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18 //_________________________________________________________________________
19 // Implementation version v0 of PHOS Manager class
20 // Layout EMC + PPSD has name GPS2
21 // The main goal of this version of AliPHOS is to calculte the
22 // induced charged in the PIN diode, taking into account light
23 // tracking in the PbWO4 crystal, induced signal in the
24 // PIN due to MIPS particle and electronic noise.
25 // This is done in the StepManager
27 //*-- Author: Odd Harald Odland & Gines Martinez (SUBATECH)
30 // --- ROOT system ---
33 // --- Standard library ---
37 #include <strstream.h>
39 // --- AliRoot header files ---
41 #include "AliPHOSv3.h"
42 #include "AliPHOSHit.h"
43 #include "AliPHOSCPVDigit.h"
47 #include "AliPHOSGeometry.h"
51 //____________________________________________________________________________
52 AliPHOSv3::AliPHOSv3(void) : AliPHOSv1()
54 // default ctor: initialize daa members
56 fLightYieldMean = 0. ;
57 fIntrinsicPINEfficiency = 0. ;
58 fLightYieldAttenuation = 0. ;
59 fRecalibrationFactor = 0. ;
60 fElectronsPerGeV = 0. ;
65 //____________________________________________________________________________
66 AliPHOSv3::AliPHOSv3(const char *name, const char *title):
71 // The light yield is a poissonian distribution of the number of
72 // photons created in the PbWo4 crystal, calculated using following formula
73 // NumberOfPhotons = EnergyLost * LightYieldMean* APDEfficiency *
74 // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit);
75 // LightYieldMean is parameter calculated to be over 47000 photons per GeV
76 // APDEfficiency is 0.02655
77 // k_0 is 0.0045 from Valery Antonenko
78 // The number of electrons created in the APD is
79 // NumberOfElectrons = APDGain * LightYield
80 // The APD Gain is 300
82 fLightYieldMean = 47000;
83 fIntrinsicPINEfficiency = 0.02655 ; //APD= 0.1875/0.1271 * 0.018 (PIN)
84 fLightYieldAttenuation = 0.0045 ;
85 fRecalibrationFactor = 13.418/ fLightYieldMean ;
86 fElectronsPerGeV = 2.77e+8 ;
90 // //____________________________________________________________________________
91 // AliPHOSv3::AliPHOSv3(AliPHOSReconstructioner * Reconstructioner, const char *name, const char *title):
92 // AliPHOSv1(Reconstructioner,name,title)
96 // // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
97 // // following formula
98 // // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
99 // // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
100 // // RecalibrationFactor ;
101 // // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV fromValery Antonenko
102 // // PINEfficiency is 0.1875
103 // // k_0 is 0.0045 from Valery Antonenko
105 // fLightYieldMean = 700000.;
106 // fIntrinsicPINEfficiency = 0.1875 ;
107 // fLightYieldAttenuation = 0.0045 ;
108 // fRecalibrationFactor = 6.2 / fLightYieldMean ;
109 // fRecalibrationFactor = 5.67 /fLightYieldMean ;//25.04.2001 OHO
110 // fElectronsPerGeV = 2.77e+8 ;
112 //____________________________________________________________________________
114 void AliPHOSv3::StepManager(void)
116 // Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell
118 // if (gMC->IsTrackEntering())
119 // cout << "Track enters the volume " << gMC->CurrentVolName() << endl;
120 // if (gMC->IsTrackExiting())
121 // cout << "Track leaves the volume " << gMC->CurrentVolName() << endl;
123 Int_t relid[4] ; // (box, layer, row, column) indices
124 Int_t absid ; // absolute cell ID number
125 Float_t xyze[4]={0,0,0,0} ; // position wrt MRS and energy deposited
127 TLorentzVector pos ; // Lorentz vector of the track current position
129 Float_t fLightYield ; // Light Yield per GeV
131 Int_t tracknumber = gAlice->CurrentTrack() ;
132 Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() );
133 TString name = GetGeometry()->GetName() ;
139 if ( name == "GPS2" || name == "MIXT" ) { // ======> CPV is a GPS' PPSD
141 if( gMC->CurrentVolID(copy) == gMC->VolId("PPCE") ) // We are inside a gas cell
143 gMC->TrackPosition(pos) ;
147 xyze[3] = gMC->Edep() ;
149 if ( xyze[3] != 0) { // there is deposited energy
150 gMC->CurrentVolOffID(5, relid[0]) ; // get the PHOS Module number
151 if ( name == "MIXT" && strcmp(gMC->CurrentVolOffName(5),"PHO1") == 0 ){
152 relid[0] += GetGeometry()->GetNModules() - GetGeometry()->GetNPPSDModules();
154 gMC->CurrentVolOffID(3, relid[1]) ; // get the Micromegas Module number
155 // 1-> GetGeometry()->GetNumberOfModulesPhi() * GetGeometry()->GetNumberOfModulesZ() upper
156 // > GetGeometry()->GetNumberOfModulesPhi() * GetGeometry()->GetNumberOfModulesZ() lower
157 gMC->CurrentVolOffID(1, relid[2]) ; // get the row number of the cell
158 gMC->CurrentVolID(relid[3]) ; // get the column number
160 // get the absolute Id number
162 GetGeometry()->RelToAbsNumbering(relid, absid) ;
164 // add current hit to the hit list
165 AddHit(fIshunt, primary, tracknumber, absid, xyze);
168 } // there is deposited energy
169 } // We are inside the gas of the CPV
170 } // GPS2 configuration
172 if ( name == "IHEP" || name == "MIXT" ) { // ======> CPV is a IHEP's one
174 // Yuri Kharlov, 28 September 2000
176 if( gMC->CurrentVolID(copy) == gMC->VolId("PCPQ") &&
177 gMC->IsTrackEntering() &&
178 gMC->TrackCharge() != 0) {
180 gMC -> TrackPosition(pos);
181 Float_t xyzm[3], xyzd[3] ;
183 for (i=0; i<3; i++) xyzm[i] = pos[i];
184 gMC -> Gmtod (xyzm, xyzd, 1); // transform coordinate from master to daughter system
186 Float_t xyd[3]={0,0,0} ; //local posiiton of the entering
192 // Current momentum of the hit's track in the local ref. system
193 TLorentzVector pmom ; //momentum of the particle initiated hit
194 gMC -> TrackMomentum(pmom);
195 Float_t pm[3], pd[3];
196 for (i=0; i<3; i++) pm[i] = pmom[i];
197 gMC -> Gmtod (pm, pd, 2); // transform 3-momentum from master to daughter system
202 // Digitize the current CPV hit:
204 // 1. find pad response and
207 gMC->CurrentVolOffID(3,moduleNumber);
211 TClonesArray *cpvDigits = new TClonesArray("AliPHOSCPVDigit",0); // array of digits for current hit
212 CPVDigitize(pmom,xyd,moduleNumber,cpvDigits);
217 Int_t idigit,ndigits;
219 // 2. go through the current digit list and sum digits in pads
221 ndigits = cpvDigits->GetEntriesFast();
222 for (idigit=0; idigit<ndigits-1; idigit++) {
223 AliPHOSCPVDigit *cpvDigit1 = dynamic_cast<AliPHOSCPVDigit*>(cpvDigits->UncheckedAt(idigit));
224 Float_t x1 = cpvDigit1->GetXpad() ;
225 Float_t z1 = cpvDigit1->GetYpad() ;
226 for (Int_t jdigit=idigit+1; jdigit<ndigits; jdigit++) {
227 AliPHOSCPVDigit *cpvDigit2 = dynamic_cast<AliPHOSCPVDigit*>(cpvDigits->UncheckedAt(jdigit));
228 Float_t x2 = cpvDigit2->GetXpad() ;
229 Float_t z2 = cpvDigit2->GetYpad() ;
230 if (x1==x2 && z1==z2) {
231 Float_t qsum = cpvDigit1->GetQpad() + cpvDigit2->GetQpad() ;
232 cpvDigit2->SetQpad(qsum) ;
233 cpvDigits->RemoveAt(idigit) ;
237 cpvDigits->Compress() ;
239 // 3. add digits to temporary hit list fTmpHits
241 ndigits = cpvDigits->GetEntriesFast();
242 for (idigit=0; idigit<ndigits; idigit++) {
243 AliPHOSCPVDigit *cpvDigit = dynamic_cast<AliPHOSCPVDigit*>(cpvDigits->UncheckedAt(idigit));
244 relid[0] = moduleNumber + 1 ; // CPV (or PHOS) module number
245 relid[1] =-1 ; // means CPV
246 relid[2] = cpvDigit->GetXpad() ; // column number of a pad
247 relid[3] = cpvDigit->GetYpad() ; // row number of a pad
249 // get the absolute Id number
250 GetGeometry()->RelToAbsNumbering(relid, absid) ;
252 // add current digit to the temporary hit list
256 xyze[3] = cpvDigit->GetQpad() ; // amplitude in a pad
257 primary = -1; // No need in primary for CPV
258 AddHit(fIshunt, primary, tracknumber, absid, xyze);
260 if (cpvDigit->GetQpad() > 0.02) {
261 xmean += cpvDigit->GetQpad() * (cpvDigit->GetXpad() + 0.5);
262 zmean += cpvDigit->GetQpad() * (cpvDigit->GetYpad() + 0.5);
263 qsum += cpvDigit->GetQpad();
268 } // end of IHEP configuration
271 if(gMC->CurrentVolID(copy)==gMC->VolId("PXTL")){// We are inside a PBWO4 crystal
272 gMC->TrackPosition(pos) ;
279 lostenergy = gMC->Edep();
280 xyze[3] = gMC->Edep() ;
283 if ( (xyze[3] != 0) ){//Track is inside the crystal and deposits some energy
285 gMC->CurrentVolOffID(10, relid[0]) ; // get the PHOS module number ;
287 if ( name == "MIXT" && strcmp(gMC->CurrentVolOffName(10),"PHO1") == 0 )
288 relid[0] += GetGeometry()->GetNModules() - GetGeometry()->GetNPPSDModules();
290 relid[1] = 0 ; // means PBW04
291 gMC->CurrentVolOffID(4, relid[2]) ; // get the row number inside the module
292 gMC->CurrentVolOffID(3, relid[3]) ; // get the cell number inside the module
294 // get the absolute Id number
296 GetGeometry()->RelToAbsNumbering(relid, absid) ;
298 gMC->Gmtod(global, local, 1) ;
300 //Calculates the light yield, the number of photns produced in the
302 fLightYield = gRandom->Poisson(
303 fLightYieldMean * lostenergy *
304 fIntrinsicPINEfficiency *
305 exp(-fLightYieldAttenuation *
306 (local[1]+GetGeometry()->GetCrystalSize(1)/2.0 ))
308 //Calculates de energy deposited in the crystal
309 xyze[3] = (fRecalibrationFactor/100.) * fAPDGain * fLightYield ;
312 // cout<<"xyze[3]: "<<xyze[3]<< endl;
313 //cout<<"lostenergy: "<<lostenergy<<endl;
318 // add current hit to the hit list
321 if (xyze[3] != 0.) AddHit(fIshunt, primary,tracknumber, absid, xyze);
324 } // there is deposited energy
325 } // we are inside a PHOS Xtal
327 // if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN"))//We are inside the PIN diode
329 // cout<<" Inside PIN "<<endl;
330 // gMC->TrackPosition(pos) ;
331 // global[0] = pos[0] ;
332 // global[1] = pos[1] ;
333 // global[2] = pos[2] ;
334 // xyze[0] = pos[0] ;
335 // xyze[1] = pos[1] ;
336 // xyze[2] = pos[2] ;
337 // lostenergy = gMC->Edep() ;
338 // xyze[3] = gMC->Edep() ;
340 // if ( xyze[3] != 0 ) {
341 // gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
342 // relid[1] = 0 ; // means PW04 and PIN
343 // gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
344 // gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module
346 // // get the absolute Id number
349 // GetGeometry()->RelToAbsNumbering(relid,absid) ;
350 // gMC->Gmtod(global, local, 1) ;
352 // // calculating number of electrons in the PIN diode asociated to this hit
354 // //nElectrons = lostenergy * fElectronsPerGeV ;
355 // // xyze[3] = nElectrons * fRecalibrationFactor ;
356 // apdgain = gRandom->Poisson(300.) ;
357 // // apdgain = 300.;
358 // //if(local[1]<-0.0045) xyze[3] = apdgain * nElectrons * fRecalibrationFactor/10000.;
360 // if(local[1]<-0.0045) xyze[3] = apdgain * lostenergy * fElectronsPerGeV* (fRecalibrationFactor/100.);
362 // //if((local[1]>-0.0045)&&(gMC->TrackPid()==-11)) xyze[3] = apdgain * nElectrons * fRecalibrationFactor/10000.;
364 // if((local[1]>-0.0045)&&(gMC->TrackPid()==-11)) xyze[3] = apdgain * lostenergy * fElectronsPerGeV * (fRecalibrationFactor/100.);
366 // //if(local[1]>-0.0045) xyze[3] = nElectrons * fRecalibrationFactor/10000.;
368 // if(local[1]>-0.0045) xyze[3] = lostenergy * fElectronsPerGeV * (fRecalibrationFactor/100.);
370 // // add current hit to the hit list
372 // AddHit(fIshunt, primary, tracknumber, absid, xyze);
374 // //printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]);
375 // printf("Lost energy in the PIN is %f \n",lostenergy) ;
376 // } // there is deposited energy
377 // } // we are inside a PHOS XtalPHOS PIN diode