- SetGeVToCharge();
- fResponse = 0;
-}
-//______________________________________________________________________
-AliITSCalibration::AliITSCalibration(Double_t thickness):
-TObject(),
-fDataType(),
-fdv(0.),
-fN(0.),
-fT(300.),
-fGeVcharge(0.),
-fResponse(){
- // Default Constructor
-
- fdv = thickness/80.0; // 80 volts.
- SetGeVToCharge();
- fResponse = 0;
-}
-
-//______________________________________________________________________
-Double_t AliITSCalibration::MobilityElectronSiEmp() const {
- // Computes the electron mobility in cm^2/volt-sec. Taken from SILVACO
- // International ATLAS II, 2D Device Simulation Framework, User Manual
- // Chapter 5 Equation 5-6. An empirical function for low-field mobiliity
- // in silicon at different tempeatures.
- // Inputs:
- // none.
- // Output:
- // none.
- // Return:
- // The Mobility of electrons in Si at a give temprature and impurity
- // concentration. [cm^2/Volt-sec]
- const Double_t km0 = 55.24; // cm^2/Volt-sec
- const Double_t km1 = 7.12E+08; // cm^2 (degree K)^2.3 / Volt-sec
- const Double_t kN0 = 1.072E17; // #/cm^3
- const Double_t kT0 = 300.; // degree K.
- const Double_t keT0 = -2.3; // Power of Temp.
- const Double_t keT1 = -3.8; // Power of Temp.
- const Double_t keN = 0.73; // Power of Dopent Consentrations
- Double_t m;
- Double_t tT = fT,nN = fN;
-
- if(nN<=0.0){ // Simple case.
- if(tT==300.) return 1350.0; // From Table 5-1 at consentration 1.0E14.
- m = km1*TMath::Power(tT,keT0);
- return m;
- } // if nN<=0.0
- m = km1*TMath::Power(tT,keT0) - km0;
- m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN);
- m += km0;
- return m;
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::MobilityHoleSiEmp() const {
- // Computes the Hole mobility in cm^2/volt-sec. Taken from SILVACO
- // International ATLAS II, 2D Device Simulation Framework, User Manual
- // Chapter 5 Equation 5-7 An empirical function for low-field mobiliity
- // in silicon at different tempeatures.
- // Inputs:
- // none.
- // Output:
- // none.
- // Return:
- // The Mobility of Hole in Si at a give temprature and impurity
- // concentration. [cm^2/Volt-sec]
- const Double_t km0a = 49.74; // cm^2/Volt-sec
- const Double_t km0b = 49.70; // cm^2/Volt-sec
- const Double_t km1 = 1.35E+08; // cm^2 (degree K)^2.3 / Volt-sec
- const Double_t kN0 = 1.606E17; // #/cm^3
- const Double_t kT0 = 300.; // degree K.
- const Double_t keT0 = -2.2; // Power of Temp.
- const Double_t keT1 = -3.7; // Power of Temp.
- const Double_t keN = 0.70; // Power of Dopent Consentrations
- Double_t m;
- Double_t tT = fT,nN = fN;
-
- if(nN<=0.0){ // Simple case.
- if(tT==300.) return 495.0; // From Table 5-1 at consentration 1.0E14.
- m = km1*TMath::Power(tT,keT0) + km0a-km0b;
- return m;
- } // if nN<=0.0
- m = km1*TMath::Power(tT,keT0) - km0b;
- m /= 1.0 + TMath::Power(tT/kT0,keT1)*TMath::Power(nN/kN0,keN);
- m += km0a;
- return m;
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::DiffusionCoefficientElectron() const {
- // Computes the Diffusion coefficient for electrons in cm^2/sec. Taken
- // from SILVACO International ATLAS II, 2D Device Simulation Framework,
- // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
- // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
- // Inputs:
- // none.
- // Output:
- // none.
- // Return:
- // The Diffusion Coefficient of electrons in Si at a give temprature
- // and impurity concentration. [cm^2/sec]
- // const Double_t kb = 1.3806503E-23; // Joules/degree K
- // const Double_t qe = 1.60217646E-19; // Coulumbs.
- const Double_t kbqe = 8.617342312E-5; // Volt/degree K
- Double_t m = MobilityElectronSiEmp();
- Double_t tT = fT;
-
- return m*kbqe*tT; // [cm^2/sec]
-}
-//______________________________________________________________________
-Double_t AliITSCalibration::DiffusionCoefficientHole() const {
- // Computes the Diffusion coefficient for Holes in cm^2/sec. Taken
- // from SILVACO International ATLAS II, 2D Device Simulation Framework,
- // User Manual Chapter 5 Equation 5-53. Einstein relations for diffusion
- // coefficient. Note: 1 cm^2/sec = 10 microns^2/nanosec.
- // Inputs:
- // none.
- // Output:
- // none.
- // Return:
- // The Defusion Coefficient of Hole in Si at a give temprature and
- // impurity concentration. [cm^2/sec]
- // and impurity concentration. [cm^2/sec]
- // const Double_t kb = 1.3806503E-23; // Joules/degree K
- // const Double_t qe = 1.60217646E-19; // Coulumbs.
- const Double_t kbqe = 8.617342312E-5; // Volt/degree K
- Double_t m = MobilityHoleSiEmp();
- Double_t tT = fT;
-
- return m*kbqe*tT; // [cm^2/sec]