// --- Standard library ---
-#include <stdio.h>
#include <string.h>
#include <stdlib.h>
#include <strstream.h>
#include "AliPHOSCPVDigit.h"
#include "AliRun.h"
#include "AliConst.h"
-#include "AliMC.h"
#include "AliPHOSGeometry.h"
ClassImp(AliPHOSv3)
fIntrinsicPINEfficiency = 0. ;
fLightYieldAttenuation = 0. ;
fRecalibrationFactor = 0. ;
- fElectronsPerGeV = 0. ;
+ fElectronsPerGeV = 0. ;
+ fAPDGain = 0. ;
}
{
// ctor
- // Number of electrons created in the PIN due to light collected in the PbWo4 crystal is calculated using
- // following formula
- // NumberOfElectrons = EnergyLost * LightYield * PINEfficiency *
- // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit) *
- // RecalibrationFactor ;
- // LightYield is obtained as a Poissonian distribution with a mean at 700000 photons per GeV from Valery Antonenko
- // PINEfficiency is 0.1875
+ // The light yield is a poissonian distribution of the number of
+ // photons created in the PbWo4 crystal, calculated using following formula
+ // NumberOfPhotons = EnergyLost * LightYieldMean* APDEfficiency *
+ // exp (-LightYieldAttenuation * DistanceToPINdiodeFromTheHit);
+ // LightYieldMean is parameter calculated to be over 47000 photons per GeV
+ // APDEfficiency is 0.02655
// k_0 is 0.0045 from Valery Antonenko
-
-
- fLightYieldMean = 700000. ;
- fIntrinsicPINEfficiency = 0.1875 ;
- //fIntrinsicPINEfficiency = 0.02655 ; //APD= 0.1875/0.1271 * 0.018 (PIN)
- fLightYieldAttenuation = 0.0045 ;
- //fRecalibrationFactor = 6.2 / fLightYieldMean ;
- // fRecalibrationFactor = 5.67/ fLightYieldMean ; //25.04.2001 OHO
- //fRecalibrationFactor = 1.881/ fLightYieldMean ; //23.05.2001 OHO
- fRecalibrationFactor = 1.9/ fLightYieldMean ;//05.06.2001 OHO
- fElectronsPerGeV = 2.77e+8 ;
+ // The number of electrons created in the APD is
+ // NumberOfElectrons = APDGain * LightYield
+ // The APD Gain is 300
+
+ fLightYieldMean = 47000;
+ fIntrinsicPINEfficiency = 0.02655 ; //APD= 0.1875/0.1271 * 0.018 (PIN)
+ fLightYieldAttenuation = 0.0045 ;
+ fRecalibrationFactor = 13.418/ fLightYieldMean ;
+ fElectronsPerGeV = 2.77e+8 ;
+ fAPDGain= 300. ;
}
// //____________________________________________________________________________
// Accumulates hits as long as the track stays in a single crystal or PPSD gas Cell
// if (gMC->IsTrackEntering())
-// cout << "Track enters the volume " << gMC->CurrentVolName() << endl;
+// Info("StepManager", "Track enters the volume %d", gMC->CurrentVolName()) ;
// if (gMC->IsTrackExiting())
-// cout << "Track leaves the volume " << gMC->CurrentVolName() << endl;
+// Info("StepManager", "Track leaves the volume %d", gMC->CurrentVolName()) ;
Int_t relid[4] ; // (box, layer, row, column) indices
Int_t absid ; // absolute cell ID number
Float_t xyze[4]={0,0,0,0} ; // position wrt MRS and energy deposited
- //Double_t xyze[4]={0,0,0,0} ; // position wrt MRS and energy deposited
- TLorentzVector pos ; // Lorentz vector of the track current position
+
+ TLorentzVector pos ; // Lorentz vector of the track current position
Int_t copy ;
- Float_t lightyield ; // Light Yield per GeV
- Float_t apdgain ; // Poisson calculated gain around 300.
- //Float_t nElectrons ; // Number of electrons in the PIN diode
-
+ Float_t fLightYield ; // Light Yield per GeV
+
Int_t tracknumber = gAlice->CurrentTrack() ;
Int_t primary = gAlice->GetPrimary( gAlice->CurrentTrack() );
TString name = GetGeometry()->GetName() ;
Float_t lostenergy ;
- //Double_t lostenergy ;
Float_t global[3] ;
Float_t local[3] ;
ndigits = cpvDigits->GetEntriesFast();
for (idigit=0; idigit<ndigits-1; idigit++) {
- AliPHOSCPVDigit *cpvDigit1 = (AliPHOSCPVDigit*) cpvDigits->UncheckedAt(idigit);
+ AliPHOSCPVDigit *cpvDigit1 = dynamic_cast<AliPHOSCPVDigit*>(cpvDigits->UncheckedAt(idigit));
Float_t x1 = cpvDigit1->GetXpad() ;
Float_t z1 = cpvDigit1->GetYpad() ;
for (Int_t jdigit=idigit+1; jdigit<ndigits; jdigit++) {
- AliPHOSCPVDigit *cpvDigit2 = (AliPHOSCPVDigit*) cpvDigits->UncheckedAt(jdigit);
+ AliPHOSCPVDigit *cpvDigit2 = dynamic_cast<AliPHOSCPVDigit*>(cpvDigits->UncheckedAt(jdigit));
Float_t x2 = cpvDigit2->GetXpad() ;
Float_t z2 = cpvDigit2->GetYpad() ;
if (x1==x2 && z1==z2) {
ndigits = cpvDigits->GetEntriesFast();
for (idigit=0; idigit<ndigits; idigit++) {
- AliPHOSCPVDigit *cpvDigit = (AliPHOSCPVDigit*) cpvDigits->UncheckedAt(idigit);
+ AliPHOSCPVDigit *cpvDigit = dynamic_cast<AliPHOSCPVDigit*>(cpvDigits->UncheckedAt(idigit));
relid[0] = moduleNumber + 1 ; // CPV (or PHOS) module number
relid[1] =-1 ; // means CPV
relid[2] = cpvDigit->GetXpad() ; // column number of a pad
// get the absolute Id number
- GetGeometry()->RelToAbsNumbering(relid, absid) ;
+ GetGeometry()->RelToAbsNumbering(relid, absid) ;
- gMC->Gmtod(global, local, 1) ;
+ gMC->Gmtod(global, local, 1) ;
- lightyield = gRandom->Poisson(fLightYieldMean) ;
-
- apdgain = gRandom->Poisson(300.) ;
- //apdgain = 300.;
-
- //calculate the number of electrons produced in the PIN due to this energy
-
- //nElectrons = apdgain * lostenergy * lightyield * fIntrinsicPINEfficiency *exp(-fLightYieldAttenuation * (local[1]+GetGeometry()->GetCrystalSize(1)/2.0 ) ) ;
-
- xyze[3] = (fRecalibrationFactor/100.) * apdgain * lostenergy * lightyield * fIntrinsicPINEfficiency *exp(-fLightYieldAttenuation * (local[1]+GetGeometry()->GetCrystalSize(1)/2.0 ) ) ;
+ //Calculates the light yield, the number of photns produced in the
+ //crystal
+ fLightYield = gRandom->Poisson(
+ fLightYieldMean * lostenergy *
+ fIntrinsicPINEfficiency *
+ exp(-fLightYieldAttenuation *
+ (local[1]+GetGeometry()->GetCrystalSize(1)/2.0 ))
+ ) ;
+ //Calculates de energy deposited in the crystal
+ xyze[3] = (fRecalibrationFactor/100.) * fAPDGain * fLightYield ;
+
- //cout<<"xyze[3]: "<<xyze[3]<< endl;
- //cout<<"lostenergy: "<<lostenergy<<endl;
+ // Info("StepManager", "xyze[3]: %f", xyze[3]) ;
+ // Info("StepManager", "lostenergy: %f", lostenergy) ;
- //nElectrons = lostenergy * lightyield * fIntrinsicPINEfficiency *exp(-fLightYieldAttenuation * (local[1]+GetGeometry()->GetCrystalSize(1)/2.0 ) ) ;
- //xyze[3] = nElectrons * fRecalibrationFactor/10000. ;
+
// add current hit to the hit list
+
- AddHit(fIshunt, primary,tracknumber, absid, xyze);
-
+ if (xyze[3] != 0.) AddHit(fIshunt, primary,tracknumber, absid, xyze);
+
} // there is deposited energy
} // we are inside a PHOS Xtal
- if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN"))//We are inside the PIN diode
- {
- gMC->TrackPosition(pos) ;
- global[0] = pos[0] ;
- global[1] = pos[1] ;
- global[2] = pos[2] ;
- xyze[0] = pos[0] ;
- xyze[1] = pos[1] ;
- xyze[2] = pos[2] ;
- lostenergy = gMC->Edep() ;
- xyze[3] = gMC->Edep() ;
+// if(gMC->CurrentVolID(copy) == gMC->VolId("PPIN"))//We are inside the PIN diode
+// {
+// Info("StepManager", "Inside PIN";
+// gMC->TrackPosition(pos) ;
+// global[0] = pos[0] ;
+// global[1] = pos[1] ;
+// global[2] = pos[2] ;
+// xyze[0] = pos[0] ;
+// xyze[1] = pos[1] ;
+// xyze[2] = pos[2] ;
+// lostenergy = gMC->Edep() ;
+// xyze[3] = gMC->Edep() ;
- if ( xyze[3] != 0 ) {
- gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
- relid[1] = 0 ; // means PW04 and PIN
- gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
- gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module
+// if ( xyze[3] != 0 ) {
+// gMC->CurrentVolOffID(11, relid[0]) ; // get the PHOS module number ;
+// relid[1] = 0 ; // means PW04 and PIN
+// gMC->CurrentVolOffID(5, relid[2]) ; // get the row number inside the module
+// gMC->CurrentVolOffID(4, relid[3]) ; // get the cell number inside the module
- // get the absolute Id number
+// // get the absolute Id number
- Int_t absid ;
- GetGeometry()->RelToAbsNumbering(relid,absid) ;
- gMC->Gmtod(global, local, 1) ;
+// Int_t absid ;
+// GetGeometry()->RelToAbsNumbering(relid,absid) ;
+// gMC->Gmtod(global, local, 1) ;
-// calculating number of electrons in the PIN diode asociated to this hit
+// // calculating number of electrons in the PIN diode asociated to this hit
- //nElectrons = lostenergy * fElectronsPerGeV ;
- // xyze[3] = nElectrons * fRecalibrationFactor ;
- apdgain = gRandom->Poisson(300.) ;
- // apdgain = 300.;
- //if(local[1]<-0.0045) xyze[3] = apdgain * nElectrons * fRecalibrationFactor/10000.;
+// //nElectrons = lostenergy * fElectronsPerGeV ;
+// // xyze[3] = nElectrons * fRecalibrationFactor ;
+// apdgain = gRandom->Poisson(300.) ;
+// // apdgain = 300.;
+// //if(local[1]<-0.0045) xyze[3] = apdgain * nElectrons * fRecalibrationFactor/10000.;
- if(local[1]<-0.0045) xyze[3] = apdgain * lostenergy * fElectronsPerGeV* (fRecalibrationFactor/100.);
+// if(local[1]<-0.0045) xyze[3] = apdgain * lostenergy * fElectronsPerGeV* (fRecalibrationFactor/100.);
- //if((local[1]>-0.0045)&&(gMC->TrackPid()==-11)) xyze[3] = apdgain * nElectrons * fRecalibrationFactor/10000.;
+// //if((local[1]>-0.0045)&&(gMC->TrackPid()==-11)) xyze[3] = apdgain * nElectrons * fRecalibrationFactor/10000.;
- if((local[1]>-0.0045)&&(gMC->TrackPid()==-11)) xyze[3] = apdgain * lostenergy * fElectronsPerGeV * (fRecalibrationFactor/100.);
+// if((local[1]>-0.0045)&&(gMC->TrackPid()==-11)) xyze[3] = apdgain * lostenergy * fElectronsPerGeV * (fRecalibrationFactor/100.);
- //if(local[1]>-0.0045) xyze[3] = nElectrons * fRecalibrationFactor/10000.;
+// //if(local[1]>-0.0045) xyze[3] = nElectrons * fRecalibrationFactor/10000.;
- if(local[1]>-0.0045) xyze[3] = lostenergy * fElectronsPerGeV * (fRecalibrationFactor/100.);
+// if(local[1]>-0.0045) xyze[3] = lostenergy * fElectronsPerGeV * (fRecalibrationFactor/100.);
- // add current hit to the hit list
+// // add current hit to the hit list
- AddHit(fIshunt, primary, tracknumber, absid, xyze);
+// AddHit(fIshunt, primary, tracknumber, absid, xyze);
- //printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]);
- //printf("Lost energy in the PIN is %f \n",lostenergy) ;
- } // there is deposited energy
- } // we are inside a PHOS XtalPHOS PIN diode
+// //printf("PIN volume is %d, %d, %d, %d \n",relid[0],relid[1],relid[2],relid[3]);
+// printf("Lost energy in the PIN is %f \n",lostenergy) ;
+// } // there is deposited energy
+// } // we are inside a PHOS XtalPHOS PIN diode
}
git://git.uio.no / u / mrichter / AliRoot.git / blobdiff