//
// Configuration methods
//
-
- // Set Electronics
- virtual void SetElectronics(Int_t) = 0;
- // Get Electronics
- virtual Int_t Electronics() const = 0;
-
- // Set maximum Adc-count value
- virtual void SetMaxAdc(Float_t) = 0;
- // Get maximum Adc-count value
- virtual Float_t MaxAdc() const = 0;
-
- // Set maximum Adc-top value
- virtual void SetDynamicRange(Float_t) = 0;
- // Get maximum Adc-top value
- virtual Float_t DynamicRange() const = 0;
-
- // Set Charge Loss Linear Coefficient
- virtual void SetChargeLoss(Float_t) = 0;
- // Get Charge Loss Linear Coefficient
- virtual Float_t ChargeLoss() const = 0;
-
- // Set GeVcharge value
- virtual void SetGeVToCharge(Float_t gc=2.778E+8){fGeVcharge = gc;}
+ // fGeVcharge is set by default 3.6e-9 GeV See for ex. PDG 2004.
+ virtual void SetGeVToCharge(Double_t gc=3.6e-9){fGeVcharge = gc;}
// Returns the value fGeVcharge
- virtual Float_t GetGeVToCharge() const {return fGeVcharge;}
+ virtual Double_t GetGeVToCharge() const {return fGeVcharge;}
// Converts deposited energy to number of electrons liberated
- virtual Float_t GeVToCharge(Float_t gev) const {return gev*fGeVcharge;}
-
+ virtual Double_t GeVToCharge(Double_t gev) const {return gev/fGeVcharge;}
// Diffusion coefficient
- virtual void SetDiffCoeff(Float_t, Float_t) = 0;
+ virtual void SetDiffCoeff(Double_t, Double_t) = 0;
// Get diffusion coefficients
- virtual void DiffCoeff(Float_t &,Float_t &) const = 0;
+ virtual void DiffCoeff(Double_t &,Double_t &) const = 0;
// Temperature in [degree K]
- virtual void SetTemperature(Float_t t=300.0) {fT = t;}
+ virtual void SetTemperature(Double_t t=300.0) {fT = t;}
// Get temperature [degree K]
- virtual Float_t Temperature() const {return fT;}
- // Type of data - real or simulated
- virtual void SetDataType(const char *data="simulated") {fDataType=data;}
+ virtual Double_t Temperature() const {return fT;}
// Set the impurity concentrations in [#/cm^3]
virtual void SetImpurity(Double_t n=0.0){fN = n;}
// Returns the impurity consentration in [#/cm^3]
virtual void SetDistanceOverVoltage(Double_t dv=0.000375){fdv = dv;}
// Returns the ration distance/voltage
virtual Double_t DistanceOverVoltage() const {return fdv;}
+
// Get data type
virtual const char *DataType() const {return fDataType.Data();}
-
+ // Type of data - real or simulated
+ virtual void SetDataType(const char *data="simulated") {fDataType=data;}
// Set parameters options: "same" or read from "file" or "SetInvalid" or...
virtual void SetParamOptions(const char*,const char*) = 0;
// Set noise parameters
- virtual void SetNoiseParam(Float_t, Float_t) = 0;
+ virtual void SetNoiseParam(Double_t, Double_t) = 0;
// Number of parameters to be set
virtual void SetNDetParam(Int_t) = 0;
// Set detector parameters: gain, coupling ...
- virtual void SetDetParam(Float_t *) = 0;
+ virtual void SetDetParam(Double_t *) = 0;
// Parameters options
virtual void ParamOptions(char *,char*) const = 0;
virtual Int_t NDetParam() const = 0;
- virtual void GetDetParam(Float_t *) const = 0;
- virtual void GetNoiseParam(Float_t&, Float_t&) const = 0;
+ virtual void GetDetParam(Double_t *) const = 0;
+ virtual void GetNoiseParam(Double_t&, Double_t&) const = 0;
// Zero-suppression option - could be 1D, 2D or non-ZeroSuppressed
virtual void SetZeroSupp(const char*) = 0;
// Get zero-suppression option
virtual const char *ZeroSuppOption() const = 0;
// Set thresholds
- virtual void SetThresholds(Float_t, Float_t) = 0;
- virtual void Thresholds(Float_t &, Float_t &) const = 0;
+ virtual void SetThresholds(Double_t, Double_t) = 0;
+ virtual void Thresholds(Double_t &, Double_t &) const = 0;
// Set filenames
- virtual void SetFilenames(const char *f1="",const char *f2="",const char *f3=""){
+ virtual void SetFilenames(const char *f1="",const char *f2="",
+ const char *f3=""){
// Set filenames - input, output, parameters ....
fFileName1=f1; fFileName2=f2; fFileName3=f3;}
// Filenames
virtual void Filenames(char* input,char* baseline,char* param) {
- strcpy(input,fFileName1.Data()); strcpy(baseline,fFileName2.Data());
- strcpy(param,fFileName3.Data());}
+ strcpy(input,fFileName1.Data()); strcpy(baseline,fFileName2.Data());
+ strcpy(param,fFileName3.Data());}
- virtual void SetDriftSpeed(Float_t p1) = 0;
- virtual Float_t DriftSpeed() const = 0;
- virtual void SetOutputOption(Bool_t write=kFALSE) {// set output option
- fWrite = write;}
+ virtual Double_t DriftSpeed() const {return SpeedElectron();};
+ // set output option
+ virtual void SetOutputOption(Bool_t write=kFALSE) {fWrite = write;}
+
virtual Bool_t OutputOption() const {return fWrite;}
virtual Bool_t Do10to8() const {return kTRUE;}
virtual void GiveCompressParam(Int_t *) const =0;
//
// Detector type response methods
// Set number of sigmas over which cluster disintegration is performed
- virtual void SetNSigmaIntegration(Float_t) = 0;
+ virtual void SetNSigmaIntegration(Double_t) = 0;
// Get number of sigmas over which cluster disintegration is performed
- virtual Float_t NSigmaIntegration() const = 0;
+ virtual Double_t NSigmaIntegration() const = 0;
// Set number of bins for the gaussian lookup table
virtual void SetNLookUp(Int_t) = 0;
// Get number of bins for the gaussian lookup table
virtual Int_t GausNLookUp() const {return 0;}
// Get scaling factor for bin i-th from the gaussian lookup table
- virtual Float_t GausLookUp(Int_t) const {return 0.;}
+ virtual Double_t GausLookUp(Int_t) const {return 0.;}
// Set sigmas of the charge spread function
- virtual void SetSigmaSpread(Float_t, Float_t) = 0;
+ virtual void SetSigmaSpread(Double_t, Double_t) = 0;
// Get sigmas for the charge spread
- virtual void SigmaSpread(Float_t &,Float_t &) const = 0;
+ virtual void SigmaSpread(Double_t &,Double_t &) const = 0;
// Pulse height from scored quantity (eloss)
- virtual Float_t IntPH(Float_t) const {return 0.;}
+ virtual Double_t IntPH(Double_t) const {return 0.;}
// Charge disintegration
- virtual Float_t IntXZ(AliITSsegmentation *) const {return 0.;}
+ virtual Double_t IntXZ(AliITSsegmentation *) const {return 0.;}
// Electron mobility in Si. [cm^2/(Volt Sec)]. T in degree K, N in #/cm^3
virtual Double_t MobilityElectronSiEmp() const ;
// Hole mobility in Si. [cm^2/(Volt Sec)] T in degree K, N in #/cm^3
// electrons or holes through a distance l [cm] caused by an applied
// voltage v [volt] through a distance d [cm] in any material at a
// temperature T [degree K].
- virtual Double_t SigmaDiffusion3D(Double_t l) const ;
+ virtual Double_t SigmaDiffusion3D(Double_t l) const;
// Returns the Gaussian sigma == <x^2 +y^2+z^2> [cm^2] due to the
// defusion of electrons or holes through a distance l [cm] caused by an
// applied voltage v [volt] through a distance d [cm] in any material at a
// temperature T [degree K].
- virtual Double_t SigmaDiffusion2D(Double_t l) const ;
+ virtual Double_t SigmaDiffusion2D(Double_t l) const;
// Returns the Gaussian sigma == <x^2+z^2> [cm^2] due to the defusion of
// electrons or holes through a distance l [cm] caused by an applied
// voltage v [volt] through a distance d [cm] in any material at a
// temperature T [degree K].
- virtual Double_t SigmaDiffusion1D(Double_t l) const ;
+ virtual Double_t SigmaDiffusion1D(Double_t l) const;
+ // Compute the thickness of the depleted region in a Si detector, version A
+ virtual Double_t DepletedRegionThicknessA(Double_t dopCons,
+ Double_t voltage,
+ Double_t elecCharge,
+ Double_t voltBuiltIn=0.5)const;
+ // Compute the thickness of the depleted region in a Si detector, version B
+ virtual Double_t DepletedRegionThicknessB(Double_t resist,Double_t voltage,
+ Double_t mobility,
+ Double_t voltBuiltIn=0.5,
+ Double_t dielConst=1.E-12)const;
+ // Computes the temperature dependance of the reverse bias current
+ virtual Double_t ReverseBiasCurrent(Double_t temp,Double_t revBiasCurT1,
+ Double_t tempT1,Double_t energy=1.2)const;
// Prints out the content of this class in ASCII format.
virtual void Print(ostream *os) const;
// Reads in the content of this class in the format of Print
virtual void Read(istream *is);
+ virtual void Print(Option_t *option="") const {TObject::Print(option);}
+ virtual Int_t Read(const char *name) {return TObject::Read(name);}
protected:
void NotImplemented(const char *method) const {if(gDebug>0)
Warning(method,"This method is not implemented for this sub-class");}
// the potential v is applied d/v [cm/volts]
Double_t fN; // the impurity consentration of the material in #/cm^3
Double_t fT; // The temperature of the Si in Degree K.
- Double_t fGeVcharge; // Energy to ionize (free an electron).
+ Double_t fGeVcharge; // Energy to ionize (free an electron) in GeV
TString fFileName1; // input keys : run, module #
TString fFileName2; // baseline & noise val or output code
// signal or monitored bgr.
TString fFileName3; // param values or output coded signal
Bool_t fWrite; // Write option for the compression algorithms
- ClassDef(AliITSresponse,2) // Detector type response virtual base class
+ ClassDef(AliITSresponse,3) // Detector type response virtual base class
};
// Input and output function for standard C++ input/output.
ostream& operator<<(ostream &os,AliITSresponse &source);