////////////////////////////////////////////// | |
9 | ||
10 | #include <TObject.h> | |
11 | #include <TString.h> | |
028a3709 | 12 | #include "AliLog.h" |
fe20e72f | 13 | #include "AliITSresponse.h" |
028a3709 | 14 | #include "AliITSMapSDD.h" |
18da6e54 | 15 | #include "AliITSDriftSpeedArraySDD.h" |
fcf95fc7 | 16 | |
17 | class AliITSsegmentation; | |
18 | class TF1; | |
19 | class AliITSgeom; | |
20 | ||
21 | ||
22 | ///////////////////////////////////////////// | |
23 | // // | |
24 | // ITS calibration virtual base class // | |
25 | ///////////////////////////////////////////// | |
26 | class AliITSCalibration : public TObject { | |
27 | public: | |
28 | // Default Constructor | |
29 | AliITSCalibration(); | |
30 | // Standard Constructor | |
31 | AliITSCalibration(Double_t Thickness); | |
4bfbde86 | 32 | |
fcf95fc7 | 33 | // Destructor. |
34 | virtual ~AliITSCalibration() {;} | |
35 | // | |
36 | // Configuration methods | |
37 | // | |
38 | // fGeVcharge is set by default 3.6e-9 GeV See for ex. PDG 2004. | |
39 | virtual void SetGeVToCharge(Double_t gc=3.6e-9){fGeVcharge = gc;} | |
40 | // Returns the value fGeVcharge | |
41 | virtual Double_t GetGeVToCharge() const {return fGeVcharge;} | |
42 | // Converts deposited energy to number of electrons liberated | |
43 | virtual Double_t GeVToCharge(Double_t gev) const {return gev/fGeVcharge;} | |
44 | // Temperature in [degree K] | |
45 | virtual void SetTemperature(Double_t t=300.0) {fT = t;} | |
46 | // Get temperature [degree K] | |
47 | virtual Double_t Temperature() const {return fT;} | |
48 | // Set the impurity concentrations in [#/cm^3] | |
49 | virtual void SetImpurity(Double_t n=0.0){fN = n;} | |
50 | // Returns the impurity consentration in [#/cm^3] | |
51 | virtual Double_t Impurity() const {return fN;} | |
52 | // Sets the applied ratio distance/voltage [cm/volt] | |
53 | virtual void SetDistanceOverVoltage(Double_t d,Double_t v){fdv = d/v;} | |
54 | // Sets the applied ration distance/voltage [cm/volt]. Default value | |
55 | // is 300E-4cm/80 volts = 0.000375 cm/volts | |
56 | virtual void SetDistanceOverVoltage(Double_t dv=0.000375){fdv = dv;} | |
57 | // Returns the ration distance/voltage | |
58 | virtual Double_t DistanceOverVoltage() const {return fdv;} | |
59 | ||
60 | // Get data type | |
61 | virtual const char *DataType() const {return fDataType.Data();} | |
62 | // Type of data - real or simulated | |
63 | virtual void SetDataType(const char *data="simulated") {fDataType=data;} | |
64 | // Set parameters options: "same" or read from "file" or "SetInvalid" or... | |
65 | // virtual void SetParamOptions(const char*,const char*) = 0; | |
66 | // Set noise parameters | |
67 | virtual void SetNoiseParam(Double_t, Double_t) = 0; | |
68 | // Number of parameters to be set | |
69 | virtual void SetNDetParam(Int_t) = 0; | |
70 | // Set detector parameters: gain, coupling ... | |
71 | virtual void SetDetParam(Double_t *) = 0; | |
72 | ||
73 | // Parameters options | |
74 | // virtual void ParamOptions(char *,char*) const = 0; | |
75 | virtual Int_t NDetParam() const = 0; | |
76 | virtual void GetDetParam(Double_t *) const = 0; | |
77 | virtual void GetNoiseParam(Double_t&, Double_t&) const = 0; | |
78 | virtual void SetThresholds(Double_t, Double_t) = 0; | |
79 | virtual void Thresholds(Double_t &, Double_t &) const = 0; | |
028a3709 | 80 | virtual void SetMapA(Int_t, AliITSMapSDD*) {AliError("This method must be implemented in a derived class");} |
81 | virtual void SetMapT(Int_t, AliITSMapSDD*) {AliError("This method must be implemented in a derived class");} | |
18da6e54 | 82 | virtual void SetDriftSpeed(Int_t, AliITSDriftSpeedArraySDD*) {AliError("This method must be implemented in a derived class");} |
fcf95fc7 | 83 | virtual Double_t DriftSpeed() const {return SpeedElectron();}; |
84 | // Set sigmas of the charge spread function | |
85 | virtual void SetSigmaSpread(Double_t, Double_t) = 0; | |
86 | // Get sigmas for the charge spread | |
87 | virtual void SigmaSpread(Double_t &,Double_t &) const = 0; | |
88 | // Pulse height from scored quantity (eloss) | |
89 | virtual Double_t IntPH(Double_t) const {return 0.;} | |
90 | // Charge disintegration | |
91 | virtual Double_t IntXZ(AliITSsegmentation *) const {return 0.;} | |
92 | // Electron mobility in Si. [cm^2/(Volt Sec)]. T in degree K, N in #/cm^3 | |
93 | virtual Double_t MobilityElectronSiEmp() const ; | |
94 | // Hole mobility in Si. [cm^2/(Volt Sec)] T in degree K, N in #/cm^3 | |
95 | virtual Double_t MobilityHoleSiEmp() const ; | |
96 | // Einstein relation for Diffusion Coefficient of Electrons. [cm^2/sec] | |
97 | // T in degree K, N in #/cm^3 | |
98 | virtual Double_t DiffusionCoefficientElectron() const ; | |
99 | // Einstein relation for Diffusion Coefficient of Holes. [cm^2/sec] | |
100 | // T in [degree K], N in [#/cm^3] | |
101 | virtual Double_t DiffusionCoefficientHole() const ; | |
102 | // Electron <speed> under an applied electric field E=Volts/cm. [cm/sec] | |
103 | // d distance-thickness in [cm], v in [volts], T in [degree K], | |
104 | // N in [#/cm^3] | |
105 | virtual Double_t SpeedElectron() const ; | |
106 | // Holes <speed> under an applied electric field E=Volts/cm. [cm/sec] | |
107 | // d distance-thickness in [cm], v in [volts], T in [degree K], | |
108 | // N in [#/cm^3] | |
109 | virtual Double_t SpeedHole() const ; | |
110 | // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of | |
111 | // electrons or holes through a distance l [cm] caused by an applied | |
112 | // voltage v [volt] through a distance d [cm] in any material at a | |
113 | // temperature T [degree K]. | |
114 | virtual Double_t SigmaDiffusion3D(Double_t l) const; | |
115 | // Returns the Gaussian sigma == <x^2 +y^2+z^2> [cm^2] due to the | |
116 | // defusion of electrons or holes through a distance l [cm] caused by an | |
117 | // applied voltage v [volt] through a distance d [cm] in any material at a | |
118 | // temperature T [degree K]. | |
119 | virtual Double_t SigmaDiffusion2D(Double_t l) const; | |
120 | // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of | |
121 | // electrons or holes through a distance l [cm] caused by an applied | |
122 | // voltage v [volt] through a distance d [cm] in any material at a | |
123 | // temperature T [degree K]. | |
124 | virtual Double_t SigmaDiffusion1D(Double_t l) const; | |
125 | // Compute the thickness of the depleted region in a Si detector, version A | |
126 | virtual Double_t DepletedRegionThicknessA(Double_t dopCons, | |
127 | Double_t voltage, | |
128 | Double_t elecCharge, | |
129 | Double_t voltBuiltIn=0.5)const; | |
130 | // Compute the thickness of the depleted region in a Si detector, version B | |
131 | virtual Double_t DepletedRegionThicknessB(Double_t resist,Double_t voltage, | |
132 | Double_t mobility, | |
133 | Double_t voltBuiltIn=0.5, | |
134 | Double_t dielConst=1.E-12)const; | |
135 | // Computes the temperature dependance of the reverse bias current | |
136 | virtual Double_t ReverseBiasCurrent(Double_t temp,Double_t revBiasCurT1, | |
137 | Double_t tempT1,Double_t energy=1.2)const; | |
138 | // Prints out the content of this class in ASCII format. | |
139 | virtual void Print(ostream *os) const; | |
140 | // Reads in the content of this class in the format of Print | |
141 | virtual void Read(istream *is); | |
142 | virtual void Print(Option_t *option="") const {TObject::Print(option);} | |
143 | virtual Int_t Read(const char *name) {return TObject::Read(name);} | |
144 | ||
145 | void SetResponse(AliITSresponse* response) {fResponse=response;} | |
146 | AliITSresponse* GetResponse() const {return fResponse;} | |
147 | ||
148 | virtual void SetDiffCoeff(Float_t p1, Float_t p2) {fResponse->SetDiffCoeff(p1,p2);} | |
149 | virtual void DiffCoeff(Float_t &diff,Float_t &diff1) const {fResponse->DiffCoeff(diff,diff1);} | |
150 | virtual void SetFilenames(const char *f1="",const char *f2="", | |
151 | const char *f3="") {fResponse->SetFilenames(f1,f2,f3);} | |
152 | virtual void Filenames(char* input,char* baseline,char* param) {fResponse->Filenames(input,baseline,param);} | |
153 | virtual void SetOutputOption(Bool_t write=kFALSE) {fResponse->SetOutputOption(write);} | |
154 | virtual Bool_t OutputOption() const {return fResponse->OutputOption();} | |
155 | ||
156 | protected: | |
4bfbde86 | 157 | AliITSCalibration(const AliITSCalibration &ob); // copy constructor |
154bfd38 | 158 | AliITSCalibration& operator=(const AliITSCalibration& source); // ass. |
fcf95fc7 | 159 | void NotImplemented(const char *method) const {if(gDebug>0) |
160 | Warning(method,"This method is not implemented for this sub-class");} | |
161 | ||
162 | TString fDataType; // data type - real or simulated | |
163 | ||
164 | Double_t fdv; // The parameter d/v where d is the disance over which the | |
165 | // the potential v is applied d/v [cm/volts] | |
166 | Double_t fN; // the impurity consentration of the material in #/cm^3 | |
167 | Float_t fT; // The temperature of the Si in Degree K. | |
168 | Double_t fGeVcharge; // Energy to ionize (free an electron) in GeV | |
169 | AliITSresponse* fResponse; //! ptr to base response obj. It is not | |
170 | // deleted here but in AliITSDetTypeSim and AliITSDetTypeRec | |
171 | ||
172 | ClassDef(AliITSCalibration,1) // Detector type response virtual base class | |
173 | }; | |
174 | // Input and output function for standard C++ input/output. | |
175 | ostream& operator<<(ostream &os,AliITSCalibration &source); | |
176 | istream& operator>>(istream &os,AliITSCalibration &source); | |
177 | #endif |