/* History of cvs commits:
*
* $Log$
+ * Revision 1.111 2007/07/24 09:41:19 morsch
+ * AliStack included for kKeepBit.
+ *
+ * Revision 1.110 2007/03/10 08:58:52 kharlov
+ * Protection for noCPV geometry
+ *
* Revision 1.109 2007/03/01 11:37:37 kharlov
* Strip units changed from 8x1 to 8x2 (T.Pocheptsov)
*
#include "AliPHOSv1.h"
#include "AliRun.h"
#include "AliMC.h"
+#include "AliStack.h"
ClassImp(AliPHOSv1)
gMC->TrackCharge() != 0) {
gMC -> TrackPosition(pos);
-
+
Float_t xyzm[3], xyzd[3] ;
Int_t i;
for (i=0; i<3; i++) xyzm[i] = pos[i];
- gMC -> Gmtod (xyzm, xyzd, 1); // transform coordinate from master to daughter system
-
+ gMC -> Gmtod (xyzm, xyzd, 1); // transform coordinate from master to daughter system
+
+
Float_t xyd[3]={0,0,0} ; //local position of the entering
xyd[0] = xyzd[0];
xyd[1] =-xyzd[2];
xyzte[1] = pos[1] ;
xyzte[2] = pos[2] ;
- Float_t global[3], local[3] ;
- global[0] = pos[0] ;
- global[1] = pos[1] ;
- global[2] = pos[2] ;
Float_t lostenergy = gMC->Edep();
//Put in the TreeK particle entering PHOS and all its parents
gMC->CurrentVolOffID(3, strip);
Int_t cell ;
gMC->CurrentVolOffID(2, cell);
-
+
//Old formula for row is wrong. For example, I have strip 56 (28 for 2 x 8), row must be 1.
//But row == 1 + 56 - 56 % 56 == 57 (row == 1 + 28 - 28 % 28 == 29)
//Int_t row = 1 + GetGeometry()->GetEMCAGeometry()->GetNStripZ() - strip % (GetGeometry()->GetEMCAGeometry()->GetNStripZ()) ;
absid = (moduleNumber-1)*GetGeometry()->GetNCristalsInModule() +
row * 2 + (col*GetGeometry()->GetEMCAGeometry()->GetNCellsXInStrip() + (cell - 1) / 2)*GetGeometry()->GetNZ() - (cell & 1 ? 1 : 0);
- gMC->Gmtod(global, local, 1) ;
//Calculates the light yield, the number of photons produced in the
//crystal
- Float_t lightYield = gRandom->Poisson(fLightFactor * lostenergy *
- exp(-fLightYieldAttenuation *
- (local[1]+GetGeometry()->GetCrystalSize(1)/2.0 ))
- ) ;
+ //There is no dependence of reponce on distance from energy deposition to APD
+ Float_t lightYield = gRandom->Poisson(fLightFactor * lostenergy) ;
//Calculates de energy deposited in the crystal
- xyzte[4] = fAPDFactor * lightYield ;
+ xyzte[4] = fAPDFactor * lightYield ;
Int_t primary ;
if(fIshunt == 2){