- // Pulse height from scored quantity (eloss)
- virtual Double_t IntPH(Double_t) const {return 0.;}
- // Charge disintegration
- virtual Double_t IntXZ(AliITSsegmentation *) const {return 0.;}
- // Electron mobility in Si. [cm^2/(Volt Sec)]. T in degree K, N in #/cm^3
- virtual Double_t MobilityElectronSiEmp() const ;
- // Hole mobility in Si. [cm^2/(Volt Sec)] T in degree K, N in #/cm^3
- virtual Double_t MobilityHoleSiEmp() const ;
- // Einstein relation for Diffusion Coefficient of Electrons. [cm^2/sec]
- // T in degree K, N in #/cm^3
- virtual Double_t DiffusionCoefficientElectron() const ;
- // Einstein relation for Diffusion Coefficient of Holes. [cm^2/sec]
- // T in [degree K], N in [#/cm^3]
- virtual Double_t DiffusionCoefficientHole() const ;
- // Electron <speed> under an applied electric field E=Volts/cm. [cm/sec]
- // d distance-thickness in [cm], v in [volts], T in [degree K],
- // N in [#/cm^3]
- virtual Double_t SpeedElectron() const ;
- // Holes <speed> under an applied electric field E=Volts/cm. [cm/sec]
- // d distance-thickness in [cm], v in [volts], T in [degree K],
- // N in [#/cm^3]
- virtual Double_t SpeedHole() const ;
- // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
- // electrons or holes through a distance l [cm] caused by an applied
- // voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion3D(Double_t l) const;
- // Returns the Gaussian sigma == <x^2 +y^2+z^2> [cm^2] due to the
- // defusion of electrons or holes through a distance l [cm] caused by an
- // applied voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion2D(Double_t l) const;
- // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
- // electrons or holes through a distance l [cm] caused by an applied
- // voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion1D(Double_t l) const;
- // Compute the thickness of the depleted region in a Si detector, version A
- virtual Double_t DepletedRegionThicknessA(Double_t dopCons,
- Double_t voltage,
- Double_t elecCharge,
- Double_t voltBuiltIn=0.5)const;
- // Compute the thickness of the depleted region in a Si detector, version B
- virtual Double_t DepletedRegionThicknessB(Double_t resist,Double_t voltage,
- Double_t mobility,
- Double_t voltBuiltIn=0.5,
- Double_t dielConst=1.E-12)const;
- // Computes the temperature dependance of the reverse bias current
- virtual Double_t ReverseBiasCurrent(Double_t temp,Double_t revBiasCurT1,
- Double_t tempT1,Double_t energy=1.2)const;