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409f8c84 | 1 | #ifndef ALIITSRESPONSESPDDUBNA_H |
2 | #define ALIITSRESPONSESPDDUBNA_H | |
3 | ||
4 | #include "AliITSresponse.h" | |
5 | #include <TString.h> | |
6 | ||
7 | //---------------------------------------------- | |
8 | // | |
9 | // ITS response class for SPD | |
10 | // | |
f74211b0 | 11 | class AliITSresponseSPDdubna : public AliITSresponse { |
12 | public: | |
13 | AliITSresponseSPDdubna(); | |
14 | virtual ~AliITSresponseSPDdubna() { | |
15 | // destructror | |
16 | } | |
17 | // | |
18 | // Configuration methods | |
19 | // | |
20 | virtual void SetDiffCoeff(Float_t p1=7.877e-3/*0.00433*/,Float_t dummy=0.) { | |
21 | // Diffusion coefficient | |
22 | fDiffCoeff = p1; | |
23 | } | |
24 | virtual Double_t DiffusionSigma(Double_t dy); | |
25 | virtual void DiffCoeff(Float_t &diffc,Float_t &dummy) { | |
26 | // Get diffusion coefficient | |
27 | diffc= fDiffCoeff; | |
28 | } | |
29 | virtual void SetNoiseParam(Float_t n=200., Float_t b=0.) { | |
30 | // set noise and baseline | |
31 | fNoise=n; fBaseline=b; | |
32 | } | |
33 | virtual void GetNoiseParam(Float_t &n, Float_t &b) { | |
34 | // get noise and baseline | |
35 | n=fNoise; b=fBaseline; | |
36 | } | |
37 | virtual void SetMinVal(Int_t p1=2000) { | |
38 | // Zero-suppression option threshold | |
39 | fThreshold=p1; | |
40 | } | |
41 | virtual Int_t MinVal() { | |
42 | // Get zero-suppression threshold | |
43 | return fThreshold; | |
44 | } | |
45 | virtual void SetDataType(const char *data="simulated") { | |
46 | // Type of data - real or simulated | |
47 | fDataType=data; | |
48 | } | |
49 | virtual const char *DataType() const { | |
50 | // Get data typer | |
51 | return fDataType.Data(); | |
52 | } | |
53 | virtual void SetGeVToCharge(Float_t e = 2.778E+08) { | |
54 | // sets the conversion factor to go from Energy GeV to charge | |
55 | // (electrons). | |
56 | fGeVtoElec = e; | |
57 | } | |
58 | virtual Float_t GetGeVToCharge() { | |
59 | // Returns the conversion factor to go from Energy GeV to charge | |
60 | // (electrons). | |
61 | return fGeVtoElec; | |
62 | } | |
63 | virtual const Float_t GeVToCharge(Float_t e) const { | |
64 | // Converts deposited energy into electrons in Si. | |
65 | return e*fGeVtoElec; | |
66 | } | |
67 | ||
68 | protected: | |
69 | Float_t fDiffCoeff; // Diffusion Coefficient | |
70 | Float_t fNoise; // Noise value | |
71 | Float_t fBaseline; // Baseline value | |
72 | Int_t fThreshold; // Zero-Suppression threshold | |
73 | Float_t fGeVtoElec; // Conversion factor from GeV to electons | |
74 | TString fDataType; // Type of data - real or simulated | |
409f8c84 | 75 | |
f74211b0 | 76 | ClassDef(AliITSresponseSPDdubna,2) // SPD response |
77 | }; | |
409f8c84 | 78 | #endif |