| | 1 | /************************************************************************** |
| | 2 | * Copyright(c) 2007-2009, ALICE Experiment at CERN, All rights reserved. * |
| | 3 | * * |
| | 4 | * Author: The ALICE Off-line Project. * |
| | 5 | * Contributors are mentioned in the code where appropriate. * |
| | 6 | * * |
| | 7 | * Permission to use, copy, modify and distribute this software and its * |
| | 8 | * documentation strictly for non-commercial purposes is hereby granted * |
| | 9 | * without fee, provided that the above copyright notice appears in all * |
| | 10 | * copies and that both the copyright notice and this permission notice * |
| | 11 | * appear in the supporting documentation. The authors make no claims * |
| | 12 | * about the suitability of this software for any purpose. It is * |
| | 13 | * provided "as is" without express or implied warranty. * |
| | 14 | **************************************************************************/ |
| | 15 | |
| | 16 | /* $Id$ */ |
| | 17 | |
| | 18 | /////////////////////////////////////////////////////////////////// |
| | 19 | // // |
| | 20 | // Implementation of the class to store the parameters used in // |
| | 21 | // the simulation of SPD, SDD and SSD detectors // |
| | 22 | // Origin: F.Prino, Torino, prino@to.infn.it // |
| | 23 | // // |
| | 24 | /////////////////////////////////////////////////////////////////// |
| | 25 | |
| | 26 | #include "AliITSSimuParam.h" |
| | 27 | #include <TMath.h> |
| | 28 | |
| | 29 | const Float_t AliITSSimuParam::fgkSPDBiasVoltageDefault = 18.182; |
| | 30 | const Double_t AliITSSimuParam::fgkSPDThreshDefault = 3000.; |
| | 31 | const Double_t AliITSSimuParam::fgkSPDSigmaDefault = 250.; |
| | 32 | const TString AliITSSimuParam::fgkSPDCouplingOptDefault = "old"; |
| | 33 | const Double_t AliITSSimuParam::fgkSPDCouplColDefault = 0.; |
| | 34 | const Double_t AliITSSimuParam::fgkSPDCouplRowDefault = 0.055; |
| | 35 | const Float_t AliITSSimuParam::fgkSPDEccDiffDefault = 0.85; |
| | 36 | const Float_t AliITSSimuParam::fgkSPDLorentzHoleWeightDefault = 1.0; |
| | 37 | const Float_t AliITSSimuParam::fgkSDDDiffCoeffDefault = 3.23; |
| | 38 | const Float_t AliITSSimuParam::fgkSDDDiffCoeff1Default = 30.; |
| | 39 | const Float_t AliITSSimuParam::fgkSDDJitterErrorDefault = 20.; // 20 um from beam test 2001 |
| | 40 | const Float_t AliITSSimuParam::fgkSDDDynamicRangeDefault = 1400./2.5; // mV/MOhm = nA |
| | 41 | const Int_t AliITSSimuParam::fgkSDDMaxAdcDefault = 1024; |
| | 42 | const Float_t AliITSSimuParam::fgkSDDChargeLossDefault = 0.; |
| | 43 | const Float_t AliITSSimuParam::fgkSDDTrigDelayDefault = 54.3; |
| | 44 | const Double_t AliITSSimuParam::fgkSSDCouplingPRDefault = 0.01; |
| | 45 | const Double_t AliITSSimuParam::fgkSSDCouplingPLDefault = 0.01; |
| | 46 | const Double_t AliITSSimuParam::fgkSSDCouplingNRDefault = 0.01; |
| | 47 | const Double_t AliITSSimuParam::fgkSSDCouplingNLDefault = 0.01; |
| | 48 | const Int_t AliITSSimuParam::fgkSSDZSThresholdDefault = 3; |
| | 49 | |
| | 50 | const Float_t AliITSSimuParam::fgkNsigmasDefault = 3.; |
| | 51 | const Int_t AliITSSimuParam::fgkNcompsDefault = 121; |
| | 52 | |
| | 53 | ClassImp(AliITSSimuParam) |
| | 54 | |
| | 55 | //______________________________________________________________________ |
| | 56 | AliITSSimuParam::AliITSSimuParam(): |
| | 57 | TObject(), |
| | 58 | fGeVcharge(0.), |
| | 59 | fDOverV(0.), |
| | 60 | //fSPDBiasVoltage(fgkSPDBiasVoltageDefault), |
| | 61 | //fSPDThresh(fgkSPDThreshDefault), |
| | 62 | //fSPDSigma(fgkSPDSigmaDefault), |
| | 63 | fSPDCouplOpt(0), |
| | 64 | fSPDCouplCol(fgkSPDCouplColDefault), |
| | 65 | fSPDCouplRow(fgkSPDCouplRowDefault), |
| | 66 | fSPDEccDiff(0.), |
| | 67 | fSPDLorentzDrift(kTRUE), |
| | 68 | fSPDLorentzHoleWeight(fgkSPDLorentzHoleWeightDefault), |
| | 69 | fSPDAddNoisyFlag(kFALSE), |
| | 70 | fSPDRemoveDeadFlag(kFALSE), |
| | 71 | fSDDElectronics(0), |
| | 72 | fSDDDiffCoeff(0.), |
| | 73 | fSDDDiffCoeff1(0.), |
| | 74 | fSDDJitterError(fgkSDDJitterErrorDefault), |
| | 75 | fSDDDynamicRange(fgkSDDDynamicRangeDefault), |
| | 76 | fSDDMaxAdc(0.), |
| | 77 | fSDDChargeLoss(fgkSDDChargeLossDefault), |
| | 78 | fSDDTrigDelay(fgkSDDTrigDelayDefault), |
| | 79 | fSDDRawFormat(7), |
| | 80 | fSSDLorentzDrift(kTRUE), |
| | 81 | fSSDCouplingPR(0), |
| | 82 | fSSDCouplingPL(0), |
| | 83 | fSSDCouplingNR(0), |
| | 84 | fSSDCouplingNL(0), |
| | 85 | fSSDZSThreshold(fgkSSDZSThresholdDefault), |
| | 86 | fNsigmas(fgkNsigmasDefault), |
| | 87 | fNcomps(fgkNcompsDefault), |
| | 88 | fGaus(), |
| | 89 | fN(0.), |
| | 90 | fT(300.) |
| | 91 | { |
| | 92 | // default constructor |
| | 93 | SetSPDBiasVoltageAll(fgkSPDBiasVoltageDefault); |
| | 94 | SetSPDThresholdsAll(fgkSPDThreshDefault,fgkSPDSigmaDefault); |
| | 95 | SetSPDNoiseAll(0,0); |
| | 96 | SetGeVToCharge(); |
| | 97 | SetDistanceOverVoltage(); |
| | 98 | SetSPDCouplingOption(fgkSPDCouplingOptDefault); |
| | 99 | SetSPDSigmaDiffusionAsymmetry(fgkSPDEccDiffDefault); |
| | 100 | SetSDDElectronics(); |
| | 101 | SetSDDDiffCoeff(fgkSDDDiffCoeffDefault,fgkSDDDiffCoeff1Default); |
| | 102 | SetSDDMaxAdc((Double_t)fgkSDDMaxAdcDefault); |
| | 103 | SetSSDCouplings(fgkSSDCouplingPRDefault,fgkSSDCouplingPLDefault,fgkSSDCouplingNRDefault,fgkSSDCouplingNLDefault); |
| | 104 | } |
| | 105 | //______________________________________________________________________ |
| | 106 | AliITSSimuParam::AliITSSimuParam(const AliITSSimuParam &simpar): |
| | 107 | TObject(), |
| | 108 | fGeVcharge(simpar.fGeVcharge), |
| | 109 | fDOverV(simpar.fDOverV), |
| | 110 | //fSPDBiasVoltage(simpar.fSPDBiasVoltage), |
| | 111 | //fSPDThresh(simpar.fSPDThresh), |
| | 112 | //fSPDSigma(simpar.fSPDSigma), |
| | 113 | fSPDCouplOpt(simpar.fSPDCouplOpt), |
| | 114 | fSPDCouplCol(simpar.fSPDCouplCol), |
| | 115 | fSPDCouplRow(simpar.fSPDCouplRow), |
| | 116 | fSPDEccDiff(simpar.fSPDEccDiff), |
| | 117 | fSPDLorentzDrift(simpar.fSPDLorentzDrift), |
| | 118 | fSPDLorentzHoleWeight(simpar.fSPDLorentzHoleWeight), |
| | 119 | fSPDAddNoisyFlag(simpar.fSPDAddNoisyFlag), |
| | 120 | fSPDRemoveDeadFlag(simpar.fSPDRemoveDeadFlag), |
| | 121 | fSDDElectronics(simpar.fSDDElectronics), |
| | 122 | fSDDDiffCoeff(simpar.fSDDDiffCoeff), |
| | 123 | fSDDDiffCoeff1(simpar.fSDDDiffCoeff1), |
| | 124 | fSDDJitterError(simpar.fSDDJitterError), |
| | 125 | fSDDDynamicRange(simpar.fSDDDynamicRange), |
| | 126 | fSDDMaxAdc(simpar.fSDDMaxAdc), |
| | 127 | fSDDChargeLoss(simpar.fSDDChargeLoss), |
| | 128 | fSDDTrigDelay(simpar.fSDDTrigDelay), |
| | 129 | fSDDRawFormat(simpar.fSDDRawFormat), |
| | 130 | fSSDLorentzDrift(simpar.fSSDLorentzDrift), |
| | 131 | fSSDCouplingPR(simpar.fSSDCouplingPR), |
| | 132 | fSSDCouplingPL(simpar.fSSDCouplingPL), |
| | 133 | fSSDCouplingNR(simpar.fSSDCouplingNR), |
| | 134 | fSSDCouplingNL(simpar.fSSDCouplingNL), |
| | 135 | fSSDZSThreshold(simpar.fSSDZSThreshold), |
| | 136 | fNsigmas(simpar.fNsigmas), |
| | 137 | fNcomps(simpar.fNcomps), |
| | 138 | fGaus(), |
| | 139 | fN(simpar.fN), |
| | 140 | fT(simpar.fT){ |
| | 141 | // copy constructor |
| | 142 | for (Int_t i=0;i<240;i++) { |
| | 143 | fSPDBiasVoltage[i]=simpar.fSPDBiasVoltage[i]; |
| | 144 | fSPDThresh[i]=simpar.fSPDThresh[i]; |
| | 145 | fSPDSigma[i]=simpar.fSPDSigma[i]; |
| | 146 | fSPDNoise[i]=simpar.fSPDNoise[i]; |
| | 147 | fSPDBaseline[i]=simpar.fSPDBaseline[i]; |
| | 148 | } |
| | 149 | } |
| | 150 | |
| | 151 | //______________________________________________________________________ |
| | 152 | AliITSSimuParam& AliITSSimuParam::operator=(const AliITSSimuParam& source){ |
| | 153 | // Assignment operator. |
| | 154 | this->~AliITSSimuParam(); |
| | 155 | new(this) AliITSSimuParam(source); |
| | 156 | return *this; |
| | 157 | |
| | 158 | } |
| | 159 | |
| | 160 | |
| | 161 | //______________________________________________________________________ |
| | 162 | AliITSSimuParam::~AliITSSimuParam() { |
| | 163 | // destructor |
| | 164 | if(fGaus) delete fGaus; |
| | 165 | } |
| | 166 | //________________________________________________________________________ |
| | 167 | void AliITSSimuParam::SetNLookUp(Int_t p1){ |
| | 168 | // Set number of sigmas over which cluster disintegration is performed |
| | 169 | fNcomps=p1; |
| | 170 | if (fGaus) delete fGaus; |
| | 171 | fGaus = new TArrayF(fNcomps+1); |
| | 172 | for(Int_t i=0; i<=fNcomps; i++) { |
| | 173 | Float_t x = -fNsigmas + (2.*i*fNsigmas)/(fNcomps-1); |
| | 174 | (*fGaus)[i] = exp(-((x*x)/2)); |
| | 175 | } |
| | 176 | } |
| | 177 | //________________________________________________________________________ |
| | 178 | void AliITSSimuParam::PrintParameters() const{ |
| | 179 | printf("GeVToCharge = %G\n",fGeVcharge); |
| | 180 | printf("DistanveOverVoltage = %f \n",fDOverV); |
| | 181 | printf("\n"); |
| | 182 | printf("===== SPD parameters =====\n"); |
| | 183 | printf("Bias Voltage = %f \n",fSPDBiasVoltage[0]); |
| | 184 | printf("Threshold and sigma = %f %f\n",fSPDThresh[0],fSPDSigma[0]); |
| | 185 | printf("Coupling Option = %s\n",fSPDCouplOpt.Data()); |
| | 186 | printf("Coupling value (column) = %f\n",fSPDCouplCol); |
| | 187 | printf("Coupling value (row) = %f\n",fSPDCouplRow); |
| | 188 | printf("Eccentricity in diffusion = %f\n",fSPDEccDiff); |
| | 189 | printf("Flag to add Lorentz Drift = %d\n",fSPDLorentzDrift); |
| | 190 | printf("Weight of Holes in Lor.Drift = %f\n",fSPDLorentzHoleWeight); |
| | 191 | printf("Flag to add noisy = %d\n",fSPDAddNoisyFlag); |
| | 192 | printf("Flag to remove dead = %d\n",fSPDRemoveDeadFlag); |
| | 193 | printf("\n"); |
| | 194 | printf("===== SDD parameters =====\n"); |
| | 195 | printf("Electronic chips = %d\n",fSDDElectronics); |
| | 196 | printf("Diffusion Coefficients = %f %f\n",fSDDDiffCoeff,fSDDDiffCoeff1); |
| | 197 | printf("Jitter Error = %f um\n",fSDDJitterError); |
| | 198 | printf("Dynamic Range = %f\n",fSDDDynamicRange); |
| | 199 | printf("Max. ADC = %f\n",fSDDMaxAdc); |
| | 200 | printf("Charge Loss = %f\n",fSDDChargeLoss); |
| | 201 | printf("Trigger Delay (ns) = %f\n",fSDDTrigDelay); |
| | 202 | printf("Raw Data Format = %d\n",fSDDRawFormat); |
| | 203 | printf("\n"); |
| | 204 | printf("===== SSD parameters =====\n"); |
| | 205 | printf("Flag to add Lorentz Drift = %d\n",fSSDLorentzDrift); |
| | 206 | printf("Coupling PR = %f\n",fSSDCouplingPR); |
| | 207 | printf("Coupling PL = %f\n",fSSDCouplingPL); |
| | 208 | printf("Coupling NR = %f\n",fSSDCouplingNR); |
| | 209 | printf("Coupling NL = %f\n",fSSDCouplingNL); |
| | 210 | printf("Zero Supp threshold = %d\n",fSSDZSThreshold); |
| | 211 | } |
| | 212 | //______________________________________________________________________ |
| | 213 | Double_t AliITSSimuParam::MobilityElectronSiEmp() const { |
| | 214 | // Computes the electron mobility in cm^2/volt-sec. Taken from SILVACO |
| | 215 | // International ATLAS II, 2D Device Simulation Framework, User Manual |
| | 216 | // Chapter 5 Equation 5-6. An empirical function for low-field mobiliity |
| | 217 | // in silicon at different tempeatures. |
| | 218 | // Inputs: |
| | 219 | // none. |
| | 220 | // Output: |
| | 221 | // none. |
| | 222 | // Return: |
| | 223 | // The Mobility of electrons in Si at a give temprature and impurity |
| | 224 | // concentration. [cm^2/Volt-sec] |
| | 225 | const Double_t km0 = 55.24; // cm^2/Volt-sec |
| | 226 | const Double_t km1 = 7.12E+08; // cm^2 (degree K)^2.3 / Volt-sec |
| | 227 | const Double_t kN0 = 1.072E17; // #/cm^3 |
| | 228 | const Double_t kT0 = 300.; // degree K. |
| | 229 | const Double_t keT0 = -2.3; // Power of Temp. |
| | 230 | const Double_t keT1 = -3.8; // Power of Temp. |
| | 231 | const Double_t keN = 0.73; // Power of Dopent Consentrations |
| | 232 | Double_t m; |
| | 233 | Double_t tT = fT,nN = fN; |
| | 234 | |
| | 235 | if(nN<=0.0){ // Simple case. |
| | 236 | if(tT==300.) return 1350.0; // From Table 5-1 at consentration 1.0E14. |
| | 237 | m = km1*TMath::Power(tT,keT0); |
| | 238 | return m; |
| | 239 | } // if nN<=0.0 |
| | 240 | m = km1*TMath::Power(tT,keT0) - km0; |
| | 241 | m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN); |
| | 242 | m += km0; |
| | 243 | return m; |
| | 244 | } |
| | 245 | //______________________________________________________________________ |
| | 246 | Double_t AliITSSimuParam::MobilityHoleSiEmp() const { |
| | 247 | // Computes the Hole mobility in cm^2/volt-sec. Taken from SILVACO |
| | 248 | // International ATLAS II, 2D Device Simulation Framework, User Manual |
| | 249 | // Chapter 5 Equation 5-7 An empirical function for low-field mobiliity |
| | 250 | // in silicon at different tempeatures. |
| | 251 | // Inputs: |
| | 252 | // none. |
| | 253 | // Output: |
| | 254 | // none. |
| | 255 | // Return: |
| | 256 | // The Mobility of Hole in Si at a give temprature and impurity |
| | 257 | // concentration. [cm^2/Volt-sec] |
| | 258 | const Double_t km0a = 49.74; // cm^2/Volt-sec |
| | 259 | const Double_t km0b = 49.70; // cm^2/Volt-sec |
| | 260 | const Double_t km1 = 1.35E+08; // cm^2 (degree K)^2.3 / Volt-sec |
| | 261 | const Double_t kN0 = 1.606E17; // #/cm^3 |
| | 262 | const Double_t kT0 = 300.; // degree K. |
| | 263 | const Double_t keT0 = -2.2; // Power of Temp. |
| | 264 | const Double_t keT1 = -3.7; // Power of Temp. |
| | 265 | const Double_t keN = 0.70; // Power of Dopent Consentrations |
| | 266 | Double_t m; |
| | 267 | Double_t tT = fT,nN = fN; |
| | 268 | |
| | 269 | if(nN<=0.0){ // Simple case. |
| | 270 | if(tT==300.) return 495.0; // From Table 5-1 at consentration 1.0E14. |
| | 271 | m = km1*TMath::Power(tT,keT0) + km0a-km0b; |
| | 272 | return m; |
| | 273 | } // if nN<=0.0 |
| | 274 | m = km1*TMath::Power(tT,keT0) - km0b; |
| | 275 | m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN); |
| | 276 | m += km0a; |
| | 277 | return m; |
| | 278 | } |
| | 279 | //______________________________________________________________________ |
| | 280 | Double_t AliITSSimuParam::DiffusionCoefficientElectron() const { |
| | 281 | // Computes the Diffusion coefficient for electrons in cm^2/sec. Taken |
| | 282 | // from SILVACO International ATLAS II, 2D Device Simulation Framework, |
| | 283 | // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion |
| | 284 | // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec. |
| | 285 | // Inputs: |
| | 286 | // none. |
| | 287 | // Output: |
| | 288 | // none. |
| | 289 | // Return: |
| | 290 | // The Diffusion Coefficient of electrons in Si at a give temprature |
| | 291 | // and impurity concentration. [cm^2/sec] |
| | 292 | // const Double_t kb = 1.3806503E-23; // Joules/degree K |
| | 293 | // const Double_t qe = 1.60217646E-19; // Coulumbs. |
| | 294 | const Double_t kbqe = 8.617342312E-5; // Volt/degree K |
| | 295 | Double_t m = MobilityElectronSiEmp(); |
| | 296 | Double_t tT = fT; |
| | 297 | |
| | 298 | return m*kbqe*tT; // [cm^2/sec] |
| | 299 | } |
| | 300 | //______________________________________________________________________ |
| | 301 | Double_t AliITSSimuParam::DiffusionCoefficientHole() const { |
| | 302 | // Computes the Diffusion coefficient for Holes in cm^2/sec. Taken |
| | 303 | // from SILVACO International ATLAS II, 2D Device Simulation Framework, |
| | 304 | // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion |
| | 305 | // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec. |
| | 306 | // Inputs: |
| | 307 | // none. |
| | 308 | // Output: |
| | 309 | // none. |
| | 310 | // Return: |
| | 311 | // The Defusion Coefficient of Hole in Si at a give temprature and |
| | 312 | // impurity concentration. [cm^2/sec] |
| | 313 | // and impurity concentration. [cm^2/sec] |
| | 314 | // const Double_t kb = 1.3806503E-23; // Joules/degree K |
| | 315 | // const Double_t qe = 1.60217646E-19; // Coulumbs. |
| | 316 | const Double_t kbqe = 8.617342312E-5; // Volt/degree K |
| | 317 | Double_t m = MobilityHoleSiEmp(); |
| | 318 | Double_t tT = fT; |
| | 319 | |
| | 320 | return m*kbqe*tT; // [cm^2/sec] |
| | 321 | } |
| | 322 | //______________________________________________________________________ |
| | 323 | Double_t AliITSSimuParam::LorentzAngleHole(Double_t B) const { |
| | 324 | // Computes the Lorentz angle for electrons in Si |
| | 325 | // Input: magnetic Field in KGauss |
| | 326 | // Output: Lorentz angle in radians (positive if Bz is positive) |
| | 327 | // Main Reference: NIM A 497 (2003) 389–396. |
| | 328 | // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al. |
| | 329 | // |
| | 330 | const Double_t krH=0.70; // Hall scattering factor for Hole |
| | 331 | const Double_t kT0 = 300.; // reference Temperature (degree K). |
| | 332 | const Double_t kmulow0 = 470.5; // cm^2/Volt-sec |
| | 333 | const Double_t keT0 = -2.5; // Power of Temp. |
| | 334 | const Double_t beta0 = 1.213; // beta coeff. at T0=300K |
| | 335 | const Double_t keT1 = 0.17; // Power of Temp. for beta |
| | 336 | const Double_t kvsat0 = 8.37E+06; // saturated velocity at T0=300K (cm/sec) |
| | 337 | const Double_t keT2 = 0.52; // Power of Temp. for vsat |
| | 338 | Double_t tT = fT; |
| | 339 | Double_t eE= 1./fDOverV; |
| | 340 | Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0); |
| | 341 | Double_t beta=beta0*TMath::Power(tT/kT0,keT1); |
| | 342 | Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2); |
| | 343 | Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta); |
| | 344 | Double_t angle=TMath::ATan(krH*mu*B*1.E-05); // Conversion Factor |
| | 345 | return angle; |
| | 346 | } |
| | 347 | //______________________________________________________________________ |
| | 348 | Double_t AliITSSimuParam::LorentzAngleElectron(Double_t B) const { |
| | 349 | // Computes the Lorentz angle for electrons in Si |
| | 350 | // Input: magnetic Field in KGauss |
| | 351 | // Output: Lorentz angle in radians (positive if Bz is positive) |
| | 352 | // Main Reference: NIM A 497 (2003) 389–396. |
| | 353 | // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al. |
| | 354 | // |
| | 355 | const Double_t krH=1.15; // Hall scattering factor for Electron |
| | 356 | const Double_t kT0 = 300.; // reference Temperature (degree K). |
| | 357 | const Double_t kmulow0 = 1417.0; // cm^2/Volt-sec |
| | 358 | const Double_t keT0 = -2.2; // Power of Temp. |
| | 359 | const Double_t beta0 = 1.109; // beta coeff. at T0=300K |
| | 360 | const Double_t keT1 = 0.66; // Power of Temp. for beta |
| | 361 | const Double_t kvsat0 = 1.07E+07; // saturated velocity at T0=300K (cm/sec) |
| | 362 | const Double_t keT2 = 0.87; // Power of Temp. for vsat |
| | 363 | Double_t tT = fT; |
| | 364 | Double_t eE= 1./fDOverV; |
| | 365 | Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0); |
| | 366 | Double_t beta=beta0*TMath::Power(tT/kT0,keT1); |
| | 367 | Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2); |
| | 368 | Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta); |
| | 369 | Double_t angle=TMath::ATan(krH*mu*B*1.E-05); |
| | 370 | return angle; |
| | 371 | } |
| | 372 | //______________________________________________________________________ |
| | 373 | Double_t AliITSSimuParam::SpeedElectron() const { |
| | 374 | // Computes the average speed for electrons in Si under the low-field |
| | 375 | // approximation. [cm/sec]. |
| | 376 | // Inputs: |
| | 377 | // none. |
| | 378 | // Output: |
| | 379 | // none. |
| | 380 | // Return: |
| | 381 | // The speed the holes are traveling at due to the low field applied. |
| | 382 | // [cm/sec] |
| | 383 | Double_t m = MobilityElectronSiEmp(); |
| | 384 | |
| | 385 | return m/fDOverV; // [cm/sec] |
| | 386 | } |
| | 387 | //______________________________________________________________________ |
| | 388 | Double_t AliITSSimuParam::SpeedHole() const { |
| | 389 | // Computes the average speed for Holes in Si under the low-field |
| | 390 | // approximation.[cm/sec]. |
| | 391 | // Inputs: |
| | 392 | // none. |
| | 393 | // Output: |
| | 394 | // none. |
| | 395 | // Return: |
| | 396 | // The speed the holes are traveling at due to the low field applied. |
| | 397 | // [cm/sec] |
| | 398 | Double_t m = MobilityHoleSiEmp(); |
| | 399 | |
| | 400 | return m/fDOverV; // [cm/sec] |
| | 401 | } |
| | 402 | //______________________________________________________________________ |
| | 403 | Double_t AliITSSimuParam::SigmaDiffusion3D(Double_t l) const { |
| | 404 | // Returns the Gaussian sigma^2 == <x^2+y^2+z^2> [cm^2] due to the |
| | 405 | // defusion of electrons or holes through a distance l [cm] caused |
| | 406 | // by an applied voltage v [volt] through a distance d [cm] in any |
| | 407 | // material at a temperature T [degree K]. The sigma diffusion when |
| | 408 | // expressed in terms of the distance over which the diffusion |
| | 409 | // occures, l=time/speed, is independent of the mobility and therefore |
| | 410 | // the properties of the material. The charge distributions is given by |
| | 411 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 6Dt where D=mkT/e |
| | 412 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric |
| | 413 | // charge. and vel=m*v/d. consiquently sigma^2=6kTdl/ev. |
| | 414 | // Inputs: |
| | 415 | // Double_t l Distance the charge has to travel. |
| | 416 | // Output: |
| | 417 | // none. |
| | 418 | // Return: |
| | 419 | // The Sigma due to the diffution of electrons. [cm] |
| | 420 | const Double_t kcon = 5.17040258E-04; // == 6k/e [J/col or volts] |
| | 421 | |
| | 422 | return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm] |
| | 423 | } |
| | 424 | //______________________________________________________________________ |
| | 425 | Double_t AliITSSimuParam::SigmaDiffusion2D(Double_t l) const { |
| | 426 | // Returns the Gaussian sigma^2 == <x^2+z^2> [cm^2] due to the defusion |
| | 427 | // of electrons or holes through a distance l [cm] caused by an applied |
| | 428 | // voltage v [volt] through a distance d [cm] in any material at a |
| | 429 | // temperature T [degree K]. The sigma diffusion when expressed in terms |
| | 430 | // of the distance over which the diffusion occures, l=time/speed, is |
| | 431 | // independent of the mobility and therefore the properties of the |
| | 432 | // material. The charge distributions is given by |
| | 433 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <x^2+z^2> = 4Dt where D=mkT/e |
| | 434 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric |
| | 435 | // charge. and vel=m*v/d. consiquently sigma^2=4kTdl/ev. |
| | 436 | // Inputs: |
| | 437 | // Double_t l Distance the charge has to travel. |
| | 438 | // Output: |
| | 439 | // none. |
| | 440 | // Return: |
| | 441 | // The Sigma due to the diffution of electrons. [cm] |
| | 442 | const Double_t kcon = 3.446935053E-04; // == 4k/e [J/col or volts] |
| | 443 | |
| | 444 | return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm] |
| | 445 | } |
| | 446 | //______________________________________________________________________ |
| | 447 | Double_t AliITSSimuParam::SigmaDiffusion1D(Double_t l) const { |
| | 448 | // Returns the Gaussian sigma^2 == <x^2> [cm^2] due to the defusion |
| | 449 | // of electrons or holes through a distance l [cm] caused by an applied |
| | 450 | // voltage v [volt] through a distance d [cm] in any material at a |
| | 451 | // temperature T [degree K]. The sigma diffusion when expressed in terms |
| | 452 | // of the distance over which the diffusion occures, l=time/speed, is |
| | 453 | // independent of the mobility and therefore the properties of the |
| | 454 | // material. The charge distributions is given by |
| | 455 | // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 2Dt where D=mkT/e |
| | 456 | // (m==mobility, k==Boltzman's constant, T==temparature, e==electric |
| | 457 | // charge. and vel=m*v/d. consiquently sigma^2=2kTdl/ev. |
| | 458 | // Inputs: |
| | 459 | // Double_t l Distance the charge has to travel. |
| | 460 | // Output: |
| | 461 | // none. |
| | 462 | // Return: |
| | 463 | // The Sigma due to the diffution of electrons. [cm] |
| | 464 | const Double_t kcon = 1.723467527E-04; // == 2k/e [J/col or volts] |
| | 465 | |
| | 466 | return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm] |
| | 467 | } |
| | 468 | //---------------------------------------------------------------------- |
| | 469 | Double_t AliITSSimuParam::DepletedRegionThicknessA(Double_t dopCons, |
| | 470 | Double_t voltage, |
| | 471 | Double_t elecCharge, |
| | 472 | Double_t voltBuiltIn)const{ |
| | 473 | // Computes the thickness of the depleted region in Si due to the |
| | 474 | // application of an external bias voltage. From the Particle Data |
| | 475 | // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004) |
| | 476 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 |
| | 477 | // July 15 2004, ISSN 0370-2693 page 263. First equation. |
| | 478 | // Inputs: |
| | 479 | // Double_t dopCons "N" doping concentration |
| | 480 | // Double_t voltage "V" external bias voltage |
| | 481 | // Double_t elecCharge "e" electronic charge |
| | 482 | // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for |
| | 483 | // resistivities typically used in detectors) |
| | 484 | // Output: |
| | 485 | // none. |
| | 486 | // Return: |
| | 487 | // The thickness of the depleted region |
| | 488 | |
| | 489 | return TMath::Sqrt(2.0*(voltage+voltBuiltIn)/(dopCons*elecCharge)); |
| | 490 | } |
| | 491 | //---------------------------------------------------------------------- |
| | 492 | Double_t AliITSSimuParam::DepletedRegionThicknessB(Double_t resist, |
| | 493 | Double_t voltage, |
| | 494 | Double_t mobility, |
| | 495 | Double_t voltBuiltIn, |
| | 496 | Double_t dielConst)const{ |
| | 497 | // Computes the thickness of the depleted region in Si due to the |
| | 498 | // application of an external bias voltage. From the Particle Data |
| | 499 | // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004) |
| | 500 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 |
| | 501 | // July 15 2004, ISSN 0370-2693 page 263. Second Equation. |
| | 502 | // Inputs: |
| | 503 | // Double_t resist "rho" resistivity (typically 1-10 kOhm cm) |
| | 504 | // Double_t voltage "V" external bias voltage |
| | 505 | // Double_t mobility "mu" charge carrier mobility |
| | 506 | // (electons 1350, holes 450 cm^2/V/s) |
| | 507 | // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for |
| | 508 | // resistivities typically used in detectors) |
| | 509 | // Double_t dielConst=1.E-12 "epsilon" dielectric constant = 11.9 * |
| | 510 | // (permittivity of free space) or ~ 1 pF/cm |
| | 511 | // Output: |
| | 512 | // none. |
| | 513 | // Return: |
| | 514 | // The thickness of the depleted region |
| | 515 | |
| | 516 | return TMath::Sqrt(2.8*resist*mobility*dielConst*(voltage+voltBuiltIn)); |
| | 517 | } |
| | 518 | //---------------------------------------------------------------------- |
| | 519 | Double_t AliITSSimuParam::ReverseBiasCurrent(Double_t temp, |
| | 520 | Double_t revBiasCurT1, |
| | 521 | Double_t tempT1, |
| | 522 | Double_t energy)const{ |
| | 523 | // Computes the temperature dependance of the reverse bias current |
| | 524 | // of Si detectors. From the Particle Data |
| | 525 | // Book, 28.8 Silicon semiconductor detectors equation 28.21 (2004) |
| | 526 | // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4 |
| | 527 | // July 15 2004, ISSN 0370-2693 page 263. |
| | 528 | // Inputs: |
| | 529 | // Double_t temp The temperature at which the current is wanted |
| | 530 | // Double_t revBiasCurT1 The reference bias current at temp T1 |
| | 531 | // Double_t tempT1 The temperature correstponding to revBiasCurT1 |
| | 532 | // Double_t energy=1.2 Some energy [eV] |
| | 533 | // Output: |
| | 534 | // none. |
| | 535 | // Return: |
| | 536 | // The reverse bias current at the tempeature temp. |
| | 537 | const Double_t kBoltz = 8.617343E-5; //[eV/K] |
| | 538 | |
| | 539 | return revBiasCurT1*(temp*temp/(tempT1*tempT1))* |
| | 540 | TMath::Exp(-0.5*energy*(tempT1-temp)/(kBoltz*tempT1*temp)); |
| | 541 | } |
| | 542 | //______________________________________________________________________ |
| | 543 | void AliITSSimuParam::SPDThresholds(const Int_t mod, Double_t& thresh, Double_t& sigma) const { |
| | 544 | if(mod<0 || mod>239) { |
| | 545 | thresh=0; |
| | 546 | sigma=0; |
| | 547 | return; |
| | 548 | } |
| | 549 | thresh=fSPDThresh[mod]; |
| | 550 | sigma=fSPDSigma[mod]; |
| | 551 | return; |
| | 552 | } |
| | 553 | //_______________________________________________________________________ |
| | 554 | void AliITSSimuParam::SPDNoise(const Int_t mod,Double_t &noise, Double_t &baseline) const { |
| | 555 | if(mod<0 || mod>239) { |
| | 556 | noise=0; |
| | 557 | baseline=0; |
| | 558 | return; |
| | 559 | } |
| | 560 | noise=fSPDNoise[mod]; |
| | 561 | baseline=fSPDBaseline[mod]; |
| | 562 | return; |
| | 563 | } |
| | 564 | |
git://git.uio.no / u / mrichter / AliRoot.git / blame_incremental