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18 //_________________________________________________________________________
19 // Implementation version v0 of PHOS Manager class
20 // Layout EMC + PPSD has name GPS2
21 // The main goal of this version of AliPHOS is to calculte the
22 // induced charged in the PIN diode, taking into account light
23 // tracking in the PbWO4 crystal, induced signal in the
24 // PIN due to MIPS particle and electronic noise.
25 // This is done in the StepManager
27 //*-- Author: Odd Harald Odland & Gines Martinez (SUBATECH)
30 // --- ROOT system ---
33 // --- Standard library ---
37 #include <strstream.h>
39 // --- AliRoot header files ---
41 #include "AliPHOSv3.h"
42 #include "AliPHOSHit.h"
43 #include "AliPHOSCPVDigit.h"
46 #include "AliPHOSGeometry.h"
50 //____________________________________________________________________________
51 AliPHOSv3::AliPHOSv3(void) : AliPHOSv1()
53 // default ctor: initialize daa members
55 fLightYieldMean = 0. ;
56 fIntrinsicPINEfficiency = 0. ;
57 fLightYieldAttenuation = 0. ;
58 fRecalibrationFactor = 0. ;
59 fElectronsPerGeV = 0. ;
64 //____________________________________________________________________________
65 AliPHOSv3::AliPHOSv3(const char *name, const char *title):
70 // The light yield is a poissonian distribution of the number of
71 // photons created in the PbWo4 crystal, calculated using following formula
72 // NumberOfPhotons = EnergyLost * LightYieldMean* APDEfficiency *
73 // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit);
74 // LightYieldMean is parameter calculated to be over 47000 photons per GeV
75 // APDEfficiency is 0.02655
76 // k_0 is 0.0045 from Valery Antonenko
77 // The number of electrons created in the APD is
78 // NumberOfElectrons = APDGain * LightYield
79 // The APD Gain is 300
81 fLightYieldMean = 47000;
82 fIntrinsicPINEfficiency = 0.02655 ; //APD= 0.1875/0.1271 * 0.018 (PIN)
83 fLightYieldAttenuation = 0.0045 ;
84 fRecalibrationFactor = 13.418/ fLightYieldMean ;
85 fElectronsPerGeV = 2.77e+8 ;
89 // //____________________________________________________________________________
90 // AliPHOSv3::AliPHOSv3(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title):
91 // AliPHOSv1(Reconstructioner,name,title)
95 // // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
96 // // following formula
97 // // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
98 // // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
99 // // RecalibrationFactor ;
100 // // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
101 // // PINEfficiency is 0.1875
102 // // k_0 is 0.0045 from Valery Antonenko
104 // fLightYieldMean = 700000.;
105 // fIntrinsicPINEfficiency = 0.1875 ;
106 // fLightYieldAttenuation = 0.0045 ;
107 // fRecalibrationFactor = 6.2 / fLightYieldMean ;
108 // fRecalibrationFactor = 5.67 /fLightYieldMean ;//25.04.2001 OHO
109 // fElectronsPerGeV = 2.77e+8 ;
111 //____________________________________________________________________________
113 void AliPHOSv3::StepManager(void)
115 // Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell
117 // if (gMC->IsTrackEntering())
118 // Info("StepManager", "Track enters the volume %d", gMC->CurrentVolName()) ;
119 // if (gMC->IsTrackExiting())
120 // Info("StepManager", "Track leaves the volume %d", gMC->CurrentVolName()) ;
122 Int_t relid[4] ; // (box, layer, row, column) indices
123 Int_t absid ; // absolute cell ID number
124 Float_t xyze[4]={0,0,0,0} ; // position wrt MRS and energy deposited
126 TLorentzVector pos ; // Lorentz vector of the track current position
128 Float_t fLightYield ; // Light Yield per GeV
130 Int_t tracknumber = gAlice->CurrentTrack() ;
131 Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() );
132 TString name = GetGeometry()->GetName() ;
138 if ( name == "GPS2" || name == "MIXT" ) { // ======> CPV is a GPS' PPSD
140 if( gMC->CurrentVolID(copy) == gMC->VolId("PPCE") ) // We are inside a gas cell
142 gMC->TrackPosition(pos) ;
146 xyze[3] = gMC->Edep() ;
148 if ( xyze[3] != 0) { // there is deposited energy
149 gMC->CurrentVolOffID(5, relid[0]) ; // get the PHOS Module number
150 if ( name == "MIXT" && strcmp(gMC->CurrentVolOffName(5),"PHO1") == 0 ){
151 relid[0] += GetGeometry()->GetNModules() - GetGeometry()->GetNPPSDModules();
153 gMC->CurrentVolOffID(3, relid[1]) ; // get the Micromegas Module number
154 // 1-> GetGeometry()->GetNumberOfModulesPhi() * GetGeometry()->GetNumberOfModulesZ() upper
155 // > GetGeometry()->GetNumberOfModulesPhi() * GetGeometry()->GetNumberOfModulesZ() lower
156 gMC->CurrentVolOffID(1, relid[2]) ; // get the row number of the cell
157 gMC->CurrentVolID(relid[3]) ; // get the column number
159 // get the absolute Id number
161 GetGeometry()->RelToAbsNumbering(relid, absid) ;
163 // add current hit to the hit list
164 AddHit(fIshunt, primary, tracknumber, absid, xyze);
167 } // there is deposited energy
168 } // We are inside the gas of the CPV
169 } // GPS2 configuration
171 if ( name == "IHEP" || name == "MIXT" ) { // ======> CPV is a IHEP's one
173 // Yuri Kharlov, 28 September 2000
175 if( gMC->CurrentVolID(copy) == gMC->VolId("PCPQ") &&
176 gMC->IsTrackEntering() &&
177 gMC->TrackCharge() != 0) {
179 gMC -> TrackPosition(pos);
180 Float_t xyzm[3], xyzd[3] ;
182 for (i=0; i<3; i++) xyzm[i] = pos[i];
183 gMC -> Gmtod (xyzm, xyzd, 1); // transform coordinate from master to daughter system
185 Float_t xyd[3]={0,0,0} ; //local posiiton of the entering
191 // Current momentum of the hit's track in the local ref. system
192 TLorentzVector pmom ; //momentum of the particle initiated hit
193 gMC -> TrackMomentum(pmom);
194 Float_t pm[3], pd[3];
195 for (i=0; i<3; i++) pm[i] = pmom[i];
196 gMC -> Gmtod (pm, pd, 2); // transform 3-momentum from master to daughter system
201 // Digitize the current CPV hit:
203 // 1. find pad response and
206 gMC->CurrentVolOffID(3,moduleNumber);
210 TClonesArray *cpvDigits = new TClonesArray("AliPHOSCPVDigit",0); // array of digits for current hit
211 CPVDigitize(pmom,xyd,moduleNumber,cpvDigits);
216 Int_t idigit,ndigits;
218 // 2. go through the current digit list and sum digits in pads
220 ndigits = cpvDigits->GetEntriesFast();
221 for (idigit=0; idigit<ndigits-1; idigit++) {
222 AliPHOSCPVDigit *cpvDigit1 = dynamic_cast<AliPHOSCPVDigit*>(cpvDigits->UncheckedAt(idigit));
223 Float_t x1 = cpvDigit1->GetXpad() ;
224 Float_t z1 = cpvDigit1->GetYpad() ;
225 for (Int_t jdigit=idigit+1; jdigit<ndigits; jdigit++) {
226 AliPHOSCPVDigit *cpvDigit2 = dynamic_cast<AliPHOSCPVDigit*>(cpvDigits->UncheckedAt(jdigit));
227 Float_t x2 = cpvDigit2->GetXpad() ;
228 Float_t z2 = cpvDigit2->GetYpad() ;
229 if (x1==x2 && z1==z2) {
230 Float_t qsum = cpvDigit1->GetQpad() + cpvDigit2->GetQpad() ;
231 cpvDigit2->SetQpad(qsum) ;
232 cpvDigits->RemoveAt(idigit) ;
236 cpvDigits->Compress() ;
238 // 3. add digits to temporary hit list fTmpHits
240 ndigits = cpvDigits->GetEntriesFast();
241 for (idigit=0; idigit<ndigits; idigit++) {
242 AliPHOSCPVDigit *cpvDigit = dynamic_cast<AliPHOSCPVDigit*>(cpvDigits->UncheckedAt(idigit));
243 relid[0] = moduleNumber + 1 ; // CPV (or PHOS) module number
244 relid[1] =-1 ; // means CPV
245 relid[2] = cpvDigit->GetXpad() ; // column number of a pad
246 relid[3] = cpvDigit->GetYpad() ; // row number of a pad
248 // get the absolute Id number
249 GetGeometry()->RelToAbsNumbering(relid, absid) ;
251 // add current digit to the temporary hit list
255 xyze[3] = cpvDigit->GetQpad() ; // amplitude in a pad
256 primary = -1; // No need in primary for CPV
257 AddHit(fIshunt, primary, tracknumber, absid, xyze);
259 if (cpvDigit->GetQpad() > 0.02) {
260 xmean += cpvDigit->GetQpad() * (cpvDigit->GetXpad() + 0.5);
261 zmean += cpvDigit->GetQpad() * (cpvDigit->GetYpad() + 0.5);
262 qsum += cpvDigit->GetQpad();
267 } // end of IHEP configuration
270 if(gMC->CurrentVolID(copy)==gMC->VolId("PXTL")){// We are inside a PBWO4 crystal
271 gMC->TrackPosition(pos) ;
278 lostenergy = gMC->Edep();
279 xyze[3] = gMC->Edep() ;
282 if ( (xyze[3] != 0) ){//Track is inside the crystal and deposits some energy
284 gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ;
286 if ( name == "MIXT" && strcmp(gMC->CurrentVolOffName(10),"PHO1") == 0 )
287 relid[0] += GetGeometry()->GetNModules() - GetGeometry()->GetNPPSDModules();
289 relid[1] = 0 ; // means PBW04
290 gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module
291 gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module
293 // get the absolute Id number
295 GetGeometry()->RelToAbsNumbering(relid, absid) ;
297 gMC->Gmtod(global, local, 1) ;
299 //Calculates the light yield, the number of photns produced in the
301 fLightYield = gRandom->Poisson(
302 fLightYieldMean * lostenergy *
303 fIntrinsicPINEfficiency *
304 exp(-fLightYieldAttenuation *
305 (local[1]+GetGeometry()->GetCrystalSize(1)/2.0 ))
307 //Calculates de energy deposited in the crystal
308 xyze[3] = (fRecalibrationFactor/100.) * fAPDGain * fLightYield ;
311 // Info("StepManager", "xyze[3]: %f", xyze[3]) ;
312 // Info("StepManager", "lostenergy: %f", lostenergy) ;
317 // add current hit to the hit list
320 if (xyze[3] != 0.) AddHit(fIshunt, primary,tracknumber, absid, xyze);
323 } // there is deposited energy
324 } // we are inside a PHOS Xtal
326 // if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN"))//We are inside the PIN diode
328 // Info("StepManager", "Inside PIN";
329 // gMC->TrackPosition(pos) ;
330 // global[0] = pos[0] ;
331 // global[1] = pos[1] ;
332 // global[2] = pos[2] ;
333 // xyze[0] = pos[0] ;
334 // xyze[1] = pos[1] ;
335 // xyze[2] = pos[2] ;
336 // lostenergy = gMC->Edep() ;
337 // xyze[3] = gMC->Edep() ;
339 // if ( xyze[3] != 0 ) {
340 // gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
341 // relid[1] = 0 ; // means PW04 and PIN
342 // gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
343 // gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module
345 // // get the absolute Id number
348 // GetGeometry()->RelToAbsNumbering(relid,absid) ;
349 // gMC->Gmtod(global, local, 1) ;
351 // // calculating number of electrons in the PIN diode asociated to this hit
353 // //nElectrons = lostenergy * fElectronsPerGeV ;
354 // // xyze[3] = nElectrons * fRecalibrationFactor ;
355 // apdgain = gRandom->Poisson(300.) ;
356 // // apdgain = 300.;
357 // //if(local[1]<-0.0045) xyze[3] = apdgain * nElectrons * fRecalibrationFactor/10000.;
359 // if(local[1]<-0.0045) xyze[3] = apdgain * lostenergy * fElectronsPerGeV* (fRecalibrationFactor/100.);
361 // //if((local[1]>-0.0045)&&(gMC->TrackPid()==-11)) xyze[3] = apdgain * nElectrons * fRecalibrationFactor/10000.;
363 // if((local[1]>-0.0045)&&(gMC->TrackPid()==-11)) xyze[3] = apdgain * lostenergy * fElectronsPerGeV * (fRecalibrationFactor/100.);
365 // //if(local[1]>-0.0045) xyze[3] = nElectrons * fRecalibrationFactor/10000.;
367 // if(local[1]>-0.0045) xyze[3] = lostenergy * fElectronsPerGeV * (fRecalibrationFactor/100.);
369 // // add current hit to the hit list
371 // AddHit(fIshunt, primary, tracknumber, absid, xyze);
373 // //printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]);
374 // printf("Lost energy in the PIN is %f \n",lostenergy) ;
375 // } // there is deposited energy
376 // } // we are inside a PHOS XtalPHOS PIN diode