fNZ = 64 ;
fXtlSize[0] = 2.2 ;
- fXtlSize[1] = 22.0 ;
+ fXtlSize[1] = 18.0 ;
fXtlSize[2] = 2.2 ;
// all these numbers coming next are subject to changes
fIPtoOuterCoverDistance = 447.0 ;
fIPtoCrystalSurface = 460.0 ;
- fPinDiodeSize[0] = 1.71 ; //Values given by Odd Harald feb 2000
- fPinDiodeSize[1] = 0.0280 ; // 0.0280 is the depth of active layer in the silicon
- fPinDiodeSize[2] = 1.61 ;
-
+ //fPinDiodeSize[0] = 1.71 ; //Values of ame PIN diode
+ //fPinDiodeSize[1] = 0.0280 ; // OHO 0.0280 is the depth of active layer
+ //fPinDiodeSize[2] = 1.61 ;
+
+ fPinDiodeSize[0] = 0.5000 ; // APD 5 mm side
+ //fPinDiodeSize[1] = 0.0200 ; // APD bulk thickness
+ fPinDiodeSize[1] = 0.0100 ; // APD bulk thickness
+ //According to Y. M. (cms) is it 50 micrometer I use 100 micrometers OHO
+ fPinDiodeSize[2] = 0.5000 ; // APD 5 mm side
+
fUpperCoolingPlateThickness = 0.06 ;
fSupportPlateThickness = 10.0 ;
fLowerThermoPlateThickness = 3.0 ;
fAirFilledBoxSize[0] = fTextolitBoxSize[0] - 2 * fTextolitBoxThickness[0] ;
fAirFilledBoxSize[1] = fTextolitBoxSize[1] - fSecondUpperPlateThickness ;
fAirFilledBoxSize[2] = fTextolitBoxSize[2] - 2 * fTextolitBoxThickness[2] ;
-
+ fRotMatrixArray = 0;
}
//____________________________________________________________________________