[u/mrichter/AliRoot.git] / PHOS / AliPHOSv3.cxx

/**************************************************************************
 * Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
 *                                                                        *
 * Author: The ALICE Off-line Project.                                    *
 * Contributors are mentioned in the code where appropriate.              *
 *                                                                        *
 * Permission to use, copy, modify and distribute this software and its   *
 * documentation strictly for non-commercial purposes is hereby granted   *
 * without fee, provided that the above copyright notice appears in all   *
 * copies and that both the copyright notice and this permission notice   *
 * appear in the supporting documentation. The authors make no claims     *
 * about the suitability of this software for any purpose. It is          *
 * provided "as is" without express or implied warranty.                  *
 **************************************************************************/

/* $Id$ */

//_________________________________________________________________________
// Implementation version v0 of PHOS Manager class 
// Layout EMC + PPSD has name GPS2  
// The main goal of this version of AliPHOS is to calculte the 
//  induced charged in the PIN diode, taking into account light
//  tracking in the PbWO4 crystal, induced signal in the 
//  PIN due to MIPS particle and electronic noise.
// This is done in the StepManager 
//                  
//*-- Author:  Odd Harald Oddland & Gines Martinez (SUBATECH)


// --- ROOT system ---
#include "TRandom.h"

// --- Standard library ---

#include <stdio.h>
#include <string.h>
#include <stdlib.h>
#include <strstream.h>

// --- AliRoot header files ---

#include "AliPHOSv3.h"
#include "AliPHOSHit.h"
#include "AliPHOSDigit.h"
#include "AliRun.h"
#include "AliConst.h"

ClassImp(AliPHOSv3)

//____________________________________________________________________________
AliPHOSv3::AliPHOSv3(const char *name, const char *title):
  AliPHOSv1(name,title)
{
  // ctor 

  // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using 
  // following formula
  // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency * 
  //                     exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
  //                     RecalibrationFactor ;
  // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
  // PINEfficiency is 0.1875 from Odd Harald Odland work
  // k_0 is 0.0045 from Valery Antonenko 

  fLightYieldMean = 700000. ;
  fIntrinsicPINEfficiency = 0.1875 ;
  fLightYieldAttenuation = 0.0045 ;
  fRecalibrationFactor = 6.2 / fLightYieldMean ;
  fElectronsPerGeV = 2.77e+8 ; 
}

//____________________________________________________________________________
AliPHOSv3::AliPHOSv3(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title):
  AliPHOSv1(Reconstructioner,name,title)
{
  // ctor 

  // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using 
  // following formula
  // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency * 
  //                     exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
  //                     RecalibrationFactor ;
  // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
  // PINEfficiency is 0.1875 from Odd Harald Odland work
  // k_0 is 0.0045 from Valery Antonenko 

  fLightYieldMean = 700000.;
  fIntrinsicPINEfficiency = 0.1875 ;
  fLightYieldAttenuation = 0.0045 ;
  fRecalibrationFactor = 6.2 / fLightYieldMean ;
  fElectronsPerGeV = 2.77e+8 ;
}

//____________________________________________________________________________
void AliPHOSv3::StepManager(void)
{
  // Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell
  // Adds the energy deposited in the PIN diode

  Int_t          relid[4] ;      // (box, layer, row, column) indices
  Float_t        xyze[4] ;       // position wrt MRS and energy deposited
  TLorentzVector pos ;
  Int_t copy;
  Float_t        lightyield ;   // Light Yield per GeV
  Float_t        nElectrons ;   // Number of electrons in the PIN diode
  TString name = fGeom->GetName() ; 
  Float_t        global[3] ;
  Float_t        local[3] ;
  Float_t        lostenergy ;

  Int_t tracknumber =  gAlice->CurrentTrack() ; 
  Int_t primary =  gAlice->GetPrimary( gAlice->CurrentTrack() ); 

  if ( name == "GPS2" ) { // the CPV is a PPSD
    if( gMC->CurrentVolID(copy) == gMC->VolId("GCEL") ) // We are inside a gas cell 
    {
      gMC->TrackPosition(pos) ;
      xyze[0] = pos[0] ;
      xyze[1] = pos[1] ;
      xyze[2] = pos[2] ;
      xyze[3] = gMC->Edep() ;


      if ( xyze[3] != 0 ) { // there is deposited energy 
       	gMC->CurrentVolOffID(5, relid[0]) ;  // get the PHOS Module number
       	gMC->CurrentVolOffID(3, relid[1]) ;  // get the Micromegas Module number 
      // 1-> Geom->GetNumberOfModulesPhi() *  fGeom->GetNumberOfModulesZ() upper                         
      //  >  fGeom->GetNumberOfModulesPhi()  *  fGeom->GetNumberOfModulesZ() lower
       	gMC->CurrentVolOffID(1, relid[2]) ;  // get the row number of the cell
        gMC->CurrentVolID(relid[3]) ;        // get the column number 

	// get the absolute Id number

	Int_t absid ; 
       	fGeom->RelToAbsNumbering(relid,absid) ; 
	

	AddHit(fIshunt, primary, tracknumber, absid, xyze);

      } // there is deposited energy 
     } // We are inside the gas of the CPV  
   } // GPS2 configuration
  
  if(gMC->CurrentVolID(copy) == gMC->VolId("PXTL") )//  We are inside a PBWO crystal 
     {
       gMC->TrackPosition(pos) ;
       xyze[0] = pos[0] ;
       xyze[1] = pos[1] ;
       xyze[2] = pos[2] ;
       lostenergy = gMC->Edep() ; 
       xyze[3] = gMC->Edep() ;

       global[0] = pos[0] ;
       global[1] = pos[1] ;
       global[2] = pos[2] ;

       if ( xyze[3] != 0 ) {
          gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ;
          relid[1] = 0   ;                    // means PW04
          gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module
          gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module

      // get the absolute Id number

          Int_t absid ; 
          fGeom->RelToAbsNumbering(relid,absid) ; 
	  gMC->Gmtod(global, local, 1) ;
	  
	  // calculating number of electrons in the PIN diode asociated to this hit
	  lightyield = gRandom->Poisson(fLightYieldMean) ;
	  nElectrons = lostenergy * lightyield * fIntrinsicPINEfficiency *
	    exp(-fLightYieldAttenuation * (local[1]+fGeom->GetCrystalSize(1)/2.0 ) ) ;

	  xyze[3] = nElectrons * fRecalibrationFactor ;
	  // add current hit to the hit list
	  AddHit(fIshunt, primary, tracknumber, absid, xyze);

       } // there is deposited energy
    } // we are inside a PHOS Xtal

   if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN") ) // We are inside de PIN diode 
     {
       gMC->TrackPosition(pos) ;
       xyze[0] = pos[0] ;
       xyze[1] = pos[1] ;
       xyze[2] = pos[2] ;
       lostenergy = gMC->Edep() ;
       xyze[3] = gMC->Edep() ;

       if ( xyze[3] != 0 ) {
          gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
          relid[1] = 0   ;                    // means PW04 and PIN
          gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
          gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module

      // get the absolute Id number

          Int_t absid ; 
          fGeom->RelToAbsNumbering(relid,absid) ;
	  
	  // calculating number of electrons in the PIN diode asociated to this hit
	  nElectrons = lostenergy * fElectronsPerGeV ;
	  xyze[3] = nElectrons * fRecalibrationFactor ;

	  // add current hit to the hit list
	  AddHit(fIshunt, primary, tracknumber, absid, xyze);
	  //printf("PIN volume is  %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]);
	  //printf("Lost energy in the PIN is %f \n",lostenergy) ;
       } // there is deposited energy
    } // we are inside a PHOS XtalPHOS PIN diode
}
Commit	Line	Data
5f20d3fb	1	/**************************************************************************
	2	* Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
	3	* *
	4	* Author: The ALICE Off-line Project. *
	5	* Contributors are mentioned in the code where appropriate. *
	6	* *
	7	* Permission to use, copy, modify and distribute this software and its *
	8	* documentation strictly for non-commercial purposes is hereby granted *
	9	* without fee, provided that the above copyright notice appears in all *
	10	* copies and that both the copyright notice and this permission notice *
	11	* appear in the supporting documentation. The authors make no claims *
	12	* about the suitability of this software for any purpose. It is *
	13	* provided "as is" without express or implied warranty. *
	14	**************************************************************************/
	15
	16	/* $Id$ */
	17
	18	//_________________________________________________________________________
	19	// Implementation version v0 of PHOS Manager class
	20	// Layout EMC + PPSD has name GPS2
	21	// The main goal of this version of AliPHOS is to calculte the
	22	// induced charged in the PIN diode, taking into account light
	23	// tracking in the PbWO4 crystal, induced signal in the
	24	// PIN due to MIPS particle and electronic noise.
	25	// This is done in the StepManager
	26	//
	27	//*-- Author: Odd Harald Oddland & Gines Martinez (SUBATECH)
	28
	29
	30	// --- ROOT system ---
	31	#include "TRandom.h"
	32
	33	// --- Standard library ---
	34
	35	#include <stdio.h>
	36	#include <string.h>
	37	#include <stdlib.h>
	38	#include <strstream.h>
	39
	40	// --- AliRoot header files ---
	41
	42	#include "AliPHOSv3.h"
	43	#include "AliPHOSHit.h"
	44	#include "AliPHOSDigit.h"
	45	#include "AliRun.h"
	46	#include "AliConst.h"
	47
	48	ClassImp(AliPHOSv3)
	49
	50	//____________________________________________________________________________
	51	AliPHOSv3::AliPHOSv3(const char name, const char title):
	52	AliPHOSv1(name,title)
	53	{
	54	// ctor
	55
	56	// Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
	57	// following formula
	58	// NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
	59	// exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
	60	// RecalibrationFactor ;
	61	// LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
	62	// PINEfficiency is 0.1875 from Odd Harald Odland work
	63	// k_0 is 0.0045 from Valery Antonenko
	64
65	fLightYieldMean = 700000. ;
66	fIntrinsicPINEfficiency = 0.1875 ;
67	fLightYieldAttenuation = 0.0045 ;
68	fRecalibrationFactor = 6.2 / fLightYieldMean ;
69	fElectronsPerGeV = 2.77e+8 ;
70	}
71
72	//____________________________________________________________________________
73	AliPHOSv3::AliPHOSv3(AliPHOSReconstructioner * Reconstructioner, const char name, const char title):
74	AliPHOSv1(Reconstructioner,name,title)
75	{
76	// ctor
77
78	// Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
79	// following formula
80	// NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
81	// exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
82	// RecalibrationFactor ;
83	// LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
84	// PINEfficiency is 0.1875 from Odd Harald Odland work
85	// k_0 is 0.0045 from Valery Antonenko
86
87	fLightYieldMean = 700000.;
88	fIntrinsicPINEfficiency = 0.1875 ;
89	fLightYieldAttenuation = 0.0045 ;
90	fRecalibrationFactor = 6.2 / fLightYieldMean ;
91	fElectronsPerGeV = 2.77e+8 ;
92	}
93
94	//____________________________________________________________________________
95	void AliPHOSv3::StepManager(void)
96	{
97	// Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell
98	// Adds the energy deposited in the PIN diode
99
100	Int_t relid[4] ; // (box, layer, row, column) indices
101	Float_t xyze[4] ; // position wrt MRS and energy deposited
102	TLorentzVector pos ;
103	Int_t copy;
104	Float_t lightyield ; // Light Yield per GeV
105	Float_t nElectrons ; // Number of electrons in the PIN diode
106	TString name = fGeom->GetName() ;
107	Float_t global[3] ;
108	Float_t local[3] ;
109	Float_t lostenergy ;
110
111	Int_t tracknumber = gAlice->CurrentTrack() ;
112	Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() );
113
114	if ( name == "GPS2" ) { // the CPV is a PPSD
115	if( gMC->CurrentVolID(copy) == gMC->VolId("GCEL") ) // We are inside a gas cell
116	{
117	gMC->TrackPosition(pos) ;
118	xyze[0] = pos[0] ;
119	xyze[1] = pos[1] ;
120	xyze[2] = pos[2] ;
121	xyze[3] = gMC->Edep() ;
122
123
124	if ( xyze[3] != 0 ) { // there is deposited energy
125	gMC->CurrentVolOffID(5, relid[0]) ; // get the PHOS Module number
126	gMC->CurrentVolOffID(3, relid[1]) ; // get the Micromegas Module number
127	// 1-> Geom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() upper
128	// > fGeom->GetNumberOfModulesPhi() * fGeom->GetNumberOfModulesZ() lower
129	gMC->CurrentVolOffID(1, relid[2]) ; // get the row number of the cell
130	gMC->CurrentVolID(relid[3]) ; // get the column number
131
132	// get the absolute Id number
133
134	Int_t absid ;
135	fGeom->RelToAbsNumbering(relid,absid) ;
136
137
138	AddHit(fIshunt, primary, tracknumber, absid, xyze);
139
140	} // there is deposited energy
141	} // We are inside the gas of the CPV
142	} // GPS2 configuration
143
144	if(gMC->CurrentVolID(copy) == gMC->VolId("PXTL") )// We are inside a PBWO crystal
145	{
146	gMC->TrackPosition(pos) ;
147	xyze[0] = pos[0] ;
148	xyze[1] = pos[1] ;
149	xyze[2] = pos[2] ;
150	lostenergy = gMC->Edep() ;
151	xyze[3] = gMC->Edep() ;
152
153	global[0] = pos[0] ;
154	global[1] = pos[1] ;
155	global[2] = pos[2] ;
156
157	if ( xyze[3] != 0 ) {
158	gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ;
159	relid[1] = 0 ; // means PW04
160	gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module
161	gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module
162
163	// get the absolute Id number
164
165	Int_t absid ;
166	fGeom->RelToAbsNumbering(relid,absid) ;
167	gMC->Gmtod(global, local, 1) ;
168
169	// calculating number of electrons in the PIN diode asociated to this hit
170	lightyield = gRandom->Poisson(fLightYieldMean) ;
171	nElectrons = lostenergy * lightyield * fIntrinsicPINEfficiency *
172	exp(-fLightYieldAttenuation * (local[1]+fGeom->GetCrystalSize(1)/2.0 ) ) ;
173
174	xyze[3] = nElectrons * fRecalibrationFactor ;
175	// add current hit to the hit list
176	AddHit(fIshunt, primary, tracknumber, absid, xyze);
177
178	} // there is deposited energy
179	} // we are inside a PHOS Xtal
180
181	if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN") ) // We are inside de PIN diode
182	{
183	gMC->TrackPosition(pos) ;
184	xyze[0] = pos[0] ;
185	xyze[1] = pos[1] ;
186	xyze[2] = pos[2] ;
187	lostenergy = gMC->Edep() ;
188	xyze[3] = gMC->Edep() ;
189
190	if ( xyze[3] != 0 ) {
191	gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
192	relid[1] = 0 ; // means PW04 and PIN
193	gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
194	gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module
195
196	// get the absolute Id number
197
198	Int_t absid ;
199	fGeom->RelToAbsNumbering(relid,absid) ;
200
201	// calculating number of electrons in the PIN diode asociated to this hit
202	nElectrons = lostenergy * fElectronsPerGeV ;
203	xyze[3] = nElectrons * fRecalibrationFactor ;
204
205	// add current hit to the hit list
206	AddHit(fIshunt, primary, tracknumber, absid, xyze);
207	//printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]);
208	//printf("Lost energy in the PIN is %f \n",lostenergy) ;
209	} // there is deposited energy
210	} // we are inside a PHOS XtalPHOS PIN diode
211	}