class TF1;
class AliITSgeom;
-//----------------------------------------------
-//
-// ITS response virtual base class
-//
+////////////////////////////////////////////////////
+// //
+// ITS base response virtual base class //
+// //
+////////////////////////////////////////////////////
class AliITSresponse : public TObject {
public:
- // Default Constructor
- AliITSresponse();
- // Standard Constructor
- AliITSresponse(Double_t Thickness);
- // Destructor.
- virtual ~AliITSresponse() {}
- //
- // Configuration methods
- //
- // fGeVcharge is set by default 3.6e-9 GeV See for ex. PDG 2004.
- virtual void SetGeVToCharge(Double_t gc=3.6e-9){fGeVcharge = gc;}
- // Returns the value fGeVcharge
- virtual Double_t GetGeVToCharge() const {return fGeVcharge;}
- // Converts deposited energy to number of electrons liberated
- virtual Double_t GeVToCharge(Double_t gev) const {return gev/fGeVcharge;}
- // Diffusion coefficient
- virtual void SetDiffCoeff(Double_t, Double_t) = 0;
- // Get diffusion coefficients
- virtual void DiffCoeff(Double_t &,Double_t &) const = 0;
-
- // Temperature in [degree K]
- virtual void SetTemperature(Double_t t=300.0) {fT = t;}
- // Get temperature [degree K]
- virtual Double_t Temperature() const {return fT;}
- // Set the impurity concentrations in [#/cm^3]
- virtual void SetImpurity(Double_t n=0.0){fN = n;}
- // Returns the impurity consentration in [#/cm^3]
- virtual Double_t Impurity() const {return fN;}
- // Sets the applied ratio distance/voltage [cm/volt]
- virtual void SetDistanceOverVoltage(Double_t d,Double_t v){fdv = d/v;}
- // Sets the applied ration distance/voltage [cm/volt]. Default value
- // is 300E-4cm/80 volts = 0.000375 cm/volts
- virtual void SetDistanceOverVoltage(Double_t dv=0.000375){fdv = dv;}
- // Returns the ration distance/voltage
- virtual Double_t DistanceOverVoltage() const {return fdv;}
- // Get data type
- virtual const char *DataType() const {return fDataType.Data();}
- // Type of data - real or simulated
- virtual void SetDataType(const char *data="simulated") {fDataType=data;}
- // Set parameters options: "same" or read from "file" or "SetInvalid" or...
- virtual void SetParamOptions(const char*,const char*) = 0;
- // Set noise parameters
- virtual void SetNoiseParam(Double_t, Double_t) = 0;
- // Number of parameters to be set
- virtual void SetNDetParam(Int_t) = 0;
- // Set detector parameters: gain, coupling ...
- virtual void SetDetParam(Double_t *) = 0;
-
- // Parameters options
- virtual void ParamOptions(char *,char*) const = 0;
- virtual Int_t NDetParam() const = 0;
- virtual void GetDetParam(Double_t *) const = 0;
- virtual void GetNoiseParam(Double_t&, Double_t&) const = 0;
-
- // Zero-suppression option - could be 1D, 2D or non-ZeroSuppressed
- virtual void SetZeroSupp(const char*) = 0;
- // Get zero-suppression option
- virtual const char *ZeroSuppOption() const = 0;
- // Set thresholds
- virtual void SetThresholds(Double_t, Double_t) = 0;
- virtual void Thresholds(Double_t &, Double_t &) const = 0;
+ AliITSresponse();
+ virtual ~AliITSresponse() {;}
+
+ virtual void SetDiffCoeff(Float_t p1, Float_t p2) {
+ fDiffCoeff=p1; fDiffCoeff1=p2;}
+ virtual void DiffCoeff(Float_t &diff,Float_t &diff1) const {
+ diff=fDiffCoeff; diff1=fDiffCoeff1;}
- // Set filenames
- virtual void SetFilenames(const char *f1="",const char *f2="",
- const char *f3=""){
- // Set filenames - input, output, parameters ....
- fFileName1=f1; fFileName2=f2; fFileName3=f3;}
- // Filenames
- virtual void Filenames(char* input,char* baseline,char* param) {
- strcpy(input,fFileName1.Data()); strcpy(baseline,fFileName2.Data());
- strcpy(param,fFileName3.Data());}
- virtual Double_t DriftSpeed() const {return SpeedElectron();};
- // set output option
- virtual void SetOutputOption(Bool_t write=kFALSE) {fWrite = write;}
-
- virtual Bool_t OutputOption() const {return fWrite;}
- virtual Bool_t Do10to8() const {return kTRUE;}
- virtual void GiveCompressParam(Int_t *) const =0;
- //
- // Detector type response methods
- // Set number of sigmas over which cluster disintegration is performed
- virtual void SetNSigmaIntegration(Double_t) = 0;
- // Get number of sigmas over which cluster disintegration is performed
- virtual Double_t NSigmaIntegration() const = 0;
- // Set number of bins for the gaussian lookup table
- virtual void SetNLookUp(Int_t) = 0;
- // Get number of bins for the gaussian lookup table
- virtual Int_t GausNLookUp() const {return 0;}
- // Get scaling factor for bin i-th from the gaussian lookup table
- virtual Double_t GausLookUp(Int_t) const {return 0.;}
- // Set sigmas of the charge spread function
- virtual void SetSigmaSpread(Double_t, Double_t) = 0;
- // Get sigmas for the charge spread
- virtual void SigmaSpread(Double_t &,Double_t &) const = 0;
- // Pulse height from scored quantity (eloss)
- virtual Double_t IntPH(Double_t) const {return 0.;}
- // Charge disintegration
- virtual Double_t IntXZ(AliITSsegmentation *) const {return 0.;}
- // Electron mobility in Si. [cm^2/(Volt Sec)]. T in degree K, N in #/cm^3
- virtual Double_t MobilityElectronSiEmp() const ;
- // Hole mobility in Si. [cm^2/(Volt Sec)] T in degree K, N in #/cm^3
- virtual Double_t MobilityHoleSiEmp() const ;
- // Einstein relation for Diffusion Coefficient of Electrons. [cm^2/sec]
- // T in degree K, N in #/cm^3
- virtual Double_t DiffusionCoefficientElectron() const ;
- // Einstein relation for Diffusion Coefficient of Holes. [cm^2/sec]
- // T in [degree K], N in [#/cm^3]
- virtual Double_t DiffusionCoefficientHole() const ;
- // Electron <speed> under an applied electric field E=Volts/cm. [cm/sec]
- // d distance-thickness in [cm], v in [volts], T in [degree K],
- // N in [#/cm^3]
- virtual Double_t SpeedElectron() const ;
- // Holes <speed> under an applied electric field E=Volts/cm. [cm/sec]
- // d distance-thickness in [cm], v in [volts], T in [degree K],
- // N in [#/cm^3]
- virtual Double_t SpeedHole() const ;
- // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
- // electrons or holes through a distance l [cm] caused by an applied
- // voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion3D(Double_t l) const;
- // Returns the Gaussian sigma == <x^2 +y^2+z^2> [cm^2] due to the
- // defusion of electrons or holes through a distance l [cm] caused by an
- // applied voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion2D(Double_t l) const;
- // Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
- // electrons or holes through a distance l [cm] caused by an applied
- // voltage v [volt] through a distance d [cm] in any material at a
- // temperature T [degree K].
- virtual Double_t SigmaDiffusion1D(Double_t l) const;
- // Compute the thickness of the depleted region in a Si detector, version A
- virtual Double_t DepletedRegionThicknessA(Double_t dopCons,
- Double_t voltage,
- Double_t elecCharge,
- Double_t voltBuiltIn=0.5)const;
- // Compute the thickness of the depleted region in a Si detector, version B
- virtual Double_t DepletedRegionThicknessB(Double_t resist,Double_t voltage,
- Double_t mobility,
- Double_t voltBuiltIn=0.5,
- Double_t dielConst=1.E-12)const;
- // Computes the temperature dependance of the reverse bias current
- virtual Double_t ReverseBiasCurrent(Double_t temp,Double_t revBiasCurT1,
- Double_t tempT1,Double_t energy=1.2)const;
- // Prints out the content of this class in ASCII format.
- virtual void Print(ostream *os) const;
- // Reads in the content of this class in the format of Print
- virtual void Read(istream *is);
- virtual void Print(Option_t *option="") const {TObject::Print(option);}
- virtual Int_t Read(const char *name) {return TObject::Read(name);}
protected:
+
void NotImplemented(const char *method) const {if(gDebug>0)
Warning(method,"This method is not implemented for this sub-class");}
-
- TString fDataType; // data type - real or simulated
+
private:
- Double_t fdv; // The parameter d/v where d is the disance over which the
- // the potential v is applied d/v [cm/volts]
- Double_t fN; // the impurity consentration of the material in #/cm^3
- Double_t fT; // The temperature of the Si in Degree K.
- Double_t fGeVcharge; // Energy to ionize (free an electron) in GeV
- TString fFileName1; // input keys : run, module #
- TString fFileName2; // baseline & noise val or output code
- // signal or monitored bgr.
- TString fFileName3; // param values or output coded signal
- Bool_t fWrite; // Write option for the compression algorithms
+ Float_t fDiffCoeff; // Diffusion Coefficient (scaling the time)
+ Float_t fDiffCoeff1; // Diffusion Coefficient (constant term)
+
- ClassDef(AliITSresponse,3) // Detector type response virtual base class
+ ClassDef(AliITSresponse,5) // Detector type response virtual base class
};
-// Input and output function for standard C++ input/output.
-ostream& operator<<(ostream &os,AliITSresponse &source);
-istream& operator>>(istream &os,AliITSresponse &source);
+
#endif