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5 * Contributors are mentioned in the code where appropriate. *
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14 **************************************************************************/
18 ///////////////////////////////////////////////////////////////////
20 // Implementation of the class to store the parameters used in //
21 // the simulation of SPD, SDD and SSD detectors //
22 // Origin: F.Prino, Torino, prino@to.infn.it //
24 ///////////////////////////////////////////////////////////////////
26 #include "AliITSSimuParam.h"
29 const Float_t AliITSSimuParam::fgkSPDBiasVoltageDefault = 18.182;
30 const Double_t AliITSSimuParam::fgkSPDThreshDefault = 3000.;
31 const Double_t AliITSSimuParam::fgkSPDSigmaDefault = 250.;
32 const TString AliITSSimuParam::fgkSPDCouplingOptDefault = "old";
33 const Double_t AliITSSimuParam::fgkSPDCouplColDefault = 0.;
34 const Double_t AliITSSimuParam::fgkSPDCouplRowDefault = 0.055;
35 const Float_t AliITSSimuParam::fgkSPDEccDiffDefault = 0.85;
36 const Float_t AliITSSimuParam::fgkSDDDiffCoeffDefault = 3.23;
37 const Float_t AliITSSimuParam::fgkSDDDiffCoeff1Default = 30.;
38 const Float_t AliITSSimuParam::fgkSDDJitterErrorDefault = 20.; // 20 um from beam test 2001
39 const Float_t AliITSSimuParam::fgkSDDDynamicRangeDefault = 1400./2.5; // mV/MOhm = nA
40 const Int_t AliITSSimuParam::fgkSDDMaxAdcDefault = 1024;
41 const Float_t AliITSSimuParam::fgkSDDChargeLossDefault = 0.;
42 const Double_t AliITSSimuParam::fgkSSDCouplingPRDefault = 0.01;
43 const Double_t AliITSSimuParam::fgkSSDCouplingPLDefault = 0.01;
44 const Double_t AliITSSimuParam::fgkSSDCouplingNRDefault = 0.01;
45 const Double_t AliITSSimuParam::fgkSSDCouplingNLDefault = 0.01;
46 const Int_t AliITSSimuParam::fgkSSDZSThresholdDefault = 3;
48 const Float_t AliITSSimuParam::fgkNsigmasDefault = 3.;
49 const Int_t AliITSSimuParam::fgkNcompsDefault = 121;
51 ClassImp(AliITSSimuParam)
53 //______________________________________________________________________
54 AliITSSimuParam::AliITSSimuParam():
58 //fSPDBiasVoltage(fgkSPDBiasVoltageDefault),
59 //fSPDThresh(fgkSPDThreshDefault),
60 //fSPDSigma(fgkSPDSigmaDefault),
62 fSPDCouplCol(fgkSPDCouplColDefault),
63 fSPDCouplRow(fgkSPDCouplRowDefault),
65 fSPDAddNoisyFlag(kFALSE),
66 fSPDRemoveDeadFlag(kFALSE),
70 fSDDJitterError(fgkSDDJitterErrorDefault),
71 fSDDDynamicRange(fgkSDDDynamicRangeDefault),
73 fSDDChargeLoss(fgkSDDChargeLossDefault),
78 fSSDZSThreshold(fgkSSDZSThresholdDefault),
79 fNsigmas(fgkNsigmasDefault),
80 fNcomps(fgkNcompsDefault),
85 // default constructor
86 SetSPDBiasVoltageAll(fgkSPDBiasVoltageDefault);
87 SetSPDThresholdsAll(fgkSPDThreshDefault,fgkSPDSigmaDefault);
90 SetDistanceOverVoltage();
91 SetSPDCouplingOption(fgkSPDCouplingOptDefault);
92 SetSPDSigmaDiffusionAsymmetry(fgkSPDEccDiffDefault);
94 SetSDDDiffCoeff(fgkSDDDiffCoeffDefault,fgkSDDDiffCoeff1Default);
95 SetSDDMaxAdc((Double_t)fgkSDDMaxAdcDefault);
96 SetSSDCouplings(fgkSSDCouplingPRDefault,fgkSSDCouplingPLDefault,fgkSSDCouplingNRDefault,fgkSSDCouplingNLDefault);
98 //______________________________________________________________________
99 AliITSSimuParam::AliITSSimuParam(const AliITSSimuParam &simpar):
101 fGeVcharge(simpar.fGeVcharge),
102 fDOverV(simpar.fDOverV),
103 //fSPDBiasVoltage(simpar.fSPDBiasVoltage),
104 //fSPDThresh(simpar.fSPDThresh),
105 //fSPDSigma(simpar.fSPDSigma),
106 fSPDCouplOpt(simpar.fSPDCouplOpt),
107 fSPDCouplCol(simpar.fSPDCouplCol),
108 fSPDCouplRow(simpar.fSPDCouplRow),
109 fSPDEccDiff(simpar.fSPDEccDiff),
110 fSPDAddNoisyFlag(simpar.fSPDAddNoisyFlag),
111 fSPDRemoveDeadFlag(simpar.fSPDRemoveDeadFlag),
112 fSDDElectronics(simpar.fSDDElectronics),
113 fSDDDiffCoeff(simpar.fSDDDiffCoeff),
114 fSDDDiffCoeff1(simpar.fSDDDiffCoeff1),
115 fSDDJitterError(simpar.fSDDJitterError),
116 fSDDDynamicRange(simpar.fSDDDynamicRange),
117 fSDDMaxAdc(simpar.fSDDMaxAdc),
118 fSDDChargeLoss(simpar.fSDDChargeLoss),
119 fSSDCouplingPR(simpar.fSSDCouplingPR),
120 fSSDCouplingPL(simpar.fSSDCouplingPL),
121 fSSDCouplingNR(simpar.fSSDCouplingNR),
122 fSSDCouplingNL(simpar.fSSDCouplingNL),
123 fSSDZSThreshold(simpar.fSSDZSThreshold),
124 fNsigmas(simpar.fNsigmas),
125 fNcomps(simpar.fNcomps),
130 for (Int_t i=0;i<240;i++) {
131 fSPDBiasVoltage[i]=simpar.fSPDBiasVoltage[i];
132 fSPDThresh[i]=simpar.fSPDThresh[i];
133 fSPDSigma[i]=simpar.fSPDSigma[i];
134 fSPDNoise[i]=simpar.fSPDNoise[i];
135 fSPDBaseline[i]=simpar.fSPDBaseline[i];
139 //______________________________________________________________________
140 AliITSSimuParam& AliITSSimuParam::operator=(const AliITSSimuParam& source){
141 // Assignment operator.
142 this->~AliITSSimuParam();
143 new(this) AliITSSimuParam(source);
149 //______________________________________________________________________
150 AliITSSimuParam::~AliITSSimuParam() {
152 if(fGaus) delete fGaus;
154 //________________________________________________________________________
155 void AliITSSimuParam::SetNLookUp(Int_t p1){
156 // Set number of sigmas over which cluster disintegration is performed
158 if (fGaus) delete fGaus;
159 fGaus = new TArrayF(fNcomps+1);
160 for(Int_t i=0; i<=fNcomps; i++) {
161 Float_t x = -fNsigmas + (2.*i*fNsigmas)/(fNcomps-1);
162 (*fGaus)[i] = exp(-((x*x)/2));
165 //________________________________________________________________________
166 void AliITSSimuParam::PrintParameters() const{
167 printf("GeVToCharge = %G\n",fGeVcharge);
168 printf("DistanveOverVoltage = %f \n",fDOverV);
170 printf("===== SPD parameters =====\n");
171 printf("Bias Voltage = %f \n",fSPDBiasVoltage[0]);
172 printf("Threshold and sigma = %f %f\n",fSPDThresh[0],fSPDSigma[0]);
173 printf("Coupling Option = %s\n",fSPDCouplOpt.Data());
174 printf("Coupling value (column) = %f\n",fSPDCouplCol);
175 printf("Coupling value (row) = %f\n",fSPDCouplRow);
176 printf("Eccentricity in diffusion = %f\n",fSPDEccDiff);
177 printf("Flag to add noisy = %d\n",fSPDAddNoisyFlag);
178 printf("Flag to remove dead = %d\n",fSPDRemoveDeadFlag);
180 printf("===== SDD parameters =====\n");
181 printf("Electronic chips = %d\n",fSDDElectronics);
182 printf("Diffusion Coefficients = %f %f\n",fSDDDiffCoeff,fSDDDiffCoeff1);
183 printf("Jitter Error = %f um\n",fSDDJitterError);
184 printf("Dynamic Range = %f\n",fSDDDynamicRange);
185 printf("Max. ADC = %f\n",fSDDMaxAdc);
186 printf("Charge Loss = %f\n",fSDDChargeLoss);
188 printf("===== SSD parameters =====\n");
189 printf("Coupling PR = %f\n",fSSDCouplingPR);
190 printf("Coupling PL = %f\n",fSSDCouplingPL);
191 printf("Coupling NR = %f\n",fSSDCouplingNR);
192 printf("Coupling NL = %f\n",fSSDCouplingNL);
193 printf("Zero Supp threshold = %d\n",fSSDZSThreshold);
195 //______________________________________________________________________
196 Double_t AliITSSimuParam::MobilityElectronSiEmp() const {
197 // Computes the electron mobility in cm^2/volt-sec. Taken from SILVACO
198 // International ATLAS II, 2D Device Simulation Framework, User Manual
199 // Chapter 5 Equation 5-6. An empirical function for low-field mobiliity
200 // in silicon at different tempeatures.
206 // The Mobility of electrons in Si at a give temprature and impurity
207 // concentration. [cm^2/Volt-sec]
208 const Double_t km0 = 55.24; // cm^2/Volt-sec
209 const Double_t km1 = 7.12E+08; // cm^2 (degree K)^2.3 / Volt-sec
210 const Double_t kN0 = 1.072E17; // #/cm^3
211 const Double_t kT0 = 300.; // degree K.
212 const Double_t keT0 = -2.3; // Power of Temp.
213 const Double_t keT1 = -3.8; // Power of Temp.
214 const Double_t keN = 0.73; // Power of Dopent Consentrations
216 Double_t tT = fT,nN = fN;
218 if(nN<=0.0){ // Simple case.
219 if(tT==300.) return 1350.0; // From Table 5-1 at consentration 1.0E14.
220 m = km1*TMath::Power(tT,keT0);
223 m = km1*TMath::Power(tT,keT0) - km0;
224 m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN);
228 //______________________________________________________________________
229 Double_t AliITSSimuParam::MobilityHoleSiEmp() const {
230 // Computes the Hole mobility in cm^2/volt-sec. Taken from SILVACO
231 // International ATLAS II, 2D Device Simulation Framework, User Manual
232 // Chapter 5 Equation 5-7 An empirical function for low-field mobiliity
233 // in silicon at different tempeatures.
239 // The Mobility of Hole in Si at a give temprature and impurity
240 // concentration. [cm^2/Volt-sec]
241 const Double_t km0a = 49.74; // cm^2/Volt-sec
242 const Double_t km0b = 49.70; // cm^2/Volt-sec
243 const Double_t km1 = 1.35E+08; // cm^2 (degree K)^2.3 / Volt-sec
244 const Double_t kN0 = 1.606E17; // #/cm^3
245 const Double_t kT0 = 300.; // degree K.
246 const Double_t keT0 = -2.2; // Power of Temp.
247 const Double_t keT1 = -3.7; // Power of Temp.
248 const Double_t keN = 0.70; // Power of Dopent Consentrations
250 Double_t tT = fT,nN = fN;
252 if(nN<=0.0){ // Simple case.
253 if(tT==300.) return 495.0; // From Table 5-1 at consentration 1.0E14.
254 m = km1*TMath::Power(tT,keT0) + km0a-km0b;
257 m = km1*TMath::Power(tT,keT0) - km0b;
258 m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN);
262 //______________________________________________________________________
263 Double_t AliITSSimuParam::DiffusionCoefficientElectron() const {
264 // Computes the Diffusion coefficient for electrons in cm^2/sec. Taken
265 // from SILVACO International ATLAS II, 2D Device Simulation Framework,
266 // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
267 // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
273 // The Diffusion Coefficient of electrons in Si at a give temprature
274 // and impurity concentration. [cm^2/sec]
275 // const Double_t kb = 1.3806503E-23; // Joules/degree K
276 // const Double_t qe = 1.60217646E-19; // Coulumbs.
277 const Double_t kbqe = 8.617342312E-5; // Volt/degree K
278 Double_t m = MobilityElectronSiEmp();
281 return m*kbqe*tT; // [cm^2/sec]
283 //______________________________________________________________________
284 Double_t AliITSSimuParam::DiffusionCoefficientHole() const {
285 // Computes the Diffusion coefficient for Holes in cm^2/sec. Taken
286 // from SILVACO International ATLAS II, 2D Device Simulation Framework,
287 // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
288 // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
294 // The Defusion Coefficient of Hole in Si at a give temprature and
295 // impurity concentration. [cm^2/sec]
296 // and impurity concentration. [cm^2/sec]
297 // const Double_t kb = 1.3806503E-23; // Joules/degree K
298 // const Double_t qe = 1.60217646E-19; // Coulumbs.
299 const Double_t kbqe = 8.617342312E-5; // Volt/degree K
300 Double_t m = MobilityHoleSiEmp();
303 return m*kbqe*tT; // [cm^2/sec]
305 //______________________________________________________________________
306 Double_t AliITSSimuParam::LorentzAngleHole(Double_t B) const {
307 // Computes the Lorentz angle for electrons in Si
308 // Input: magnetic Field in KGauss
309 // Output: Lorentz angle in radians (positive if Bz is positive)
310 // Main Reference: NIM A 497 (2003) 389–396.
311 // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al.
313 const Double_t krH=0.70; // Hall scattering factor for Hole
314 const Double_t kT0 = 300.; // reference Temperature (degree K).
315 const Double_t kmulow0 = 470.5; // cm^2/Volt-sec
316 const Double_t keT0 = -2.5; // Power of Temp.
317 const Double_t beta0 = 1.213; // beta coeff. at T0=300K
318 const Double_t keT1 = 0.17; // Power of Temp. for beta
319 const Double_t kvsat0 = 8.37E+06; // saturated velocity at T0=300K (cm/sec)
320 const Double_t keT2 = 0.52; // Power of Temp. for vsat
322 Double_t eE= 1./fDOverV;
323 Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0);
324 Double_t beta=beta0*TMath::Power(tT/kT0,keT1);
325 Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2);
326 Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta);
327 Double_t angle=TMath::ATan(krH*mu*B*1.E-05); // Conversion Factor
330 //______________________________________________________________________
331 Double_t AliITSSimuParam::LorentzAngleElectron(Double_t B) const {
332 // Computes the Lorentz angle for electrons in Si
333 // Input: magnetic Field in KGauss
334 // Output: Lorentz angle in radians (positive if Bz is positive)
335 // Main Reference: NIM A 497 (2003) 389–396.
336 // "An algorithm for calculating the Lorentz angle in silicon detectors", V. Bartsch et al.
338 const Double_t krH=1.15; // Hall scattering factor for Electron
339 const Double_t kT0 = 300.; // reference Temperature (degree K).
340 const Double_t kmulow0 = 1417.0; // cm^2/Volt-sec
341 const Double_t keT0 = -2.2; // Power of Temp.
342 const Double_t beta0 = 1.109; // beta coeff. at T0=300K
343 const Double_t keT1 = 0.66; // Power of Temp. for beta
344 const Double_t kvsat0 = 1.07E+07; // saturated velocity at T0=300K (cm/sec)
345 const Double_t keT2 = 0.87; // Power of Temp. for vsat
347 Double_t eE= 1./fDOverV;
348 Double_t muLow=kmulow0*TMath::Power(tT/kT0,keT0);
349 Double_t beta=beta0*TMath::Power(tT/kT0,keT1);
350 Double_t vsat=kvsat0*TMath::Power(tT/kT0,keT2);
351 Double_t mu=muLow/TMath::Power(1+TMath::Power(muLow*eE/vsat,beta),1/beta);
352 Double_t angle=TMath::ATan(krH*mu*B*1.E-05);
355 //______________________________________________________________________
356 Double_t AliITSSimuParam::SpeedElectron() const {
357 // Computes the average speed for electrons in Si under the low-field
358 // approximation. [cm/sec].
364 // The speed the holes are traveling at due to the low field applied.
366 Double_t m = MobilityElectronSiEmp();
368 return m/fDOverV; // [cm/sec]
370 //______________________________________________________________________
371 Double_t AliITSSimuParam::SpeedHole() const {
372 // Computes the average speed for Holes in Si under the low-field
373 // approximation.[cm/sec].
379 // The speed the holes are traveling at due to the low field applied.
381 Double_t m = MobilityHoleSiEmp();
383 return m/fDOverV; // [cm/sec]
385 //______________________________________________________________________
386 Double_t AliITSSimuParam::SigmaDiffusion3D(Double_t l) const {
387 // Returns the Gaussian sigma^2 == <x^2+y^2+z^2> [cm^2] due to the
388 // defusion of electrons or holes through a distance l [cm] caused
389 // by an applied voltage v [volt] through a distance d [cm] in any
390 // material at a temperature T [degree K]. The sigma diffusion when
391 // expressed in terms of the distance over which the diffusion
392 // occures, l=time/speed, is independent of the mobility and therefore
393 // the properties of the material. The charge distributions is given by
394 // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 6Dt where D=mkT/e
395 // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
396 // charge. and vel=m*v/d. consiquently sigma^2=6kTdl/ev.
398 // Double_t l Distance the charge has to travel.
402 // The Sigma due to the diffution of electrons. [cm]
403 const Double_t kcon = 5.17040258E-04; // == 6k/e [J/col or volts]
405 return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm]
407 //______________________________________________________________________
408 Double_t AliITSSimuParam::SigmaDiffusion2D(Double_t l) const {
409 // Returns the Gaussian sigma^2 == <x^2+z^2> [cm^2] due to the defusion
410 // of electrons or holes through a distance l [cm] caused by an applied
411 // voltage v [volt] through a distance d [cm] in any material at a
412 // temperature T [degree K]. The sigma diffusion when expressed in terms
413 // of the distance over which the diffusion occures, l=time/speed, is
414 // independent of the mobility and therefore the properties of the
415 // material. The charge distributions is given by
416 // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <x^2+z^2> = 4Dt where D=mkT/e
417 // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
418 // charge. and vel=m*v/d. consiquently sigma^2=4kTdl/ev.
420 // Double_t l Distance the charge has to travel.
424 // The Sigma due to the diffution of electrons. [cm]
425 const Double_t kcon = 3.446935053E-04; // == 4k/e [J/col or volts]
427 return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm]
429 //______________________________________________________________________
430 Double_t AliITSSimuParam::SigmaDiffusion1D(Double_t l) const {
431 // Returns the Gaussian sigma^2 == <x^2> [cm^2] due to the defusion
432 // of electrons or holes through a distance l [cm] caused by an applied
433 // voltage v [volt] through a distance d [cm] in any material at a
434 // temperature T [degree K]. The sigma diffusion when expressed in terms
435 // of the distance over which the diffusion occures, l=time/speed, is
436 // independent of the mobility and therefore the properties of the
437 // material. The charge distributions is given by
438 // n = exp(-r^2/4Dt)/(4piDt)^1.5. From this <r^2> = 2Dt where D=mkT/e
439 // (m==mobility, k==Boltzman's constant, T==temparature, e==electric
440 // charge. and vel=m*v/d. consiquently sigma^2=2kTdl/ev.
442 // Double_t l Distance the charge has to travel.
446 // The Sigma due to the diffution of electrons. [cm]
447 const Double_t kcon = 1.723467527E-04; // == 2k/e [J/col or volts]
449 return TMath::Sqrt(kcon*fT*fDOverV*l); // [cm]
451 //----------------------------------------------------------------------
452 Double_t AliITSSimuParam::DepletedRegionThicknessA(Double_t dopCons,
455 Double_t voltBuiltIn)const{
456 // Computes the thickness of the depleted region in Si due to the
457 // application of an external bias voltage. From the Particle Data
458 // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004)
459 // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
460 // July 15 2004, ISSN 0370-2693 page 263. First equation.
462 // Double_t dopCons "N" doping concentration
463 // Double_t voltage "V" external bias voltage
464 // Double_t elecCharge "e" electronic charge
465 // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for
466 // resistivities typically used in detectors)
470 // The thickness of the depleted region
472 return TMath::Sqrt(2.0*(voltage+voltBuiltIn)/(dopCons*elecCharge));
474 //----------------------------------------------------------------------
475 Double_t AliITSSimuParam::DepletedRegionThicknessB(Double_t resist,
478 Double_t voltBuiltIn,
479 Double_t dielConst)const{
480 // Computes the thickness of the depleted region in Si due to the
481 // application of an external bias voltage. From the Particle Data
482 // Book, 28.8 Silicon semiconductor detectors equation 28.19 (2004)
483 // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
484 // July 15 2004, ISSN 0370-2693 page 263. Second Equation.
486 // Double_t resist "rho" resistivity (typically 1-10 kOhm cm)
487 // Double_t voltage "V" external bias voltage
488 // Double_t mobility "mu" charge carrier mobility
489 // (electons 1350, holes 450 cm^2/V/s)
490 // Double_t voltBuiltIn=0.5 "V_bi" "built-in" Voltage (~0.5V for
491 // resistivities typically used in detectors)
492 // Double_t dielConst=1.E-12 "epsilon" dielectric constant = 11.9 *
493 // (permittivity of free space) or ~ 1 pF/cm
497 // The thickness of the depleted region
499 return TMath::Sqrt(2.8*resist*mobility*dielConst*(voltage+voltBuiltIn));
501 //----------------------------------------------------------------------
502 Double_t AliITSSimuParam::ReverseBiasCurrent(Double_t temp,
503 Double_t revBiasCurT1,
505 Double_t energy)const{
506 // Computes the temperature dependance of the reverse bias current
507 // of Si detectors. From the Particle Data
508 // Book, 28.8 Silicon semiconductor detectors equation 28.21 (2004)
509 // Physics Letters B "Review of Particle Physics" Volume 592, Issue 1-4
510 // July 15 2004, ISSN 0370-2693 page 263.
512 // Double_t temp The temperature at which the current is wanted
513 // Double_t revBiasCurT1 The reference bias current at temp T1
514 // Double_t tempT1 The temperature correstponding to revBiasCurT1
515 // Double_t energy=1.2 Some energy [eV]
519 // The reverse bias current at the tempeature temp.
520 const Double_t kBoltz = 8.617343E-5; //[eV/K]
522 return revBiasCurT1*(temp*temp/(tempT1*tempT1))*
523 TMath::Exp(-0.5*energy*(tempT1-temp)/(kBoltz*tempT1*temp));
525 //______________________________________________________________________
526 void AliITSSimuParam::SPDThresholds(const Int_t mod, Double_t& thresh, Double_t& sigma) const {
527 if(mod<0 || mod>239) {
532 thresh=fSPDThresh[mod];
533 sigma=fSPDSigma[mod];
536 //_______________________________________________________________________
537 void AliITSSimuParam::SPDNoise(const Int_t mod,Double_t &noise, Double_t &baseline) const {
538 if(mod<0 || mod>239) {
543 noise=fSPDNoise[mod];
544 baseline=fSPDBaseline[mod];