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8ad94423 1/**************************************************************************
2 * Copyright(c) 1998-1999, ALICE Experiment at CERN, All rights reserved. *
3 * *
4 * Author: The ALICE Off-line Project. *
5 * Contributors are mentioned in the code where appropriate. *
6 * *
7 * Permission to use, copy, modify and distribute this software and its *
8 * documentation strictly for non-commercial purposes is hereby granted *
9 * without fee, provided that the above copyright notice appears in all *
10 * copies and that both the copyright notice and this permission notice *
11 * appear in the supporting documentation. The authors make no claims *
12 * about the suitability of this software for any purpose. It is *
13 * provided "as is" without express or implied warranty. *
14 **************************************************************************/
15
16/* $Id$ */
17
18//_________________________________________________________________________
19// Geometry class for PHOS : EMCA (Electromagnetic Calorimeter)
20//
21//*-- Author : Yves Schutz (SUBATECH)
22// Modified : Yuri Kharlov (IHEP, Protvino) 13 September 2000
23//
24// --- AliRoot header files ---
25
26#include "AliEMCAGeometry.h"
27
28ClassImp(AliEMCAGeometry) ;
29
30//____________________________________________________________________________
31AliEMCAGeometry::AliEMCAGeometry()
32{
33
34 // Initializes the EMC parameters
35
36 fNPhi = 64 ;
37 fNZ = 64 ;
38
39 fXtlSize[0] = 2.2 ;
40 fXtlSize[1] = 18.0 ;
41 fXtlSize[2] = 2.2 ;
42
43 // all these numbers coming next are subject to changes
44
45 fOuterBoxThickness[0] = 2.8 ;
46 fOuterBoxThickness[1] = 5.0 ;
47 fOuterBoxThickness[2] = 5.0 ;
48
49 fUpperPlateThickness = 4.0 ;
50
51 fSecondUpperPlateThickness = 5.0 ;
52
53 fCrystalSupportHeight = 6.95 ;
54 fCrystalWrapThickness = 0.01 ;
55 fCrystalHolderThickness = 0.005 ;
56 fModuleBoxThickness = 2.0 ;
57 fIPtoOuterCoverDistance = 447.0 ;
58 fIPtoCrystalSurface = 460.0 ;
59
60 fPinDiodeSize[0] = 1.71 ; //Values given by Odd Harald feb 2000
61 fPinDiodeSize[1] = 0.0280 ; // 0.0280 is the depth of active layer in the silicon
62 fPinDiodeSize[2] = 1.61 ;
63
64 fUpperCoolingPlateThickness = 0.06 ;
65 fSupportPlateThickness = 10.0 ;
66 fLowerThermoPlateThickness = 3.0 ;
67 fLowerTextolitPlateThickness = 1.0 ;
68 fGapBetweenCrystals = 0.03 ;
69
70 fTextolitBoxThickness[0] = 1.5 ;
71 fTextolitBoxThickness[1] = 0.0 ;
72 fTextolitBoxThickness[2] = 3.0 ;
73
74 fAirThickness[0] = 1.56 ;
75 fAirThickness[1] = 20.5175 ;
76 fAirThickness[2] = 2.48 ;
77
78 Float_t xtalModulePhiSize = fNPhi * ( fXtlSize[0] + 2 * fGapBetweenCrystals ) ;
79 Float_t xtalModuleZSize = fNZ * ( fXtlSize[2] + 2 * fGapBetweenCrystals ) ;
80
81 // The next dimensions are calculated from the above parameters
82
83 fOuterBoxSize[0] = xtalModulePhiSize + 2 * ( fAirThickness[0] + fModuleBoxThickness
84 + fTextolitBoxThickness[0] + fOuterBoxThickness[0] ) ;
85 fOuterBoxSize[1] = ( fXtlSize[1] + fCrystalSupportHeight + fCrystalWrapThickness + fCrystalHolderThickness )
86 + 2 * (fAirThickness[1] + fModuleBoxThickness + fTextolitBoxThickness[1] + fOuterBoxThickness[1] ) ;
87 fOuterBoxSize[2] = xtalModuleZSize + 2 * ( fAirThickness[2] + fModuleBoxThickness
88 + fTextolitBoxThickness[2] + fOuterBoxThickness[2] ) ;
89
90 fTextolitBoxSize[0] = fOuterBoxSize[0] - 2 * fOuterBoxThickness[0] ;
91 fTextolitBoxSize[1] = fOuterBoxSize[1] - fOuterBoxThickness[1] - fUpperPlateThickness ;
92 fTextolitBoxSize[2] = fOuterBoxSize[2] - 2 * fOuterBoxThickness[2] ;
93
94 fAirFilledBoxSize[0] = fTextolitBoxSize[0] - 2 * fTextolitBoxThickness[0] ;
95 fAirFilledBoxSize[1] = fTextolitBoxSize[1] - fSecondUpperPlateThickness ;
96 fAirFilledBoxSize[2] = fTextolitBoxSize[2] - 2 * fTextolitBoxThickness[2] ;
97
98}
99//____________________________________________________________________________