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5 * Contributors are mentioned in the code where appropriate. *
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14 **************************************************************************/
18 ///////////////////////////////////////////////////////////////////
20 // Implementation of the class to store the parameters used in //
21 // the simulation of SPD, SDD and SSD detectors //
22 // Origin: F.Prino, Torino, prino@to.infn.it //
24 ///////////////////////////////////////////////////////////////////
26 #include "AliITSSimuParam.h"
29 const Float_t AliITSSimuParam::fgkSPDBiasVoltageDefault = 18.182;
30 const Double_t AliITSSimuParam::fgkSPDThreshDefault = 3000.;
31 const Double_t AliITSSimuParam::fgkSPDSigmaDefault = 250.;
32 const TString AliITSSimuParam::fgkSPDCouplingOptDefault = "old";
33 const Double_t AliITSSimuParam::fgkSPDCouplColDefault = 0.;
34 const Double_t AliITSSimuParam::fgkSPDCouplRowDefault = 0.055;
35 const Float_t AliITSSimuParam::fgkSPDEccDiffDefault = 0.85;
36 const Float_t AliITSSimuParam::fgkSDDDiffCoeffDefault = 3.23;
37 const Float_t AliITSSimuParam::fgkSDDDiffCoeff1Default = 30.;
38 const Float_t AliITSSimuParam::fgkSDDJitterErrorDefault = 20.; // 20 um from beam test 2001
39 const Float_t AliITSSimuParam::fgkSDDDynamicRangeDefault = 1400./2.5; // mV/MOhm = nA
40 const Int_t AliITSSimuParam::fgkSDDMaxAdcDefault = 1024;
41 const Float_t AliITSSimuParam::fgkSDDChargeLossDefault = 0.;
42 const Double_t AliITSSimuParam::fgkSSDCouplingPRDefault = 0.01;
43 const Double_t AliITSSimuParam::fgkSSDCouplingPLDefault = 0.01;
44 const Double_t AliITSSimuParam::fgkSSDCouplingNRDefault = 0.01;
45 const Double_t AliITSSimuParam::fgkSSDCouplingNLDefault = 0.01;
46 const Int_t AliITSSimuParam::fgkSSDZSThresholdDefault = 3;
48 const Float_t AliITSSimuParam::fgkNsigmasDefault = 3.;
49 const Int_t AliITSSimuParam::fgkNcompsDefault = 121;
51 ClassImp(AliITSSimuParam)
53 //______________________________________________________________________
54 AliITSSimuParam::AliITSSimuParam():
58 //fSPDBiasVoltage(fgkSPDBiasVoltageDefault),
59 //fSPDThresh(fgkSPDThreshDefault),
60 //fSPDSigma(fgkSPDSigmaDefault),
62 fSPDCouplCol(fgkSPDCouplColDefault),
63 fSPDCouplRow(fgkSPDCouplRowDefault),
65 fSPDAddNoisyFlag(kFALSE),
66 fSPDRemoveDeadFlag(kFALSE),
70 fSDDJitterError(fgkSDDJitterErrorDefault),
71 fSDDDynamicRange(fgkSDDDynamicRangeDefault),
73 fSDDChargeLoss(fgkSDDChargeLossDefault),
79 fSSDZSThreshold(fgkSSDZSThresholdDefault),
80 fNsigmas(fgkNsigmasDefault),
81 fNcomps(fgkNcompsDefault),
86 // default constructor
87 SetSPDBiasVoltageAll(fgkSPDBiasVoltageDefault);
88 SetSPDThresholdsAll(fgkSPDThreshDefault,fgkSPDSigmaDefault);
91 SetDistanceOverVoltage();
92 SetSPDCouplingOption(fgkSPDCouplingOptDefault);
93 SetSPDSigmaDiffusionAsymmetry(fgkSPDEccDiffDefault);
95 SetSDDDiffCoeff(fgkSDDDiffCoeffDefault,fgkSDDDiffCoeff1Default);
96 SetSDDMaxAdc((Double_t)fgkSDDMaxAdcDefault);
97 SetSSDCouplings(fgkSSDCouplingPRDefault,fgkSSDCouplingPLDefault,fgkSSDCouplingNRDefault,fgkSSDCouplingNLDefault);
99 //______________________________________________________________________
100 AliITSSimuParam::AliITSSimuParam(const AliITSSimuParam &simpar):
102 fGeVcharge(simpar.fGeVcharge),
103 fDOverV(simpar.fDOverV),
104 //fSPDBiasVoltage(simpar.fSPDBiasVoltage),
105 //fSPDThresh(simpar.fSPDThresh),
106 //fSPDSigma(simpar.fSPDSigma),
107 fSPDCouplOpt(simpar.fSPDCouplOpt),
108 fSPDCouplCol(simpar.fSPDCouplCol),
109 fSPDCouplRow(simpar.fSPDCouplRow),
110 fSPDEccDiff(simpar.fSPDEccDiff),
111 fSPDAddNoisyFlag(simpar.fSPDAddNoisyFlag),
112 fSPDRemoveDeadFlag(simpar.fSPDRemoveDeadFlag),
113 fSDDElectronics(simpar.fSDDElectronics),
114 fSDDDiffCoeff(simpar.fSDDDiffCoeff),
115 fSDDDiffCoeff1(simpar.fSDDDiffCoeff1),
116 fSDDJitterError(simpar.fSDDJitterError),
117 fSDDDynamicRange(simpar.fSDDDynamicRange),
118 fSDDMaxAdc(simpar.fSDDMaxAdc),
119 fSDDChargeLoss(simpar.fSDDChargeLoss),
120 fSDDRawFormat(simpar.fSDDRawFormat),
121 fSSDCouplingPR(simpar.fSSDCouplingPR),
122 fSSDCouplingPL(simpar.fSSDCouplingPL),
123 fSSDCouplingNR(simpar.fSSDCouplingNR),
124 fSSDCouplingNL(simpar.fSSDCouplingNL),
125 fSSDZSThreshold(simpar.fSSDZSThreshold),
126 fNsigmas(simpar.fNsigmas),
127 fNcomps(simpar.fNcomps),
132 for (Int_t i=0;i<240;i++) {
133 fSPDBiasVoltage[i]=simpar.fSPDBiasVoltage[i];
134 fSPDThresh[i]=simpar.fSPDThresh[i];
135 fSPDSigma[i]=simpar.fSPDSigma[i];
136 fSPDNoise[i]=simpar.fSPDNoise[i];
137 fSPDBaseline[i]=simpar.fSPDBaseline[i];
141 //______________________________________________________________________
142 AliITSSimuParam& AliITSSimuParam::operator=(const AliITSSimuParam& source){
143 // Assignment operator.
144 this->~AliITSSimuParam();
145 new(this) AliITSSimuParam(source);
151 //______________________________________________________________________
152 AliITSSimuParam::~AliITSSimuParam() {
154 if(fGaus) delete fGaus;
156 //________________________________________________________________________
157 void AliITSSimuParam::SetNLookUp(Int_t p1){
158 // Set number of sigmas over which cluster disintegration is performed
160 if (fGaus) delete fGaus;
161 fGaus = new TArrayF(fNcomps+1);
162 for(Int_t i=0; i<=fNcomps; i++) {
163 Float_t x = -fNsigmas + (2.*i*fNsigmas)/(fNcomps-1);
164 (*fGaus)[i] = exp(-((x*x)/2));
167 //________________________________________________________________________
168 void AliITSSimuParam::PrintParameters() const{
169 printf("GeVToCharge = %G\n",fGeVcharge);
170 printf("DistanveOverVoltage = %f \n",fDOverV);
172 printf("===== SPD parameters =====\n");
173 printf("Bias Voltage = %f \n",fSPDBiasVoltage[0]);
174 printf("Threshold and sigma = %f %f\n",fSPDThresh[0],fSPDSigma[0]);
175 printf("Coupling Option = %s\n",fSPDCouplOpt.Data());
176 printf("Coupling value (column) = %f\n",fSPDCouplCol);
177 printf("Coupling value (row) = %f\n",fSPDCouplRow);
178 printf("Eccentricity in diffusion = %f\n",fSPDEccDiff);
179 printf("Flag to add noisy = %d\n",fSPDAddNoisyFlag);
180 printf("Flag to remove dead = %d\n",fSPDRemoveDeadFlag);
182 printf("===== SDD parameters =====\n");
183 printf("Electronic chips = %d\n",fSDDElectronics);
184 printf("Diffusion Coefficients = %f %f\n",fSDDDiffCoeff,fSDDDiffCoeff1);
185 printf("Jitter Error = %f um\n",fSDDJitterError);
186 printf("Dynamic Range = %f\n",fSDDDynamicRange);
187 printf("Max. ADC = %f\n",fSDDMaxAdc);
188 printf("Charge Loss = %f\n",fSDDChargeLoss);
189 printf("Raw Data Format = %d\n",fSDDRawFormat);
191 printf("===== SSD parameters =====\n");
192 printf("Coupling PR = %f\n",fSSDCouplingPR);
193 printf("Coupling PL = %f\n",fSSDCouplingPL);
194 printf("Coupling NR = %f\n",fSSDCouplingNR);
195 printf("Coupling NL = %f\n",fSSDCouplingNL);
196 printf("Zero Supp threshold = %d\n",fSSDZSThreshold);
198 //______________________________________________________________________
199 Double_t AliITSSimuParam::MobilityElectronSiEmp() const {
200 // Computes the electron mobility in cm^2/volt-sec. Taken from SILVACO
201 // International ATLAS II, 2D Device Simulation Framework, User Manual
202 // Chapter 5 Equation 5-6. An empirical function for low-field mobiliity
203 // in silicon at different tempeatures.
209 // The Mobility of electrons in Si at a give temprature and impurity
210 // concentration. [cm^2/Volt-sec]
211 const Double_t km0 = 55.24; // cm^2/Volt-sec
212 const Double_t km1 = 7.12E+08; // cm^2 (degree K)^2.3 / Volt-sec
213 const Double_t kN0 = 1.072E17; // #/cm^3
214 const Double_t kT0 = 300.; // degree K.
215 const Double_t keT0 = -2.3; // Power of Temp.
216 const Double_t keT1 = -3.8; // Power of Temp.
217 const Double_t keN = 0.73; // Power of Dopent Consentrations
219 Double_t tT = fT,nN = fN;
221 if(nN<=0.0){ // Simple case.
222 if(tT==300.) return 1350.0; // From Table 5-1 at consentration 1.0E14.
223 m = km1*TMath::Power(tT,keT0);
226 m = km1*TMath::Power(tT,keT0) - km0;
227 m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN);
231 //______________________________________________________________________
232 Double_t AliITSSimuParam::MobilityHoleSiEmp() const {
233 // Computes the Hole mobility in cm^2/volt-sec. Taken from SILVACO
234 // International ATLAS II, 2D Device Simulation Framework, User Manual
235 // Chapter 5 Equation 5-7 An empirical function for low-field mobiliity
236 // in silicon at different tempeatures.
242 // The Mobility of Hole in Si at a give temprature and impurity
243 // concentration. [cm^2/Volt-sec]
244 const Double_t km0a = 49.74; // cm^2/Volt-sec
245 const Double_t km0b = 49.70; // cm^2/Volt-sec
246 const Double_t km1 = 1.35E+08; // cm^2 (degree K)^2.3 / Volt-sec
247 const Double_t kN0 = 1.606E17; // #/cm^3
248 const Double_t kT0 = 300.; // degree K.
249 const Double_t keT0 = -2.2; // Power of Temp.
250 const Double_t keT1 = -3.7; // Power of Temp.
251 const Double_t keN = 0.70; // Power of Dopent Consentrations
253 Double_t tT = fT,nN = fN;
255 if(nN<=0.0){ // Simple case.
256 if(tT==300.) return 495.0; // From Table 5-1 at consentration 1.0E14.
257 m = km1*TMath::Power(tT,keT0) + km0a-km0b;
260 m = km1*TMath::Power(tT,keT0) - km0b;
261 m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN);
265 //______________________________________________________________________
266 Double_t AliITSSimuParam::DiffusionCoefficientElectron() const {
267 // Computes the Diffusion coefficient for electrons in cm^2/sec. Taken
268 // from SILVACO International ATLAS II, 2D Device Simulation Framework,
269 // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
270 // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
276 // The Diffusion Coefficient of electrons in Si at a give temprature
277 // and impurity concentration. [cm^2/sec]
278 // const Double_t kb = 1.3806503E-23; // Joules/degree K
279 // const Double_t qe = 1.60217646E-19; // Coulumbs.
280 const Double_t kbqe = 8.617342312E-5; // Volt/degree K
281 Double_t m = MobilityElectronSiEmp();
284 return m*kbqe*tT; // [cm^2/sec]
286 //______________________________________________________________________
287 Double_t AliITSSimuParam::DiffusionCoefficientHole() const {
288 // Computes the Diffusion coefficient for Holes in cm^2/sec. Taken
289 // from SILVACO International ATLAS II, 2D Device Simulation Framework,
290 // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
291 // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
297 // The Defusion Coefficient of Hole in Si at a give temprature and
298 // impurity concentration. [cm^2/sec]
299 // and impurity concentration. [cm^2/sec]
300 // const Double_t kb = 1.3806503E-23; // Joules/degree K
301 // const Double_t qe = 1.60217646E-19; // Coulumbs.
302 const Double_t kbqe = 8.617342312E-5; // Volt/degree K
303 Double_t m = MobilityHoleSiEmp();
306 return m*kbqe*tT; // [cm^2/sec]
308 //______________________________________________________________________
309 Double_t AliITSSimuParam::LorentzAngleHole(Double_t B) const {
310 // Computes the Lorentz angle for electrons in Si
311 // Input: magnetic Field in KGauss
312 // Output: Lorentz angle in radians (positive if Bz is positive)
313 // Main Reference: NIM A 497 (2003) 389–396.
314 // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al.
316 const Double_t krH=0.70; // Hall scattering factor for Hole
317 const Double_t kT0 = 300.; // reference Temperature (degree K).
318 const Double_t kmulow0 = 470.5; // cm^2/Volt-sec
319 const Double_t keT0 = -2.5; // Power of Temp.
320 const Double_t beta0 = 1.213; // beta coeff. at T0=300K
321 const Double_t keT1 = 0.17; // Power of Temp. for beta
322 const Double_t kvsat0 = 8.37E+06; // saturated velocity at T0=300K (cm/sec)
323 const Double_t keT2 = 0.52; // Power of Temp. for vsat
325 Double_t eE= 1./fDOverV;
326 Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0);
327 Double_t beta=beta0*TMath::Power(tT/kT0,keT1);
328 Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2);
329 Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta);
330 Double_t angle=TMath::ATan(krH*mu*B*1.E-05); // Conversion Factor
333 //______________________________________________________________________
334 Double_t AliITSSimuParam::LorentzAngleElectron(Double_t B) const {
335 // Computes the Lorentz angle for electrons in Si
336 // Input: magnetic Field in KGauss
337 // Output: Lorentz angle in radians (positive if Bz is positive)
338 // Main Reference: NIM A 497 (2003) 389–396.
339 // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al.
341 const Double_t krH=1.15; // Hall scattering factor for Electron
342 const Double_t kT0 = 300.; // reference Temperature (degree K).
343 const Double_t kmulow0 = 1417.0; // cm^2/Volt-sec
344 const Double_t keT0 = -2.2; // Power of Temp.
345 const Double_t beta0 = 1.109; // beta coeff. at T0=300K
346 const Double_t keT1 = 0.66; // Power of Temp. for beta
347 const Double_t kvsat0 = 1.07E+07; // saturated velocity at T0=300K (cm/sec)
348 const Double_t keT2 = 0.87; // Power of Temp. for vsat
350 Double_t eE= 1./fDOverV;
351 Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0);
352 Double_t beta=beta0*TMath::Power(tT/kT0,keT1);
353 Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2);
354 Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta);
355 Double_t angle=TMath::ATan(krH*mu*B*1.E-05);
358 //______________________________________________________________________
359 Double_t AliITSSimuParam::SpeedElectron() const {
360 // Computes the average speed for electrons in Si under the low-field
361 // approximation. [cm/sec].
367 // The speed the holes are traveling at due to the low field applied.
369 Double_t m = MobilityElectronSiEmp();
371 return m/fDOverV; // [cm/sec]
373 //______________________________________________________________________
374 Double_t AliITSSimuParam::SpeedHole() const {
375 // Computes the average speed for Holes in Si under the low-field
376 // approximation.[cm/sec].
382 // The speed the holes are traveling at due to the low field applied.
384 Double_t m = MobilityHoleSiEmp();
386 return m/fDOverV; // [cm/sec]
388 //______________________________________________________________________
389 Double_t AliITSSimuParam::SigmaDiffusion3D(Double_t l) const {
390 // Returns the Gaussian sigma^2 == <x^2+y^2+z^2> [cm^2] due to the
391 // defusion of electrons or holes through a distance l [cm] caused
392 // by an applied voltage v [volt] through a distance d [cm] in any
393 // material at a temperature T [degree K]. The sigma diffusion when
394 // expressed in terms of the distance over which the diffusion
395 // occures, l=time/speed, is independent of the mobility and therefore
396 // the properties of the material. The charge distributions is given by
397 // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 6Dt where D=mkT/e
398 // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
399 // charge. and vel=m*v/d. consiquently sigma^2=6kTdl/ev.
401 // Double_t l Distance the charge has to travel.
405 // The Sigma due to the diffution of electrons. [cm]
406 const Double_t kcon = 5.17040258E-04; // == 6k/e [J/col or volts]
408 return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm]
410 //______________________________________________________________________
411 Double_t AliITSSimuParam::SigmaDiffusion2D(Double_t l) const {
412 // Returns the Gaussian sigma^2 == <x^2+z^2> [cm^2] due to the defusion
413 // of electrons or holes through a distance l [cm] caused by an applied
414 // voltage v [volt] through a distance d [cm] in any material at a
415 // temperature T [degree K]. The sigma diffusion when expressed in terms
416 // of the distance over which the diffusion occures, l=time/speed, is
417 // independent of the mobility and therefore the properties of the
418 // material. The charge distributions is given by
419 // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <x^2+z^2> = 4Dt where D=mkT/e
420 // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
421 // charge. and vel=m*v/d. consiquently sigma^2=4kTdl/ev.
423 // Double_t l Distance the charge has to travel.
427 // The Sigma due to the diffution of electrons. [cm]
428 const Double_t kcon = 3.446935053E-04; // == 4k/e [J/col or volts]
430 return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm]
432 //______________________________________________________________________
433 Double_t AliITSSimuParam::SigmaDiffusion1D(Double_t l) const {
434 // Returns the Gaussian sigma^2 == <x^2> [cm^2] due to the defusion
435 // of electrons or holes through a distance l [cm] caused by an applied
436 // voltage v [volt] through a distance d [cm] in any material at a
437 // temperature T [degree K]. The sigma diffusion when expressed in terms
438 // of the distance over which the diffusion occures, l=time/speed, is
439 // independent of the mobility and therefore the properties of the
440 // material. The charge distributions is given by
441 // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 2Dt where D=mkT/e
442 // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
443 // charge. and vel=m*v/d. consiquently sigma^2=2kTdl/ev.
445 // Double_t l Distance the charge has to travel.
449 // The Sigma due to the diffution of electrons. [cm]
450 const Double_t kcon = 1.723467527E-04; // == 2k/e [J/col or volts]
452 return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm]
454 //----------------------------------------------------------------------
455 Double_t AliITSSimuParam::DepletedRegionThicknessA(Double_t dopCons,
458 Double_t voltBuiltIn)const{
459 // Computes the thickness of the depleted region in Si due to the
460 // application of an external bias voltage. From the Particle Data
461 // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004)
462 // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
463 // July 15 2004, ISSN 0370-2693 page 263. First equation.
465 // Double_t dopCons "N" doping concentration
466 // Double_t voltage "V" external bias voltage
467 // Double_t elecCharge "e" electronic charge
468 // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for
469 // resistivities typically used in detectors)
473 // The thickness of the depleted region
475 return TMath::Sqrt(2.0*(voltage+voltBuiltIn)/(dopCons*elecCharge));
477 //----------------------------------------------------------------------
478 Double_t AliITSSimuParam::DepletedRegionThicknessB(Double_t resist,
481 Double_t voltBuiltIn,
482 Double_t dielConst)const{
483 // Computes the thickness of the depleted region in Si due to the
484 // application of an external bias voltage. From the Particle Data
485 // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004)
486 // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
487 // July 15 2004, ISSN 0370-2693 page 263. Second Equation.
489 // Double_t resist "rho" resistivity (typically 1-10 kOhm cm)
490 // Double_t voltage "V" external bias voltage
491 // Double_t mobility "mu" charge carrier mobility
492 // (electons 1350, holes 450 cm^2/V/s)
493 // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for
494 // resistivities typically used in detectors)
495 // Double_t dielConst=1.E-12 "epsilon" dielectric constant = 11.9 *
496 // (permittivity of free space) or ~ 1 pF/cm
500 // The thickness of the depleted region
502 return TMath::Sqrt(2.8*resist*mobility*dielConst*(voltage+voltBuiltIn));
504 //----------------------------------------------------------------------
505 Double_t AliITSSimuParam::ReverseBiasCurrent(Double_t temp,
506 Double_t revBiasCurT1,
508 Double_t energy)const{
509 // Computes the temperature dependance of the reverse bias current
510 // of Si detectors. From the Particle Data
511 // Book, 28.8 Silicon semiconductor detectors equation 28.21 (2004)
512 // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
513 // July 15 2004, ISSN 0370-2693 page 263.
515 // Double_t temp The temperature at which the current is wanted
516 // Double_t revBiasCurT1 The reference bias current at temp T1
517 // Double_t tempT1 The temperature correstponding to revBiasCurT1
518 // Double_t energy=1.2 Some energy [eV]
522 // The reverse bias current at the tempeature temp.
523 const Double_t kBoltz = 8.617343E-5; //[eV/K]
525 return revBiasCurT1*(temp*temp/(tempT1*tempT1))*
526 TMath::Exp(-0.5*energy*(tempT1-temp)/(kBoltz*tempT1*temp));
528 //______________________________________________________________________
529 void AliITSSimuParam::SPDThresholds(const Int_t mod, Double_t& thresh, Double_t& sigma) const {
530 if(mod<0 || mod>239) {
535 thresh=fSPDThresh[mod];
536 sigma=fSPDSigma[mod];
539 //_______________________________________________________________________
540 void AliITSSimuParam::SPDNoise(const Int_t mod,Double_t &noise, Double_t &baseline) const {
541 if(mod<0 || mod>239) {
546 noise=fSPDNoise[mod];
547 baseline=fSPDBaseline[mod];